AO4427 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4427 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4427
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4427 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard Product AO4427
is Pb-free (meets ROHS & Sony 259 specifications).
AO4427L is a Green Product ordering option.
VDS (V) = -30V
ID = -12.5 A (VGS = -20V)
R
DS(ON) < 12mΩ (VGS = -20V)
DS(ON) < 14mΩ (VGS = -10V)
R
ESD Rating: 2KV HBM
AO4427 and AO4427L are electrically identical
SOIC-8
Top View
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±25
-12.5
-10.5
-60
V
A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
3
PD
W
Power Dissipation A
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
54
75
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
AO4427
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-12.5A
±1
VGS(th)
ID(ON)
-1.7
-60
-2.5
-3
V
A
9.4
12.2
11.5
32
12
15
14
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=-10V, ID=-10A
V
V
GS=-4.5V, ID=-5A
DS=-5V, ID=-12.5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
24
IS=-1A,VGS=0V
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2330 2900
480
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
320
6.8
10
52
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
41
10
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V,
ID=-12.5A
12
12.8
10.3
49.5
29
VGS=-10V, VDS=-15V, RL=1.2Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-12.5A, dI/dt=100A/µs
IF=-12.5A, dI/dt=100A/µs
28
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
20
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
-6V
VDS=-5V
-10V
-5V
20
10
-4.5V
125°C
VGS=-4V
25°C
4.5
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
11
10
9
1.6
1.4
1.2
1
VGS=-10V
ID=-10A
VGS=-10V
VGS=-20V
ID=-12.5A
VGS=-20V
8
0
0.8
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
40
1.0E+01
1.0E+00
1.0E-01
ID=-12.5A
125°C
30
1.0E-02
G
125°C
1.0E-03
1.0E-04
1.0E-05
1.0E-06
20
25°C
10
0
25°C
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
VDS=-15V
ID=-12.5A
Ciss
6
Coss
4
Crss
2
0
0
0
5
10
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
0
5
10
15
-VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
RDS(ON)
10µs
100µs
1ms
limited
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
G
PD
0.1
Ton
T
Single Pulse
0.001 0.01
0.01
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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