AO4425_10 [AOS]
38V P-Channel MOSFET; 38V P沟道MOSFET
| 型号： | AO4425_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 38V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4425
38V P-Channel MOSFET
General Description
Product Summary
The AO4425 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
VDS (V) = -38V
ID = -14A (VGS = -20V)
RDS(ON) < 10mΩ (VGS = -20V)
R
DS(ON) < 11mΩ (VGS = -10V)
ESD Rating: 4000V HBM
100% UIS Tested
100% Rg Tested
SOIC-8
D
S
Top View
Bottom View
D
D
D
D
G
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-38
V
Gate-Source Voltage
VGS
±25
-14
V
A
TA=25°C
TA=70°C
Continuous Drain
Current A
ID
-11
Pulsed Drain Current B
IDM
-50
TA=25°C
TA=70°C
3.1
PD
W
°C
Power Dissipation A
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
26
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
50
75
Maximum Junction-to-Lead C
RθJL
14
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4425
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-38
V
V
DS=-30V, VGS=0V
-100
-500
±1
IDSS
Zero Gate Voltage Drain Current
nA
TJ=55°C
VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
µA
µA
V
IGSS
Gate-Body leakage current
±10
-3.5
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-2
-2.5
V
GS=-10V, VDS=-5V
-50
A
VGS=-20V, ID=-14A
7.7
11
10
13.5
11
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-10V, ID=-14A
VDS=-5V, ID=-14A
IS=-1A,VGS=0V
8.8
43
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.71
1
V
Maximum Body-Diode Continuous Current
4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3800
560
350
7.5
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
63
14.1
16.1
12.4
9.2
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-20V, ID=-14A
V
GS=-10V, VDS=-20V, RL=1.35Ω,
RGEN=3Ω
tD(off)
tf
97.5
45.5
35
trr
IF=-14A, dI/dt=100A/µs
IF=-14A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
33
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
VDS=-5V
-20V
-10V
-5V
-4.5V
-4V
125°C
-3.5V
25°C
VGS=-3V
4
0
0
0
1
2
3
5
2
2.5
3
3.5
-VGS(Volts)
4
4.5
5
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
9
1.6
1.4
1.2
1
VGS=-10V
ID = -14A
VGS=-10V
VGS=-20V
8
I
D = -14A
VGS=-20V
7
0.8
6
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
20
ID=-14A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
15
10
5
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
4
8
12
16
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
4000
3000
2000
1000
0
10
8
VDS=-15V
ID=-14A
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
-Qg (nC)
40
50
60
70
0
10
20
30
40
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
40
30
20
10
0
10µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10.0
1.0
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明