AOB412 [AOS]
Transistor;
| 型号： | AOB412 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT412/AOB412L
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
TheꢀAOT412ꢀ&ꢀAOB412LꢀareꢀfabricatedꢀwithꢀSDMOSTM
trenchꢀtechnologyꢀthatꢀcombinesꢀexcellentꢀRDS(ON)ꢀwith
lowꢀgateꢀchargeꢀ&ꢀlowꢀQrr.Theꢀresultꢀisꢀoutstanding
efficiencyꢀwithꢀcontrolledꢀswitchingꢀbehavior.ꢀThis
universalꢀtechnologyꢀisꢀwellꢀsuitedꢀforꢀPWM,ꢀload
switchingꢀandꢀgeneralꢀpurposeꢀapplications.
ꢀꢀꢀVDS
100V
ꢀꢀꢀIDꢀꢀ(atꢀVGS=10V)
ꢀꢀꢀRDS(ON)ꢀ(atꢀVGS=10V)
ꢀꢀꢀRDS(ON)ꢀ(atꢀVGSꢀ=ꢀ7V)
60A
<ꢀ15.8mΩ
<ꢀ19.4mΩ
100%ꢀUISꢀTested
100%ꢀꢀRgꢀTested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
G
D
D
S
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
100
Units
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
V
V
VGS
±25
TC=25°C
60
ContinuousꢀDrain
Current
ID
TC=100°C
44
A
PulsedꢀDrainꢀCurrentꢀC
IDM
140
8.2
TA=25°C
TA=70°C
ContinuousꢀDrain
Current
AvalancheꢀCurrentꢀC
AvalancheꢀenergyꢀL=0.1mHꢀC
IDSM
A
6.6
IAS,IAR
47
A
EAS,EAR
110
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
150
PD
W
75
TA=25°C
2.6
PDSM
W
PowerꢀDissipationꢀA
1.7
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
18
48
1
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀAꢀD
MaximumꢀJunctionꢁtoꢁCase
SteadyꢁState
SteadyꢁState
40
RθJC
0.7
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ1ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
AOT412/AOB412L
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
100
V
VDS=100V,ꢀVGS=0V
10
µA
50
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
TJ=55°C
VDS=0V,ꢀVGS=ꢀ±25V
VDS=VGSꢀ,ID=250µA
VGS=10V,ꢀVDS=5V
VGS=10V,ꢀID=20A
TO220
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
3.8
nA
V
VGS(th)
ID(ON)
2.6
3.2
140
A
13.2
25
15.8
30
mΩ
TJ=125°C
VGS=7V,ꢀID=20A
TO220
15.5
12.9
19.4
15.5
19.1
mΩ
mΩ
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
VGS=10V,ꢀID=20A
TO263
VGS=7V,ꢀID=20A
TO263
15.2
30
mΩ
VDS=5V,ꢀID=20A
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
S
IS=1A,VGS=0V
0.65
1
V
A
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
60
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
2150 2680 3220
pF
pF
pF
Ω
VGS=0V,ꢀVDS=50V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
180
60
260
100
1
340
140
1.5
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
VGS=10V,ꢀVDS=50V,ꢀID=20A
0.5
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
36
14
9
45
17
15
19
16
27
10
54
20
21
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
VGS=10V,ꢀVDS=50V,ꢀRL=2Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=20A,ꢀdI/dt=500A/µs
IF=20A,ꢀdI/dt=500A/µs
15
67
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
22
96
29
ns
Qrr
nC
125
A.ꢀTheꢀvalueꢀofꢀRθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in 2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT Aꢀ=25°C.ꢀThe
PowerꢀdissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀgivenꢀapplicationꢀdepends
onꢀtheꢀuser'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀofꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C.ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀT J(MAX)=175°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeep
initialꢀTJꢀ=25°C.
D.ꢀTheꢀRθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀR θJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300 µsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,
assumingꢀaꢀmaximumꢀjunctionꢀtemperatureꢀofꢀT J(MAX)=175°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
G.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀin 2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT A=25°C.
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ2ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
AOT412/AOB412L
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
100
80
60
40
20
0
VDS=5V
10V
7.5V
7V
6.5V
60
6V
40
25°C
125°C
4
VGS=5.5V
20
0
0
2
6
8
10
0
1
2
3
4
5
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
17
16
15
14
13
12
11
2.6
2.4
2.2
2
VGS=10V
ID=20A
VGS=7V
1.8
1.6
1.4
1.2
1
VGS=10V
=7V
VGS
ID=20A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
33
1.0E+02
1.0E+01
ID=20A
125°C
28
1.0E+00
125°C
25°C
23
18
13
8
1.0Eꢁ01
1.0Eꢁ02
1.0Eꢁ03
1.0Eꢁ04
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ3ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
AOT412/AOB412L
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3600
10
VDS=50V
ID=20A
3200
2800
2400
2000
1600
1200
800
Ciss
8
6
4
2
Coss
Crss
400
0
0
0
20
40
60
80
100
0
10
20
30
40
50
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
5000
4000
3000
2000
1000
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
1Eꢁ05 0.0001 0.001 0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
PD
0.1
0.01
Ton
T
SingleꢀPulse
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ4ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
AOT412/AOB412L
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
100
TA=25°C
140
TA=100°C
120
10
100
TA=150°C
80
60
TA=125°C
1
40
20
0
0.1
0
25
50
75
100
125
150
175
1
10
100
1000
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
1000
70
60
50
40
30
20
10
0
TA=25°C
100
10
1
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
0.00001
0.001
0.1
10
1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=48°C/W
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
1
0.1
R
PD
0.01
Ton
T
SingleꢀPulse
0.001
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ5ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
AOT412/AOB412L
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
220
180
140
100
60
50
40
30
20
10
0
30
25
20
15
10
5
2
125ºC
di/dt=800A/µs
di/dt=800A/µs
125ºC
25ºC
1.5
25ºC
trr
1
Qrr
125ºC
25ºC
25ºC
125ºC
0.5
0
S
Irm
20
0
0
5
10
15
S (A)
20
25
30
0
5
10
15
IS (A)
20
25
30
I
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
180
50
40
30
20
10
0
35
30
25
20
15
10
5
2
Is=20A
Is=20A
125ºC
160
140
120
100
80
125ºC
1.5
1
25ºC
trr
25ºC
Qrr
25ºC
125ºC
25ºC
S
60
0.5
0
40
Irm
125ºC
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ6ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
AOT412/AOB412L
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
EAꢀꢀRꢀ=ꢀ1/2ꢀLIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
ꢁ
Vds
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev1:ꢀFebꢀ2011ꢀ
www.aosmd.com
Pageꢀ7ꢀofꢀ7ꢀꢀꢀꢀꢀꢀꢀ
相关型号：
©2020 ICPDF网 联系我们和版权申明