AOB416_09 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AOB416_09 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB416
100V N-Channel MOSFET
SDMOSTM
General Description
Product Summary
The AOB416 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose
applications.
VDS
100V
45A
ID (at VGS=10V)
< 36mΩ
< 43mΩ
R
DS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
100
±25
45
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
ID
IDM
IDSM
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
A
TC=100°C
32
120
6.2
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
5.0
IAS, IAR
28
A
EAS, EAR
39
mJ
TC=25°C
Power Dissipation B
TC=100°C
150
75
PD
W
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
Typ
11
Max
14
50
1
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
40
RθJC
0.7
Rev 0: April 2009
www.aosmd.com
Page 1 of 7
AOB416
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
VDS=100V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
4
nA
V
VGS(th)
ID(ON)
2.8
3.4
130
A
V
GS=10V, ID=20A
30
54
36
65
43
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=7V, ID=15A
VDS=5V, ID=20A
IS=1A,VGS=0V
34
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
28
S
V
A
0.68
1
Maximum Body-Diode Continuous Current
100
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
950
77
1180 1450
pF
pF
pF
Ω
V
GS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
110
36
145
50
21
VGS=0V, VDS=0V, f=1MHz
0.4
0.8
1.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
16
5.5
3.5
20
7
24
8.5
9
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=50V, ID=20A
6.3
10
7
VGS=10V, VDS=50V, RL=2.5Ω,
GEN=3Ω
R
tD(off)
tf
15
7
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
13
50
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19
70
25
90
ns
Qrr
nC
A. The value of RθJΑ is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2009
www.aosmd.com
Page 2 of 7
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
40
20
0
10V
VDS=5V
8V
7V
125°C
6V
25°C
7
VGS=5V
4
0
1
2
3
5
3
4
5
6
8
9
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
50
2.2
2
1.8
1.6
1.4
1.2
1
45
40
35
30
25
20
VGS=10V
ID=20A
VGS=7V
VGS=7V
ID=15A
VGS=10V
0.8
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
70
60
50
40
30
20
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: April 2009
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Page 3 of 7
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
1400
1200
1000
800
600
400
200
0
10
VDS=50V
ID=20A
Ciss
8
6
4
Crss
2
Coss
0
0
20
40
V
60
DS (Volts)
80
100
0
5
10
Qg (nC)
15
20
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
1
10
100
1000
0.00001
0.001
0.1
10
VDS (Volts)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2009
www.aosmd.com
Page 4 of 7
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
180
150
120
TA=25°C
TA=100°C
90
60
30
0
TA=150°C
TA=125°C
10
0.000001
0.00001
Time in avalanche, tA (s)
0.0001
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Figure 9: Single Pulse Avalanche capability (Note
C)
50
40
30
20
10
0
60
50
40
30
20
10
0
TA=25°C
0.01
0.1
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=45°C/W
0.1
0.01
PD
Single Pulse
Ton
10
0.001
0.00001
T
0.0001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2009
www.aosmd.com
Page 5 of 7
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
20
16
12
8
3
150
120
90
60
30
0
30
25
20
15
10
5
125ºC
di/dt=800A/µs
125ºC
di/dt=800A/µs
2.5
2
25ºC
25ºC
trr
S
1.5
1
Qrr
125ºC
125ºC
Irm
25ºC
4
0.5
25ºC
20
0
0
0
0
5
10
15
25
30
0
5
10
15
20
25
30
I
S (A)
I
S (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 13: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
150
120
90
60
30
0
30
25
20
15
10
5
30
25
20
15
10
5
2.5
2
Is=20A
125ºC
Is=20A
125ºC
trr
25ºC
1.5
1
25ºC
Qrr
125ºC
S
125º
0.5
25ºC
Irm
25ºC
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 0: April 2009
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Page 6 of 7
AOB416
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: April 2009
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Page 7 of 7
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