AOB430L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB430L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB430
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB430 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard product AOB430 is
Pb-free (meets ROHS & Sony 259 specifications).
AOB430L is a Green Product ordering option.
AOB430 and AOB430L are electrically identical.
VDS (V) = 60V
ID = 12A (Vgs=10V)
RDS(ON) < 63 mΩ (VGS =10V)
RDS(ON) < 85 mΩ (VGS = 6V)
TO-263
D2-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
V
A
TC=25°C
12
TC=100°C
ID
12
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
30
12
A
23
mJ
TC=25°C
50
PD
W
Power Dissipation B
TC=100°C
25
2
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
11.2
50
Max
13.5
60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
RθJC
2.5
3
Alpha Omega Semiconductor, Ltd.
AOB430
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=48V, VGS=0V
60
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
1
2.2
VGS=10V, VDS=5V
30
A
V
GS=10V, ID=12A
53
95
63
85
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
60
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=12A
IS=1A, VGS=0V
14
S
V
A
0.74
1
Maximum Body-Diode Continuous Current
12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
450
61
540
2
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
27
VGS=0V, VDS=0V, f=1MHz
1.35
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.5
3.8
1.2
1.9
4.2
3.4
16
10
5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=30V, ID=12A
VGS=10V, VDS=30V, RL=2.5Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
2
ns
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
27.6
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
35
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:Aug 2005
Alpha & Omega Semiconductor, Ltd.
AOB430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
10V
7V
VDS=5V
6V
15
10
5
5V
20
15
10
5
125°C
4.5V
4V
25°C
3.5V
VGS=3V
4
0
0
0
1
2
3
5
2
2.5
3
3.5
4
4.5
5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
2.2
2
70
60
50
40
VGS=10V, 12A
1.8
1.6
1.4
1.2
1
VGS=6V
VGS=10V
VGS=4.5V,6A
0
4
8
12
16
20
0.8
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
ID=12A
125°C
125°C
25°C
25°C
60
40
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
10
VDS=30V
ID=12A
600
500
400
300
200
100
0
8
6
4
2
0
Ciss
Coss
Crss
0
2
4
6
8
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
200
160
120
80
TJ(Max)=175°C, TA=25°C
TJ(Max)=175°C
TA=25°C
10µs
RDS(ON)
DC
100µs
limited
1ms, DC
1
40
0
0.1
0.1
1
10
Pulse Width (s)
100
0.1
1
10
DS (Volts)
100
1000
V
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
RθJC=3°C/W
T
1
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOB430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
14
12
10
8
L ⋅ ID
BV −VDD
tA
=
6
TA=25°C
4
2
0
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
60
40
20
0
16
12
8
4
0.001
0.01
0.1
1
10
100
1000
0
Pulse Width (s)
0
25
50
75
100
125
150
175
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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