AOB4184 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB4184 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB4184
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB4184/L uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
VDS (V) =40V
ID = 30 A
(VGS = 10V)
D2PAK package, this device is well suited for high
current load applications. AOB4184 and AOB4184L
are electrically identical.
R
DS(ON) < 10.5 mΩ (VGS = 10V)
DS(ON) < 13 mΩ (VGS = 4.5V)
R
100% UIS Tested!
-RoHS Compliant
-AOB4184L is Halogen Free
TO-263
D2PAK
D
Top View
D
S
G
S
G
Bottom View
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
40
±20
30
V
V
VGS
TC=25°C
TC=100°C
ID
24
Pulsed Drain Current C
IDM
120
12
A
Continuous Drain
Current A
Avalanche Current C
TC=25°C
TC=70°C
IDSM
IAR
10
35
A
Repetitive avalanche energy L=100uH C
EAR
61
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
11
42
Max
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
17
50
3
RθJA
RθJC
2.4
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=40V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
±100
3
nA
V
VGS(th)
ID(ON)
1.7
2.1
120
A
VGS=10V, ID=20A
8.5
13.2
10
10.5
17
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
13
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
100
0.72
S
V
A
IS=1A, VGS=0V
Maximum Body-Diode Continuous CurrentG
1
30
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1250
165
95
1500
215
135
3.5
1800
280
190
5
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
22
11
27.2
13.6
4.5
35
18
6
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=20V, ID=20A
Qgs
Qgd
tD(on)
tr
3.5
4.5
6.4
9
6.4
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
17.2
29.6
16.8
19
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
15
48
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
78
ns
Qrr
59
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0 : July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
100
80
60
40
20
0
VDS= 5V
10V
4.5V
80
60
40
20
0
4V
Vgs=3.5V
3V
125°C
25°C
0
1
2
3
4
5
2
2
2.5
3
3.5
4
4.5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
14
1.8
1.6
1.4
1.2
1
12
10
8
VGS=4.5V
VGS=10V
VGS=10V, 30A
VGS=4.5V, 20A
6
0.8
0
5
10
15
D (A)
20
25
30
I
0
25
50
75
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=12.5V
ID=20A
2000
1500
1000
500
0
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
40
0
5
10
15
g (nC)
20
25
30
Q
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
200
160
120
80
TJ(Max)=175°C, Tc=25°C
10µ
TJ(Max)=175°C
Tc=25°C
100µs
D
1ms
RDS(ON)
limited
40
1
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
TA=25°C
150°C
100°C
125°C
0
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
TCASE (°C)
Figure 13: Power De-rating (Note F)
50
40
30
20
10
0
TA=25°C
40
30
20
10
0
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB4184
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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