AOB418L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB418L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB418
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB418 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
VDS (V) = 30V
ID = 110A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 4.5V)
TO-263
D2-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±12
110
V
A
TA=25°C G
TA=100°C B
ID
68
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
200
40
A
220
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
8.1
Max
12
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
33
40
RθJL
0.84
1.5
Alpha & Omega Semiconductor, Ltd.
AOB418
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±12V
100
2
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=250µA
1
1.5
VGS=10V, VDS=5V
GS=10V, ID=30A
85
A
V
4.9
8.4
6
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
10.5
7.2
VGS=4.5V, ID=30A
VDS=5V, ID=30A
IS=1A,VGS=0V
5.9
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
103
0.73
S
V
A
1
Maximum Body-Diode Continuous Current
110
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2100
536
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
165
V
GS=0V, VDS=0V, f=1MHz
0.95
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
19.6
3.6
8
nC
nC
nC
ns
ns
ns
ns
V
GS=4.5V, VDS=15V, ID=30A
Qgs
Qgd
tD(on)
tr
5.9
15.9
34
VGS=10V, VDS=15V, RL=0.5Ω,
RGEN=3Ω
tD(off)
tf
20
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
32.5
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
D
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
3.5V
VDS=5V
3V
125°C
25°C
VGS=2.5V
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
7.5
7
1.8
1.6
1.4
1.2
1
ID=30A
VGS=10V
6.5
6
VGS=4.5V
VGS=4.5V
5.5
5
VGS=10V
4.5
0.8
0
10
20
30
D (A)
40
50
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
16
12
8
ID=30A
25°C
125°C
25°C
4
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
3000
2500
2000
1500
1000
500
5
VDS=15V
ID=30A
4
Ciss
3
2
1
0
Coss
Crss
0
0
5
10
15
20
25
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
80
60
40
20
0
100
10
1
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
120
100
80
60
40
20
0
TA=25°C
100
80
60
40
20
0
L⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
120
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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