AOB420L [ALPHA]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB420L |
| 厂家： | 
ALPHA INDUSTRIES |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev 2: Oct 2004
AOB420, AOB420L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB420 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
AOB420L (Green Product) is offered in a Lead Free
package.
VDS (V) = 30V
ID = 110A
R
DS(ON) < 6.5mΩ (VGS = 10V)
DS(ON) < 10.0mΩ (VGS = 4.5V)
R
TO-263
D2-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
110
65
V
TC=25°C G
TC=100°C B
ID
A
IDM
IAR
EAR
Pulsed Drain Current
200
30
120
100
50
Avalanche Current C
A
mJ
Repetitive avalanche energy L=0.1mH C
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
TA=70°C
3.1
2
PDSM
W
Power Dissipation A
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
8.1
33
1
Max
12
40
1.5
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.5
nA
V
A
VDS=VGS ID=250µA
VGS=10V, VDS=5V
1.5
110
2.15
V
GS=10V, ID=30A
5.05
7.7
8.2
60
0.72
6.5
11
10
mΩ
mΩ
S
V
A
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=30A
VDS=5V, ID=30A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
110
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1320
533
154
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
0.95
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
25.5
13.3
3.2
6.7
7.7
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=4.5V, VDS=15V, ID=30A
28
ns
ns
ns
ns
V
R
GS=10V, VDS=15V, RL=0.5Ω,
GEN=3Ω
tD(off)
tf
22.2
20.7
30.7
21.8
trr
Qrr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
50
40
30
20
10
0
10V
5.0V
4.0V
50
40
30
20
10
0
VDS=5V
125°C
3.5V
25°C
VGS=3V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
9
1.8
1.6
1.4
1.2
1
ID=30A
VGS=4.5V
VGS=10V
8
7
VGS=4.5V
6
VGS=10V
5
4
0.8
0
10
20
30
40
50
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
16
12
8
ID=30A
25°C
125°C
25°C
4
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
8
VDS=15V
ID=30A
2000
1600
1200
800
400
0
Ciss
6
Coss
4
2
Crss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
0
5
10
15
DS (Volts)
20
25
30
V
Figure 8: Capacitance Characteristics
1000
100
10
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
1
DC
0.01
0.1
1
10
100
1000
0.1
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
0.1
PD
0.01
0.001
Ton
10
Single Pulse
0.001
T
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L ⋅ ID
BV −VDD
tA
=
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
120
100
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Alpha & Omega Semiconductor, Ltd.
Document No.
PD-00081
rev C
Version
Title
AOB420 Marking Description
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
D2PAK PACKAGE MARKING DESCRIPTION
B 4 2 0
B 4 2 0
Standard product
Green product
NOTE:
LOGO - AOS LOGO
B420
F&A
Y
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
W
- WEEK CODE.
L T
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
CODE
B420
B420
Standard product
Green product
AOB420
AOB420L
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
TO-263 (D2PAK)
Tape and Reel Data
TO-263 (D2PAK) Carrier Tape
FEEDINGDIRECTION
TO-263 (D2PAK) Reel
TO-263 (D2PAK)
Leader / Trailer
& Orientation
相关型号：
©2020 ICPDF网 联系我们和版权申明