AOB418L [FREESCALE]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AOB418L |
| 厂家： | 
Freescale |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT418L/AOB418L
100V N-Channel MOSFET
General Description
The AOT418L/AOB418L is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with low
gate charge and low Q .The result is outstanding
efficiency with controlled switching behavior. This
rr
universal technology is well suited for PWM, load switching and general purpose applications.
Features
VDS
100V
105A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
< 10mΩ
< 12mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
100
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
±25
VGS
Continuous Drain
Current G
Pulsed Drain Current C
TC=25°C
105
82
ID
TC=100°C
A
IDM
280
TA=25°C
TA=70°C
9.5
Continuous Drain
Current
IDSM
A
7.5
Avalanche Current C
IAS, IAR
60
A
Avalanche energy L=0.1mH C
EAS, EAR
180
mJ
TC=25°C
Power Dissipation B
TC=100°C
333
PD
W
167
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
11
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
47
60
Steady-State
Steady-State
RθJC
0.36
0.45
1/7
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AOT418L/AOB418L
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
VDS=100V, VGS=0V
10
50
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
3.9
nA
V
VGS(th)
ID(ON)
2.6
3.3
280
A
V
GS=10V, ID=20A
8.2
15
10
18
mΩ
TJ=125°C
TO220
VGS=7V, ID=20A
TO220
9.1
7.9
12
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263
9.7
VGS=7V, ID=20A
TO263
8.8
50
11.7
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.67
1
V
105
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3460
265
78
4334
382
5200
500
185
0.7
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
131
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=20A
0.2
0.45
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
55
16
13
69
20
22
21
15
38
12
27
129
83
24
31
nC
nC
nC
ns
ns
ns
ns
ns
nC
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19
90
35
Qrr
170
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
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AOT418L/AOB418L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
6V
7V
5.5V
5V
125°C
4
25°C
VGS=4.5V
2
3
5
6
7
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
2.4
2.2
2
VGS=10V
ID=20A
VGS=7V
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=7V
ID=20A
6
0.8
4
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
Temperature (°C)
Figure 4: On-Resistance vs. Junction
I
D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Temperature (Note E)
20
17
14
11
8
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
5
0.0
0.2
0.4
0.6
0.8
1.0
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AOT418L/AOB418L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
6000
5000
4000
3000
2000
1000
0
10
VDS=50V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
5000
4000
3000
2000
1000
0
RDS(ON)
limited
10µs
TJ(Max)=175°C
TC=25°C
100µs
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
1E-05 0.0001 0.001 0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
0.1
PD
0.01
Single Pulse
0.0001
Ton
T
0.001
0.000001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOT418L/AOB418L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
350
300
250
200
150
100
50
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE (°C)
Figure 13: Power De-rating (Note F)
1000
100
10
120
100
80
60
40
20
0
TA=25°C
1
0.01
1
100
10000
0
25
50
75
100
125
150
17
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
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AOT418L/AOB418L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
200
160
120
80
50
40
30
20
10
0
35
3
di/dt=800A/µs
di/dt=800A/µs
125ºC
30
2.5
2
125ºC
25ºC
25
trr
25ºC
20
15
10
5
1.5
1
Qrr
Irm
125ºC
S
125ºC
25ºC
20
40
0.5
0
25ºC
0
0
5
10
15
25
30
0
5
10
15
20
25
30
IS (A)
IS (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
250
200
150
100
50
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
2.5
2
Is=20A
Is=20A
125º
125ºC
1.5
1
25ºC
25ºC
trr
S
Qrr
125º
125ºC
0.5
0
25ºC
Irm
25ºC
200
0
0
0
0
200
400
600
800
1000
0
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
6/7
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AOT418L/AOB418L
100V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
I AR
Vdd
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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