AOB414L [ETC]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB414L |
| 厂家： | 
ETC |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev 2: Nov. 2004
AOB414, AOB414L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB414 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOB414L ( Green Product ) is
offered in a lead-free package.
VDS (V) = 30V
ID = 110A
RDS(ON) < 4.2mΩ (VGS = 10V)
DS(ON) < 4.8mΩ (VGS = 4.5V)
R
TO-263
D2-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±12
110
80
V
A
TC=25°C G
TC=100°C B
ID
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
200
30
A
Repetitive avalanche energy L=0.1mH C
140
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
3.1
PDSM
W
Power Dissipation A
TA=70°C
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
8.1
Max
12
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
33
40
RθJL
0.84
1.5
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±12V
100
1.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
0.8
1.1
VGS=4.5V, VDS=5V
110
A
V
GS=10V, ID=30A
3.2
5
4.2
6
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=30A
VDS=5V, ID=30A
IS=1A,VGS=0V
3.8
102
0.64
4.8
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
1
Maximum Body-Diode Continuous Current
110
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
9130
625
387
0.4
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=30A
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
72.4
12.8
18.4
15
nC
nC
nC
ns
ns
ns
ns
29.2
106.5
52
VGS=10V, VDS=15V, RL=0.5Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
31.2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
20.3
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
50
40
30
20
10
0
10V
VDS=5V
4.5V
3.0V
2.5V
VGS=2V
125°C
25°C
2
0
1
2
3
4
5
0
0.5
1
1.5
2.5
VDS (Volts)
Figure 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=30A
VGS=10V
VGS=4.5V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=30A
125°C
125°C
6
25°C
4
25°C
2
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100000
5
4
3
2
1
0
VDS=15V
ID=30A
Ciss
10000
1000
100
Coss
Crss
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
70
80
90
0
5
10
15
DS (Volts)
20
25
30
V
Figure 8: Capacitance Characteristics
1000
100
10
200
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
160
120
80
40
0
100µs
10ms
0.1s
1ms
1s
10s
TJ(Max)=150°C
TA=25°C
1
DC
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
0.1
0.01
PD
Single Pulse
Ton
10
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L⋅ ID
tA
=
BV −VDD
0.00001
0.0001
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
120
100
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Alpha & Omega Semiconductor, Ltd.
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