AOB416 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB416 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB416
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB416 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOB416 is Pb-
free (meets ROHS & Sony 259 specifications).
AOB416L is a Green Product ordering option.
AOB416 and AOB416L are electrically identical.
VDS (V) = 30V
ID = 110A (VGS = 10V)
R
DS(ON) < 4.5mΩ (VGS = 10V) @ 30A
DS(ON) < 6.5mΩ (VGS = 4.5V) @ 30A
R
TO-263
D2-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
110
78
V
A
TC=25°C G
TC=100°C B
ID
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
200
30
A
Repetitive avalanche energy L=0.1mH C
140
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
3.1
PDSM
W
Power Dissipation A
TA=70°C
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
8.1
Max
12
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
33
40
RθJL
0.84
1.5
Alpha & Omega Semiconductor, Ltd.
AOB416
Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=30A
100
2.4
nA
V
VGS(th)
ID(ON)
1.2
1.8
110
A
3.5
5.3
4.5
6.5
6.5
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=30A
5.15
94
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=30A
S
V
A
IS=1A,VGS=0V
0.64
1
Maximum Body-Diode Continuous Current
110
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6060
638
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
355
VGS=0V, VDS=0V, f=1MHz
0.45
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
96.4
46.4
13.6
16
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=4.5V, VDS=15V, ID=30A
Qgs
Qgd
tD(on)
tr
15.5
28.2
52.5
31
VGS=10V, VDS=15V, RL=0.5Ω,
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
31.2
19.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 4 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
4.5V
VDS=5V
3.5V
125°C
VGS=3V
25°C
0
1
2
3
4
5
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=30A
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=30A
125°C
125°C
6
25°C
4
25°C
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
8
VDS=15V
ID=30A
Ciss
7000
6000
5000
4000
3000
2000
1000
0
6
4
Coss
Crss
2
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
200
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
160
120
80
40
0
100µs
10ms
0.1s
1ms
1s
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.01
0.1
1
10
100
1000
0.1
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
10
T
0.00001
0.0001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L ⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
120
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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