AOB411L [AOS]
60V P-Channel MOSFET; 60V P沟道MOSFET
| 型号： | AOB411L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 60V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB411L
60V P-Channel MOSFET
General Description
Product Summary
VDS
The AOB411L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
-60V
-78A
ID (at VGS=-10V)
< 16.5mΩ
< 22mΩ
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
100% UIS Tested
100% Rg Tested
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-60
V
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
±20
-78
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
-55
A
-230
TA=25°C
TA=70°C
-8
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
-6.5
-77
IAS, IAR
A
EAS, EAR
296
187
mJ
TC=25°C
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
93
2.1
PDSM
W
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
11
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
47
60
Steady-State
Steady-State
RθJC
0.6
0.8
Rev 0: Mar. 2011
www.aosmd.com
Page 1 of 6
AOB411L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
V
DS=-60V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
±100
-2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.5
-2
V
V
GS=-10V, VDS=-5V
GS=-10V, ID=-20A
-230
A
13.5
20.5
17
16.5
25
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-20A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
22
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
48
S
V
A
-0.7
-1
-105
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4260
335
140
1.4
5330
483
234
2.8
6400
630
330
4.2
pF
pF
pF
Ω
V
V
GS=0V, VDS=-30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
65
35
83
40
100
50
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=-10V, VDS=-30V, ID=-20A
15
18
17.5
20
V
GS=-10V, VDS=-30V, RL=1.5Ω,
ns
RGEN=3Ω
tD(off)
tf
83.5
37
ns
ns
trr
IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
27
36
ns
Qrr
110
nC
165
215
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Mar. 2011
www.aosmd.com
Page 2 of 6
AOB411L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
-4.5V
-5V
-7V
VDS=-5V
-10V
-4V
125°C
-3.5V
25°C
VGS=-3V
4
1
2
3
4
5
6
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
20
18
16
14
12
10
2
1.8
1.6
1.4
1.2
1
VGS=-4.5V
VGS=-10V
ID=-20A
VGS=-4.5V
ID=-20A
VGS=-10V
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
35
30
25
20
15
10
1.0E+02
1.0E+01
ID=-20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.8
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
1.0
1.2
VGS (Volts)
V
SD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Mar. 2011
www.aosmd.com
Page 3 of 6
AOB411L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
7000
6000
5000
4000
3000
2000
1000
0
10
8
VDS=-30V
ID=-20A
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
-VDS (Volts)
40
50
60
0
10
20
30
40
50
60
70
80
90
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Operating Area (Note F)
10
1
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=0.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Mar. 2011
www.aosmd.com
Page 4 of 6
AOB411L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
200
160
TA=25°C
120
TA=100°C
100
TA=150°C
80
40
0
TA=125°C
10
1
10
100
1000
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
1000
100
10
90
TA=25°C
80
70
60
50
40
30
20
10
0
1
0.01
1
100
Pulse Width (s)
10000
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
T
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Mar. 2011
www.aosmd.com
Page 5 of 6
AOB411L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 0: Mar. 2011
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明