APTGF180H60 [ADPOW]
Full - Bridge NPT IGBT Power Module; 全 - 桥NPT IGBT功率模块
| 型号： | APTGF180H60 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full - Bridge NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF180H60
VCES = 600V
IC = 180A @ Tc = 80°C
Full - bridge
NPT IGBT Power Module
Application
Sꢀ Welding converters
Sꢀ Switched Mode Power Supplies
Sꢀ Uninterruptible Power Supplies
Sꢀ Motor control
Features
Sꢀ Non Punch Through (NPT) THUNDERBOLT IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Sꢀ Kelvin emitter for easy drive
Sꢀ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
Sꢀ High level of integration
OUT1
G1
E1
G2
E2
VBUS
0/VBUS
Benefits
Sꢀ Outstanding performance at high frequency
operation
E4
Sꢀ Stable temperature behavior
Sꢀ Very rugged
E3
G4
G3
Sꢀ Direct mounting to heatsink (isolated package)
Sꢀ Low junction to case thermal resistance
OUT2
S
Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
VCES
Collector - Emitter Breakdown Voltage
Continuous Collector Current
V
Tc = 25°C
220
IC
A
Tc = 80°C
Tc = 25°C
180
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
630
±20
V
W
Tc = 25°C
833
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
630A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 6
APT website – http://www.advancedpower.com
APTGF180H60
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
600
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 150µA
V
Tj = 25°C
150
3000
2.5
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 600V
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.0
2.2
VGE = 15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
V
IC = 180A
VGE = VCE, IC = 2mA
VGE = ±20V, VCE = 0V
3
5
IGES
Gate – Emitter Leakage Current
±200 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Input Capacitance
8.6
VCE = 25V
f = 1MHz
nF
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
0.94
0.8
660
580
400
26
VGS = 15V
VBus = 300V
IC = 180A
nC
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Inductive Switching (25°C)
VGE = 15V
25
150
30
6.74
5.74
26
25
170
40
ns
mJ
ns
VBus = 400V
Td(off) Turn-off Delay Time
IC = 180A
Tf
Eon
Eoff
Td(on)
Tr
Fall Time
RG = 2.5ꢁ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
Turn-on Delay Time
Rise Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
Td(off) Turn-off Delay Time
IC = 180A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
RG = 2.5ꢁ
8.6
7
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
IF = 200A
IF = 400A
IF = 200A
Tc = 80°C
200
1.6
1.9
1.4
A
1.8
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 200A
180
220
780
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 400V
di/dt =400A/µs
IF = 200A
Qrr
nC
VR = 400V
di/dt =400A/µs
2900
ꢀ Eon includes diode reverse recovery
ꢀ In accordance with JEDEC standard JESD24-1
2 - 6
APT website – http://www.advancedpower.com
APTGF180H60
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.15
RthJC
Junction to Case
°C/W
0.32
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
-40
-40
-40
3
150
125
100
5
3.5
280
°C
M6
M5
Torque Mounting torque
N.m
g
For terminals
2
Wt
Package Weight
Package outline
3 - 6
APT website – http://www.advancedpower.com
APTGF180H60
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
600
500
400
300
200
100
0
600
500
400
300
200
100
0
250µs Pulse Test
< 0.5% Duty cycle
TJ=-55°C
250µs Pulse Test
< 0.5% Duty cycle
TJ=-55°C
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
0
1
2
3
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
600
500
400
300
200
100
0
18
16
14
12
10
8
6
4
2
0
250µs Pulse Test
< 0.5% Duty cycle
IC = 180A
VCE=120V
TJ = 25°C
VCE=300V
VCE=480V
TJ=125°C
TJ=25°C
TJ=-55°C
0
100 200 300 400 500 600 700
0
1
2
3
4
5
6
7
8
9
10
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
4
3.5
3
8
7
6
5
4
3
2
1
0
TJ = 25°C
250µs Pulse Test
Ic=360A
Ic=180A
< 0.5% Duty cycle
Ic=360A
2.5
2
1.5
1
Ic=180A
Ic=90A
Ic=90A
250µs Pulse Test
< 0.5% Duty cycle
0.5
0
V
GE = 15V
6
8
10
12
14
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
320
240
160
80
1.20
1.10
1.00
0.90
0.80
0.70
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
4 - 6
APT website – http://www.advancedpower.com
APTGF180H60
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
35
30
25
20
15
250
200
150
100
50
VGE=15V,
TJ=125°C
VGE = 15V
VGE=15V,
TJ=25°C
Tj = 25°C
V
CE = 400V
VCE = 400V
R
G = 2.5Ω
R
G = 2.5Ω
50
100
150
200
250
300
50
100
150
200
250
300
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
80
60
40
20
0
80
60
40
20
0
VCE = 400V
VCE = 400V, VGE = 15V, RG = 2.5Ω
TJ = 125°C
RG = 2.5Ω
VGE=15V,
TJ=125°C
TJ = 25°C
50
100
150
200
250
300
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
16
12
10
8
VCE = 400V
TJ = 125°C
VCE = 400V
G = 2.5Ω
V
R
GE = 15V
R
G = 2.5Ω
12
TJ=125°C,
VGE=15V
6
TJ = 25°C
8
4
0
TJ=25°C,
VGE=15V
4
2
0
50
100
150
200
250
300
50
100
150
200
250
300
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
32
24
16
8
20
16
12
8
VCE = 400V
Eon, 360A
VCE = 400V
Eon, 360A
Eoff, 360A
V
GE = 15V
G = 2.5Ω
VGE = 15V
Eoff, 360A
TJ= 125°C
R
Eoff, 180A
Eon, 180A
Eoff, 90A
Eon, 180A
Eoff, 180A
Eon, 90A
4
Eon, 90A
Eoff, 90A
25
0
0
0
5
10
15
20
25
0
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 6
APT website – http://www.advancedpower.com
APTGF180H60
Capacitance vs Collector to Emitter Voltage
100000
Minimum Switching Safe Operating Area
700
600
500
400
300
200
100
0
Cies
10000
1000
100
Coes
Cres
0
10
20
30
40
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
0.9
0.35
0.25
0.15
0.08
0.06
0.04
0.02
0
0.05
0.025
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
100
80
60
40
20
0
VCE = 400V
D = 50%
RG = 2.5Ω
TJ = 125°C
40
80
120
160
200
240
IC, Collector Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
APT website – http://www.advancedpower.com
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