APTGF20X60BTP2 [MICROSEMI]
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24;
| 型号： | APTGF20X60BTP2 |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24 局域网 电动机控制 栅 瞄准线 晶体管 |
| 文件： | 总4页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF20X60RTP2
APTGF20X60BTP2
Input rectifier bridge +
Brake + 3 Phase Bridge
VCES = 600V
IC = 20A @ Tc = 80°C
Application
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Features
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AC Motor control
Non Punch Through (NPT) Fast IGBT®
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-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
•
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
APTGF20X60RTP2: Without Brake (Pin 7 & 14 not connected)
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•
•
•
•
•
•
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Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
14
20 19 18 17 16 15
13 12 11 10
21
22
9
8
7
23
24
1
2
3
4
5
6
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
VRRM
ID
Parameter
Max ratings
1600
Unit
V
Repetitive Peak Reverse Voltage
DC Forward Current
TC = 80°C
Tj = 25°C
20
300
230
A
IFSM
Surge Forward Current
tp = 10ms
Tj = 150°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 4
APT website – http://www.advancedpower.com
APTGF20X60RTP2
APTGF20X60BTP2
IGBT & Diode Brake (only for APTGF20X60BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
600
TC = 25°C
TC = 80°C
TC = 25°C
20
10
25
±20
80
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
TC = 80°C
IF
DC Forward Current
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
600
TC = 25°C
TC = 80°C
TC = 25°C
35
20
70
±20
125
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
TC = 80°C
TC = 80°C
SCSOA Short circuit Safe Operating Area
80A @ 360V
IF
DC Forward Current
20
40
A
IFSM
Surge Forward Current
tp = 1ms
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
VR = 1600V
IF = 30A
Min Typ Max Unit
IR
Reverse Current
Forward Voltage
Junction to Case
Tj = 150°C
Tj = 25°C
Tj = 150°C
2
1.3
1
mA
1.5
1.05
1
VF
V
IF = 20A
°C/W
RthJC
IGBT Brake & Diode (only for APTGF20X60BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.5
0.8
500
µA
VGE = 0V
VCE = 600V
ICES
Zero Gate Voltage Collector Current
mA
1.95 2.35
2.2
5.5
VGE = 15V
IC = 10A
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
VGE = VCE , IC = 0.35 mA
VGE = 20V, VCE = 0V
VGE = 0V, VCE = 25V
f = 1MHz
4.5
6.5
300
V
nA
IGES
Gate – Emitter Leakage Current
Cies
Input Capacitance
800
pF
Tj = 25°C
Tj = 125°C
1.25 1.75
1.2
VGE = 0V
IF = 20A
VF
Forward Voltage
Junction to Case
V
IGBT
Diode
1.5
1.5
°C/W
RthJC
2 - 4
APT website – http://www.advancedpower.com
APTGF20X60RTP2
APTGF20X60BTP2
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
600
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500µA
V
VGE = 0V
VCE = 600V
Tj = 25°C
0.7
1.0
1.95 2.45
2.2
500
µA
mA
ICES
Zero Gate Voltage Collector Current
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 20A
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
VGE = VCE , IC = 0.5 mA
VGE = 20V, VCE = 0V
4.5
5.5
6.5
300
V
nA
IGES
Gate – Emitter Leakage Current
VGE = 0V, VCE = 25V
f = 1MHz
Cies
Input Capacitance
1100
pF
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 20A
RG = 47Ω
Td(on)
Tr
Turn-on Delay Time
Rise Time
50
50
ns
Td(off) Turn-off Delay Time
250
30
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
Td(on)
Tr
Turn-on Delay Time
Rise Time
50
50
270
40
0.7
1.25
1.2
ns
V
Bus = 300V
Td(off) Turn-off Delay Time
Tf
Eoff
IC = 20A
RG = 47Ω
Fall Time
Turn off Energy
mJ
V
VGE = 0V
IF = 20A
Tj = 25°C
Tj = 125°C
1.7
VF
Forward Voltage
IF = 20A
VR = 300V
di/dt=700A/µs
Tj = 25°C
1.7
2.7
Qrr
Reverse Recovery Charge
Junction to Case
µC
Tj = 125°C
IGBT
Diode
1
1.5
°C/W
RthJC
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
5
kΩ
K
B 25/50 T25 = 298.16 K
3375
R25
RT =
T: Thermistor temperature
RT: Thermistor value at T
»
ÿ
Ÿ
≈
’
1
1
∆
÷
÷
exp B
−
…
25 / 50
∆
T25
T
…
Ÿ
⁄
«
◊
3. Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Torque
Wt
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
-40
-40
-40
150
125
125
3.3
°C
To Heatsink
M5
N.m
g
Package Weight
185
3 - 4
APT website – http://www.advancedpower.com
APTGF20X60RTP2
APTGF20X60BTP2
4. Package outline
PIN 1
PIN 24
ALL DIMENSIONS MARKED" * " ARE TOLERENCEDAS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
4 - 4
APT website – http://www.advancedpower.com
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