APTGF180SK60T [ADPOW]

Buck chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
APTGF180SK60T
型号: APTGF180SK60T
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Buck chopper NPT IGBT Power Module
降压斩波NPT IGBT功率模块

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
文件: 总6页 (文件大小:303K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
APTGF180SK60T  
VCES = 600V  
Buck chopper  
IC = 180A @ Tc = 80°C  
NPT IGBT Power Module  
Application  
Sꢀ AC and DC motor control  
Sꢀ Switched Mode Power Supplies  
VBUS  
NTC2  
Q1  
Features  
G1  
E1  
Sꢀ Non Punch Through (NPT) THUNDERBOLT IGBT®  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 100 kHz  
Soft recovery parallel diodes  
Low diode VF  
OUT  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS SENSE  
Sꢀ Kelvin emitter for easy drive  
Sꢀ Very low stray inductance  
-
-
Symmetrical design  
0/VBUS  
NTC1  
Lead frames for power connections  
Sꢀ Internal thermistor for temperature monitoring  
Sꢀ High level of integration  
Benefits  
Sꢀ Outstanding performance at high frequency  
operation  
Sꢀ Stable temperature behavior  
Sꢀ Very rugged  
0/VBUS  
OUT  
OUT  
SENSE  
Sꢀ Direct mounting to heatsink (isolated package)  
Sꢀ Low junction to case thermal resistance  
Sꢀ Solderable terminals both for power and signal for  
easy PCB mounting  
Sꢀ Easy paralleling due to positive TC of VCEsat  
Sꢀ Low profile  
VBUS  
0/VBUS  
E1  
G1  
NTC2  
NTC1  
0/VBUS  
SENSE  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
600  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
Continuous Collector Current  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
220  
IC  
A
180  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
630  
±20  
V
W
Tc = 25°C  
833  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C  
630A @ 600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 6  
APT website – http://www.advancedpower.com  
APTGF180SK60T  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
BVCES Collector - Emitter Breakdown Voltage  
VGE = 0V, IC = 150µA  
600  
V
VGE = 0V  
Tj = 25°C  
150  
3000  
2.5  
ICES  
Zero Gate Voltage Collector Current  
µA  
VCE = 600V  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
2.0  
2.2  
VGE =15V  
VCE(on) Collector Emitter on Voltage  
VGE(th) Gate Threshold Voltage  
V
V
IC = 180A  
VGE = VCE, IC = 2mA  
VGE = 20 V, VCE = 0V  
3
5
IGES  
Gate – Emitter Leakage Current  
±200 nA  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
VGE = 0V  
Min Typ Max Unit  
Cies  
Coes  
Cres  
Qg  
Qge  
Qgc  
Td(on)  
Tr  
Input Capacitance  
8.6  
VCE = 25V  
f = 1MHz  
nF  
Output Capacitance  
Reverse Transfer Capacitance  
Total gate Charge  
0.94  
0.8  
660  
580  
400  
26  
V
GS = 15V  
VBus = 300V  
IC = 180A  
nC  
Gate – Emitter Charge  
Gate – Collector Charge  
Turn-on Delay Time  
Rise Time  
Inductive Switching (25°C)  
VGE = 15V  
25  
150  
30  
6.74  
5.74  
26  
ns  
mJ  
ns  
VBus = 400V  
Td(off) Turn-off Delay Time  
IC = 180A  
Tf  
Eon  
Eoff  
Td(on)  
Tr  
Fall Time  
RG = 2.5 ꢁ  
Turn-on Switching Energy  
Turn-off Switching Energy  
Turn-on Delay Time  
Rise Time  
Inductive Switching (125°C)  
VGE = 15V  
25  
170  
VBus = 400V  
Td(off) Turn-off Delay Time  
IC = 180A  
Tf  
Eon  
Fall Time  
Turn-on Switching Energy ꢀ  
40  
RG = 2.5 ꢁ  
8.6  
7
mJ  
Eoff  
Turn-off Switching Energy ꢀ  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
50% duty cycle  
IF = 200A  
Tc = 80°C  
IF(AV)  
Maximum Average Forward Current  
200  
1.6  
1.9  
1.4  
A
1.8  
IF = 400A  
IF = 200A  
VF  
Diode Forward Voltage  
V
Tj = 125°C  
Tj = 25°C  
IF = 200A  
180  
trr  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
VR = 400V  
di/dt =400A/µs  
IF = 200A  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
220  
780  
Qrr  
nC  
VR = 400V  
di/dt =400A/µs  
2900  
Eon includes diode reverse recovery  
In accordance with JEDEC standard JESD24-1  
2 - 6  
APT website – http://www.advancedpower.com  
APTGF180SK60T  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
0.15  
0.32  
RthJC  
Junction to Case  
°C/W  
Diode  
RMS Isolation Voltage, any terminal to case t =1 min,  
I isol<1mA, 50/60Hz  
VISOL  
2500  
V
TJ  
TSTG  
TC  
Operating junction temperature range  
Storage Temperature Range  
-40  
-40  
-40  
150  
125  
100  
4.7  
°C  
Operating Case Temperature  
Torque Mounting torque  
To Heatsink  
M5  
N.m  
g
Wt  
Package Weight  
160  
Temperature sensor NTC  
Symbol Characteristic  
Min Typ Max Unit  
R25  
Resistance @ 25°C  
68  
kꢁ  
B25/85 T25 = 298.16 K  
4080  
K
R25  
T: Thermistor temperature  
RT: Thermistor value at T  
RT  
!
1
2
3
.
/
/
1
1
T
25 /85  
exp B  
"
 
T25  
0
#
Package outline  
3 - 6  
APT website – http://www.advancedpower.com  
APTGF180SK60T  
Typical Performance Curve  
Output characteristics (VGE=15V)  
Output Characteristics (VGE=10V)  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
250µs Pulse Test  
< 0.5% Duty cycle  
TJ=-55°C  
250µs Pulse Test  
TJ=-55°C  
< 0.5% Duty cycle  
TJ=25°C  
TJ=25°C  
TJ=125°C  
TJ=125°C  
0
1
2
3
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)  
VCE, Collector to Emitter Voltage (V)  
Transfer Characteristics  
Gate Charge  
600  
500  
400  
300  
200  
100  
0
18  
16  
14  
12  
10  
8
6
4
2
0
250µs Pulse Test  
< 0.5% Duty cycle  
IC = 180A  
VCE=120V  
TJ = 25°C  
VCE=300V  
VCE=480V  
TJ=125°C  
TJ=25°C  
TJ=-55°C  
0
100 200 300 400 500 600 700  
0
1
2
3
4
5
6
7
8
9
10  
VGE, Gate to Emitter Voltage (V)  
Gate Charge (nC)  
On state Voltage vs Junction Temperature  
On state Voltage vs Gate to Emitter Volt.  
4
3.5  
3
8
7
6
5
4
3
2
1
0
TJ = 25°C  
250µs Pulse Test  
Ic=360A  
Ic=180A  
< 0.5% Duty cycle  
Ic=360A  
2.5  
2
1.5  
1
Ic=180A  
Ic=90A  
Ic=90A  
250µs Pulse Test  
< 0.5% Duty cycle  
0.5  
0
V
GE = 15V  
6
8
10  
12  
14  
16  
-50 -25  
0
25  
50  
75  
100 125  
VGE, Gate to Emitter Voltage (V)  
TJ, Junction Temperature (°C)  
Breakdown Voltage vs Junction Temp.  
DC Collector Current vs Case Temperature  
320  
240  
160  
80  
1.20  
1.10  
1.00  
0.90  
0.80  
0.70  
0
-50 -25  
0
25  
50  
75 100 125  
-50 -25  
0
25 50 75 100 125 150  
TJ, Junction Temperature (°C)  
TC, Case Temperature (°C)  
4 - 6  
APT website – http://www.advancedpower.com  
APTGF180SK60T  
Turn-On Delay Time vs Collector Current  
Turn-Off Delay Time vs Collector Current  
35  
30  
25  
20  
15  
250  
200  
150  
100  
50  
VGE=15V,  
TJ=125°C  
VGE = 15V  
VGE=15V,  
TJ=25°C  
Tj = 25°C  
V
CE = 400V  
VCE = 400V  
R
G = 2.5  
R
G = 2.5Ω  
50  
100  
150  
200  
250  
300  
50  
100  
150  
200  
250  
300  
I
CE, Collector to Emitter Current (A)  
ICE, Collector to Emitter Current (A)  
Current Rise Time vs Collector Current  
Current Fall Time vs Collector Current  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
VCE = 400V  
VCE = 400V, VGE = 15V, RG = 2.5Ω  
TJ = 125°C  
RG = 2.5Ω  
VGE=15V,  
TJ=125°C  
TJ = 25°C  
50  
100  
150  
200  
250  
300  
50  
100  
150  
200  
250  
300  
ICE, Collector to Emitter Current (A)  
ICE, Collector to Emitter Current (A)  
Turn-Off Energy Loss vs Collector Current  
Turn-On Energy Loss vs Collector Current  
16  
12  
10  
8
VCE = 400V  
TJ = 125°C  
VCE = 400V  
G = 2.5Ω  
V
R
GE = 15V  
R
G = 2.5Ω  
12  
TJ=125°C,  
VGE=15V  
6
TJ = 25°C  
8
4
0
TJ=25°C,  
VGE=15V  
4
2
0
50  
100  
150  
200  
250  
300  
50  
100  
150  
200  
250  
300  
I
CE, Collector to Emitter Current (A)  
ICE, Collector to Emitter Current (A)  
Switching Energy Losses vs Junction Temp.  
Switching Energy Losses vs Gate Resistance  
32  
24  
16  
8
20  
16  
12  
8
VCE = 400V  
Eon, 360A  
VCE = 400V  
Eon, 360A  
Eoff, 360A  
V
GE = 15V  
G = 2.5  
VGE = 15V  
Eoff, 360A  
TJ= 125°C  
R
Eoff, 180A  
Eon, 180A  
Eoff, 90A  
Eon, 180A  
Eoff, 180A  
Eon, 90A  
4
Eon, 90A  
Eoff, 90A  
25  
0
0
0
5
10  
15  
20  
25  
0
50  
75  
100  
125  
Gate Resistance (Ohms)  
TJ, Junction Temperature (°C)  
5 - 6  
APT website – http://www.advancedpower.com  
APTGF180SK60T  
Capacitance vs Collector to Emitter Voltage  
100000  
Minimum Switching Safe Operating Area  
700  
600  
500  
400  
300  
200  
100  
0
Cies  
10000  
1000  
100  
Coes  
Cres  
0
10  
20  
30  
40  
50  
0
200  
400  
600  
800  
VCE, Collector to Emitter Voltage (V)  
VCE, Collector to Emitter Voltage (V)  
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
0.16  
0.14  
0.12  
0.1  
0.9  
0.35  
0.25  
0.15  
0.08  
0.06  
0.04  
0.02  
0
0.05  
0.025  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration (Seconds)  
Operating Frequency vs Collector Current  
100  
80  
60  
40  
20  
0
VCE = 400V  
D = 50%  
RG = 2.5  
TJ = 125°C  
40  
80  
120  
160  
200  
240  
IC, Collector Current (A)  
APT reserves the right to change, without notice, the specifications and information contained herein  
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
6 - 6  
APT website – http://www.advancedpower.com  

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