APTGF200U60D4 [ADPOW]
Single switch NPT IGBT Power Module; 单开关NPT IGBT功率模块
| 型号： | APTGF200U60D4 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Single switch NPT IGBT Power Module |
| 文件： | 总5页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF200U60D4
VCES = 600V
Single switch
IC = 200A @ Tc = 80°C
NPT IGBT Power Module
Application
•
•
•
•
Welding converters
1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
3
5
Features
•
Non Punch Through (NPT) fast IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
2
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Low stray inductance
-
-
M6 connectors for power
M4 connectors for signal
•
High level of integration
2
1
Benefits
4
•
Outstanding performance at high frequency
operation
•
•
•
•
•
Stable temperature behavior
5
3
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
250
200
400
±20
735
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operation Area
400A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGF200U60D4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1
1
500
µA
mA
VGE = 0V
ICES
Zero Gate Voltage Collector Current
VCE = 600V
1.95 2.45
2.2
5.5
VGE = 15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 200A
VGE = VCE , IC = 4mA
4.5
6.5
400
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
9
nF
f = 1MHz
0.8
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
163
43
253
33
VBus = 300V
ns
IC = 200A
RG = 1.5Ω
Inductive Switching (125°C)
183
VGE = ±15V
49
285
ns
VBus = 300V
IC = 200A
Tf
Eon
Eoff
Fall Time
Turn on Energy
Turn off Energy
41
RG = 1.5Ω
4.6
mJ
6.3
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
VR=600V
250
500
1.6
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF = 200A
VGE = 0V
IF = 200A
VR = 300V
di/dt
Tj = 25°C
Tj = 125°C
Tj = 125°C
1.25
1.2
4.1
12
19
VF
ER
Qrr
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
V
mJ
µC
Tj = 25°C
Tj = 125°C
=4000A/µs
2 - 5
APT website – http://www.advancedpower.com
APTGF200U60D4
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.17
0.29
°C/W
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
V
150
125
125
5
2
420
°C
Operating Case Temperature
M6
M4
Torque Mounting torque
Wt Package Weight
N.m
g
1
Package outline (dimensions in mm)
3 - 5
APT website – http://www.advancedpower.com
APTGF200U60D4
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
TJ = 125°C
VGE=15V
TJ=25°C
VGE=20V
VGE=12V
TJ=125°C
VGE=9V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
400
350
300
250
200
150
100
50
15
12.5
10
TJ=25°C
VCE = 300V
VGE = 15V
RG = 1.5Ω
TJ = 125°C
Eon
Eoff
7.5
5
Er
TJ=125°C
TJ=25°C
2.5
0
0
0
50 100 150 200 250 300 350 400
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
16
500
400
300
200
100
0
VCE = 300V
Eon
VGE =15V
12
8
IC = 200A
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=1.5Ω
4
0
0
100
200
300
400
500
600
0
2
4
6
8
10
12
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
IGBT
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGF200U60D4
Operating Frequency vs Collector Current
Forward Characteristic of diode
100
80
60
40
20
0
400
350
300
250
200
150
100
50
VCE=300V
D=50%
RG=1.5Ω
ZCS
TJ=125°C
TC=75°C
ZVS
TJ=125°C
TJ=25°C
hard
switching
0
0
50
100 150 200 250 300
0
0.2 0.4 0.6 0.8
F (V)
1
1.2 1.4 1.6
V
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
0.9
0.7
Diode
0.25
0.2
0.15
0.1
0.05
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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