APTGF200U120DG [MICROSEMI]
Single Switch with Series diodes NPT IGBT Power Module; 单开关与二极管系列NPT IGBT功率模块
| 型号： | APTGF200U120DG |
| 厂家： | 
Microsemi |
| 描述： | Single Switch with Series diodes NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF200U120DG
Single Switch
with Series diodes
VCES = 1200V
IC = 200A @ Tc = 80°C
NPT IGBT Power Module
Application
EK
•
Zero Current Switching resonant mode
E
C
Features
•
Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
G
CK
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
E
C
CK
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
EK
G
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
275
V
Tc = 25°C
IC
Continuous Collector Current
A
Tc = 80°C
Tc = 25°C
200
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
600
±20
1136
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 400A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 6
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APTGF200U120DG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
500
750
3.7
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
3.2
4.0
VGE =15V
IC = 200A
VGE = VCE, IC = 4mA
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
V
4.5
6.5
±300 nA
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
13.8
nF
Output Capacitance
1.32
0.88
1320
140
800
35
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 200A
nC
Inductive Switching (125°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
65
ns
VBus = 600V
320
IC = 200A
30
35
65
360
40
RG = 1.2Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 600V
IC = 200A
Tf
Fall Time
RG = 1.2Ω
VGE = 15V
Tj = 125°C
VBus = 600V
Eon
Turn-on Switching Energy
22
mJ
IC = 200A
Tj = 125°C
RG = 1.2Ω
Eoff
Turn-off Switching Energy
12.2
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
Tj = 25°C
Tj = 125°C
750
1000
IRM
Maximum Reverse Leakage Current
VR=1200V
µA
IF
DC Forward Current
Tc = 70°C
IF = 240A
240
2
2.3
1.8
A
V
2.5
IF = 480A
VF
Diode Forward Voltage
IF = 240A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
470
4.8
16
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 240A
VR = 800V
di/dt =800A/µs
Qrr
µC
2 – 6
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APTGF200U120DG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.11
0.23
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
3 – 6
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APTGF200U120DG
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
200
150
100
50
800
600
400
200
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
0
0
1
2
3
4
0
2
4
6
8
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
18
16
14
12
10
8
6
4
2
0
1200
1000
800
600
400
200
0
VCE=240V
VCE=600V
IC = 200A
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
VCE=960V
TJ=125°C
TJ=25°C
0
200 400 600 800 1000 1200 1400
0
4
8
12
16
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
250µs Pulse Test
Ic=400A
TJ = 25°C
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
Ic=400A
Ic=200A
Ic=200A
Ic=100A
Ic=100A
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
350
300
250
200
150
100
50
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
-50 -25
0
25
50
75 100 125
-25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 – 6
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APTGF200U120DG
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
45
40
35
30
25
400
350
300
250
200
VCE = 600V
RG = 1.2Ω
VGE=15V,
TJ=125°C
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
RG = 1.2Ω
0
100
200
300
400
500
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
140
100
60
50
40
30
20
VCE = 600V
RG = 1.2Ω
TJ = 125°C
TJ = 25°C
VGE=15V
VCE = 600V, VGE = 15V, RG = 1.2Ω
20
0
100
200
300
400
500
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
80
60
40
20
0
32
VCE = 600V
RG = 1.2Ω
VCE = 600V
VGE = 15V
TJ = 125°C
24
16
8
RG = 1.2Ω
TJ=125°C,
VGE=15V
0
0
100
200
300
400
500
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Capacitance vs Collector to Emitter Voltage
Switching Energy Losses vs Gate Resistance
56
48
40
32
24
16
8
100000
10000
1000
VCE = 600V
Eon, 200A
V
GE = 15V
TJ= 125°C
Cies
Eoff, 200A
Coes
Cres
Eon, 100A
Eoff, 100A
7.5
100
0
0
10
20
30
40
50
0
2.5
5
10
12.5
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
5 – 6
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APTGF200U120DG
Reverse Bias Safe Operating Area
Operating Frequency vs Collector Current
450
400
350
300
250
200
150
100
50
120
VCE = 600V
D = 50%
100
80
60
40
20
0
RG = 1.2Ω
TJ = 125°C
TC= 75°C
ZVS
ZCS
100
Hard
switching
0
20
60
140
180
220
0
400
800
1200
IC, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
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