APTGF180SK60TG [MICROSEMI]
Buck chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF180SK60TG |
| 厂家： | 
Microsemi |
| 描述： | Buck chopper NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF180SK60TG
VCES = 600V
IC = 180A @ Tc = 80°C
NPT IGBT Power Module
Application
•
•
AC and DC motor control
Switched Mode Power Supplies
VBUS
NTC2
Q1
Features
G1
E1
•
Non Punch Through (NPT) Fast IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
OUT
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS SENSE
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
0/VBUS
NT C1
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
Outstanding performance at high frequency
operation
0/VBUS
OUT
SENSE
•
•
•
•
•
Stable temperature behavior
Very rugged
OUT
VBUS
0/VBUS
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
E1
NTC2
NTC1
0/VBUS
SENSE
G1
•
•
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
220
180
630
±20
833
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
400A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 6
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APTGF180SK60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
300
ICES
Zero Gate Voltage Collector Current
µA
VCE = 600V
1000
2.0
2.2
2.5
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
V
IC = 180A
Tj = 125°C
VGE = VCE, IC = 2mA
VGE = 20 V, VCE = 0V
3
5
IGES
Gate – Emitter Leakage Current
±200 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
8.6
nF
Output Capacitance
0.94
0.8
660
580
400
26
Reverse Transfer Capacitance
Total gate Charge
VGS = 15V
VBus = 300V
IC = 180A
nC
Qge
Qgc
Gate – Emitter Charge
Gate – Collector Charge
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
25
150
ns
VBus = 400V
IC = 180A
30
26
RG = 2.5 Ω
Inductive Switching (125°C)
VGE = 15V
25
170
ns
VBus = 400V
IC = 180A
Tf
Fall Time
40
RG = 2.5 Ω
VGE = 15V
Tj = 125°C
VBus = 400V
Eon
Turn-on Switching Energy
8.6
7
mJ
IC = 180A
Tj = 125°C
RG = 2.5 Ω
Eoff
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
VR=600V
350
750
Tj = 125°C
Tc = 80°C
IF = 200A
200
1.6
1.9
1.4
180
220
1.8
VF
Diode Forward Voltage
IF = 400A
V
IF = 200A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 200A
VR = 400V
di/dt =400A/µs
780
2900
Qrr
nC
2 - 6
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APTGF180SK60TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.15
0.32
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGF180SK60TG
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
600
500
400
300
200
100
0
600
500
400
300
200
100
0
250µs Pulse Test
< 0.5% Duty cycle
TJ=-55°C
250µs Pulse Test
TJ=25°C
TJ=-55°C
< 0.5% Duty cycle
TJ=25°C
TJ=125°C
TJ=125°C
3
0
1
2
3
4
0
1
2
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
600
500
400
300
200
100
0
18
16
14
12
10
8
6
4
2
0
VCE=120V
IC = 180A
250µs Pulse Test
< 0.5% Duty cycle
T
J = 25°C
VCE =300V
VCE =480V
TJ=125°C
TJ=25°C
TJ=-55°C
0
100 200 300 400 500 600 700
0
1
2
3
4
5
6
7
8
9
10
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
8
7
6
5
4
3
2
1
0
4
3.5
3
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=360A
2.5
2
Ic=180A
Ic=90A
1.5
1
Ic=90A
250µs Pulse Test
< 0.5% Duty cycle
0.5
0
V
GE = 15V
6
8
10
12
14
16
-50 -25
0
25
50
75 100 125
V
GE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
300
250
200
150
100
50
1.20
1.10
1.00
0.90
0.80
0.70
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
4 - 6
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APTGF180SK60TG
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
35
30
25
20
15
250
200
150
100
50
VGE=15V,
TJ=125°C
VGE = 15V
VGE=15V,
TJ=25°C
Tj = 25°C
VCE = 400V
VCE = 400V
RG = 2.5Ω
RG = 2.5Ω
50
100
150
200
250
300
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
80
60
40
20
0
80
60
40
20
0
VCE = 400V
RG = 2.5Ω
VCE = 400V, VGE = 15V, RG = 2.5Ω
VGE=15V,
TJ=125°C
TJ = 125°C
TJ = 25°C
50
100
150
200
250
300
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
16
12
10
8
VCE = 400V
TJ = 125°C
VGE = 15V
VCE = 400V
RG = 2.5Ω
TJ=125°C,
VGE=15V
RG = 2.5Ω
12
TJ = 25°C
6
8
4
0
TJ=25°C,
VGE=15V
4
2
0
50
100
150
200
250
300
50
100
150
200
250
300
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
32
24
16
8
20
16
12
8
VCE = 400V
VGE = 15V
TJ= 125°C
VCE = 400V
Eon, 360A
Eon, 360A
Eoff, 360A
V
GE = 15V
G = 2.5Ω
Eoff, 360A
R
Eoff, 180A
Eon, 180A
Eoff, 90A
Eon, 180A
Eoff, 180A
Eon, 90A
4
Eon, 90A
20
Eoff, 90A
25
0
0
0
5
10
15
25
0
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 6
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APTGF180SK60TG
Capacitance vs Collector to Emitter Voltage
100000
Reverse Bias Safe Operating Area
450
400
350
300
250
200
150
100
50
Cies
10000
1000
100
Coes
Cres
0
0
10
20
30
40
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
180
150
120
90
VCE = 400V
D = 50%
RG = 2.5Ω
TJ = 125°C
Tc=75°C
ZCS
60
ZVS
30
Hard
switching
0
40
80
120
160
200
240
IC, Collector Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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