APTGF200U120D [ADPOW]
Single Switch with Series diodes NPT IGBT Power Module; 单开关与二极管系列NPT IGBT功率模块
| 型号： | APTGF200U120D |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Single Switch with Series diodes NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF200U120D
Single Switch
with Series diodes
VCES = 1200V
IC = 200A @ Tc = 80°C
NPT IGBT Power Module
Application
EK
•
Zero Current Switching resonant mode
E
C
Features
•
Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
G
CK
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
E
C
CK
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
Stable temperature behavior
Very rugged
EK
G
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
275
V
Tc = 25°C
IC
Continuous Collector Current
A
Tc = 80°C
Tc = 25°C
200
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
600
±20
1136
V
W
Tc = 25°C
SSOA
Switching Safe Operating Area
Tj = 150°C 600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTGF200U120D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1.5mA
1200
V
Tj = 25°C
1.5
VGE = 0V
ICES
Zero Gate Voltage Collector Current
mA
VCE = 1200V
Tj = 125°C
Tj = 25°C
Tj = 125°C
7.0
3.2
4.0
3.7
6.5
VGE =15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
V
IC = 200A
VGE = VCE, IC = 4mA
VGE = ±20V, VCE = 0V
4.5
IGES
Gate – Emitter Leakage Current
±300 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
13.8
nF
Output Capacitance
1.32
880
1320
140
800
35
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 200A
nC
Inductive Switching (125°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
65
VBus = 600V
Td(off) Turn-off Delay Time
320
30
21.6
9.2
IC = 200A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
RG = 1.2Ω
Inductive Switching (125°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
35
65
360
40
27.9
ns
VBus = 600V
IC = 200A
RG = 1.2Ω
Tf
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Eon
Eoff
mJ
12.2
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
1200
Maximum Average Forward Current
50% duty cycle
IF = 240A
Tc = 70°C
240
2
2.3
1.8
A
V
2.5
IF = 480A
VF
Diode Forward Voltage
IF = 240A
IF = 240A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
400
470
4.8
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 800V
di/dt =800A/µs
IF = 240A
Qrr
µC
VR = 800V
di/dt =800A/µs
Tj = 125°C
16
2 – 6
APT website – http://www.advancedpower.com
APTGF200U120D
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.11
0.23
RthJC
Junction to Case
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTGF200U120D
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
800
600
400
200
0
200
150
100
50
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
0
0
2
4
6
8
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
1200
1000
800
600
400
200
0
18
16
14
12
10
8
6
4
2
0
VCE=240V
250µs Pulse Test
< 0.5% Duty cycle
IC = 200A
TJ = 25°C
VCE=600V
VCE =960V
TJ=125°C
TJ=25°C
0
200 400 600 800 1000 1200 1400
0
4
8
12
16
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
250µs Pulse Test
Ic=400A
TJ = 25°C
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
Ic=400A
Ic=200A
Ic=200A
Ic=100A
Ic=100A
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
350
300
250
200
150
100
50
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTGF200U120D
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
45
40
35
30
25
400
350
300
250
200
VCE = 600V
VGE=15V,
TJ=125°C
RG = 1.2Ω
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
R
G = 1.2Ω
0
100
200
300
400
500
0
100
200
300
400
500
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
140
100
60
50
40
30
20
VCE = 600V
R
G = 1.2Ω
TJ = 125°C
VGE=15V
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 1.2Ω
20
0
100
200
300
400
500
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
120
32
VCE = 600V
TJ=125°C,
VCE = 600V
GE = 15V
G = 1.2Ω
TJ = 125°C
100
80
60
40
20
0
R
G = 1.2Ω
V
R
VGE=15V
24
16
8
TJ = 25°C
TJ=25°C,
VGE=15V
0
0
100
200
300
400
500
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
32
72
VCE = 600V
Eon, 200A
VCE = 600V
VGE = 15V
TJ= 125°C
64
56
48
40
32
24
16
8
Eon, 200A
VGE = 15V
RG = 1.2Ω
24
16
8
Eoff, 200A
Eoff, 200A
Eon, 100A
Eon, 100A
Eoff, 100A
Eoff, 100A
7.5
0
0
0
2.5
5
10
12.5
0
25
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 – 6
APT website – http://www.advancedpower.com
APTGF200U120D
Capacitance vs Collector to Emitter Voltage
100000
Minimum Switching Safe Operating Area
700
600
500
400
300
200
100
0
Cies
10000
1000
100
Coes
Cres
0
10
20
30
40
50
0
400
800
1200
V
CE, Collector to Emitter Voltage (V)
V
CE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
VCE = 600V
D = 50%
RG = 1.2Ω
TJ = 125°C
TC = 75°C
100
80
60
40
20
0
ZCS
Hard
switching
20
60
100
140
180
220
IC, Collector Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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