APTGF200SK120D3G [MICROSEMI]
Buck Chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF200SK120D3G |
| 厂家： | 
Microsemi |
| 描述： | Buck Chopper NPT IGBT Power Module |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF200SK120D3G
Buck Chopper
NPT IGBT Power Module
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
3
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
4
Features
5
•
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
1
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
2
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
•
•
•
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
300
200
400
±20
1400
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
400A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
www.microsemi.com
APTGF200SK120D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
3.2
3.9
5.8
3.7
V
GE = 15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 8 mA
VGE = 20V, VCE = 0V
5.2
6.4
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
V
GE = 0V, VCE = 25V
13
1
nF
f = 1MHz
VGE=±15V, IC=200A
VCE=600V
QG
Gate charge
2.1
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
100
60
V
GE = ±15V
ns
VBus = 600V
IC = 200A
RG = 4.7Ω
Td(off) Turn-off Delay Time
530
Tf
Fall Time
30
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
110
70
V
GE = ±15V
ns
VBus = 600V
IC = 200A
RG = 4.7Ω
Td(off) Turn-off Delay Time
550
40
Tf
Fall Time
V
GE = ±15V
Eon
Turn On Energy
Tj = 125°C
Tj = 125°C
19
15
VBus = 600V
IC = 200A
RG = 4.7Ω
mJ
A
Eoff
Isc
Turn Off Energy
Short Circuit data
V
GE ≤15V ; VBus = 900V
1300
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VRRM
1200
V
Tj = 25°C
750
IRRM
VR=1200V
IF = 200A
µA
Tj = 125°C
1000
IF
DC Forward Current
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
200
2.1
1.9
A
V
VF
Diode Forward Voltage
100
trr
Reverse Recovery Time
ns
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
200
14
IF = 200A
VR = 600V
di/dt =3000A/µs
Qrr
Err
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
40
5.2
11.2
2 - 5
www.microsemi.com
APTGF200SK120D3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.09
0.16
°C/W
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
V
150
125
125
5
5
350
°C
Operating Case Temperature
For terminals
To Heatsink
M6
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
3 - 5
www.microsemi.com
APTGF200SK120D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
400
300
200
100
0
TJ = 125°C
VGE=15V
VGE=20V
TJ=25°C
300
200
100
0
VGE=12V
VGE=9V
TJ=125°C
0
1
2
3
4
5
6
0
1
2
3
CE (V)
4
5
6
VCE (V)
V
Energy losses vs Collector Current
Transfert Characteristics
400
300
200
100
0
60
50
40
30
20
10
0
VCE = 600V
VGE = 15V
RG = 4.7 Ω
TJ = 125°C
Eon
TJ=125°C
Eoff
TJ=25°C
Err
0
100
200
300
400
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
100
500
VCE = 600V
VGE =15V
IC = 200A
TJ = 125°C
Eon
80
60
40
20
0
400
300
200
100
0
Eoff
VGE=15V
TJ=125°C
RG=4.7 Ω
Err
0
300
600
900
CE (V)
1200
1500
0
5
10
15
20
25
30
35
Gate Resistance (ohms)
V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.08
0.06
0.04
0.02
0
IGBT
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
www.microsemi.com
APTGF200SK120D3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
400
70
60
50
40
30
20
10
0
VCE=600V
D=50%
RG=4.7 Ω
300
TJ=125°C
ZVS
TJ=125°C
TC=75°C
200
ZCS
TJ=25°C
100
hard
switching
0
0
0.5
1
1.5
2
2.5
3
0
50
100
IC (A)
150
200
250
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
Diode
0.9
0.7
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
www.microsemi.com
相关型号：
APTGF20X60BTP2
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24
MICROSEMI
APTGF20X60BTP2G
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24
MICROSEMI
APTGF20X60RTP2G
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24
MICROSEMI
©2020 ICPDF网 联系我们和版权申明