SI4947ADY-T1 [VISHAY]
Dual P-Channel 30-V (D-S) MOSFET; 双P通道30 - V（D -S）的MOSFET
| 型号： | SI4947ADY-T1 |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4947ADY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.080 @ V = -10 V
-3.9
-3.0
GS
-30
0.135 @ V = -4.5
GS
V
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View
D
1
D
2
Ordering Information: Si4947ADY
Si4947ADY-T1 (with Tape and Reel)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-30
DS
V
V
GS
"20
T
= 25_C
= 70_C
-3.0
-2.4
-3.9
-3.1
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-20
DM
a
continuous Source Current (Diode Conduction)
I
-1.7
2.0
-1.0
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.76
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
54
87
34
62.5
105
45
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
Si4947ADY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-1.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= -30 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -30 V, V = 0 V, T = 70_C
-10
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -10 V
-15
A
D(on)
GS
V
= -10 V, I = -3.9 A
0.062
0.105
0.080
0.135
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -4.5 V, I = -3.0 A
D
GS
a
Forward Transconductance
g
5.0
S
V
V
= -15 V, I = -2.5 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
= -1.7 A, V = 0 V
-0.82
-1.2
8
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
5.8
2
g
Q
Q
V
= -10 V, V = -5 V, I = -3.9 A
nC
ns
gs
gd
DS
GS
D
1.9
8
t
15
18
40
20
40
d(on)
t
9
r
V
= -10 V, R = 10 W
L
GEN G
DD
I
^ -1 A, V
= -10 V, R = 6 W
D
Turn-Off Delay Time
Fall Time
t
21
10
27
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = -1.7 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
T
= -55_C
V
GS
= 10 thru 6 V
C
16
12
8
25_C
5 V
125_C
4 V
3 V
4
4
2 V
0
0
0
2
4
6
8
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
www.vishay.com
2
Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.30
0.24
0.18
C
iss
V
GS
= 4.5 V
0.12
0.06
0.00
V
GS
= 10 V
C
oss
C
rss
0
3
6
9
12
15
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 10 V
DS
GS
I
= 3.9 A
I = 3.9 A
D
6
4
2
0
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
0.32
0.24
0.16
0.08
0.00
30
10
T
= 150_C
J
I
D
= 3.9 A
T
= 25_C
J
1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
www.vishay.com
3
Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.8
30
24
18
0.6
I
D
= 250 mA
0.4
0.2
12
6
0.0
-0.2
-0.4
0
10
-2
-1
-50
-25
0
25
50
75
100 125 150
10
1
10
100
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 87_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
10
0.01
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
www.vishay.com
4
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