SI4362BDY-T1-GE3 [VISHAY]
Power Field-Effect Transistor,;
| 型号： | SI4362BDY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4362BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
19.8
Available
0.0046 at VGS = 10 V
0.0054 at VGS = 4.5 V
•
•
TrenchFET® Power MOSFET
Optimized for "Low Side" Synchronous
Rectifier Operation
30
36 nC
18.2
•
100 % Rg Tested
APPLICATIONS
•
DC/DC Converters
SO-8
D
•
Synchronous Rectifiers
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4362BDY-T1-E3 (Lead-(Pb)-free)
Si4362BDY-T1-GE3 (Lead-(Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
TC = 25 °C
TC = 70 °C
29
23
Continuous Drain Current (TJ = 150 °C)
ID
19.8b, c
TA = 25 °C
15.8b, c
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
60
6
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
2.7b, c
6.6
T
C = 25 °C
TC = 70 °C
A = 25 °C
4.2
PD
Maximum Power Dissipation
W
3.0b, c
T
2b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
RthJA
t ≤ 10 s
34
15
41
19
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
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1
Si4362BDY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 1 mA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
31.4
- 4.9
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.6
30
2.0
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
VGS = 10 V, ID = 19.8 A
0.0038
0.0043
120
0.0046
0.0054
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
V
GS = 4.5 V, ID = 18.2 A
VDS = 15 V, ID = 19.8 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4800
500
200
75
36
9
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 19.8 A
pF
115
54
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = 15 V, VGS = 4.5 V, ID = 19.8 A
f = 1 MHz
Gate-Drain Charge
6.5
1.05
26
11
41
7
Gate Resistance
1.6
40
20
65
15
20
15
70
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
12
10
47
8
Rise Time
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = 5 A
6
A
60
1.1
60
60
0.7
35
30
18
17
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
8
V
= 5 V thru 10 V
GS
50
40
30
20
10
0
I
D
= 25 °C
6
V
= 4 V
GS
4
I
D
= 125 °C
V
= 3 V
GS
V
GS
= 2 V
2
I
D
= - 55 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
- Gate-to-Source Voltage (V)
GS
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
Output Characteristics
Transfer Characteristics
6000
5000
4000
3000
2000
1000
0
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 19.8 A
I
D
= 19.8 A
V
DS
= 15 V
V
GS
= 10 V , 4.5 V
6
V
DS
= 20 V
4
2
0
0
12
24
36
48
60
72
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
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3
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
100
I
= 19.8 A
D
T
= 150 °C
J
T
= 25 °C
J
T
J
= 125 °C
10
T
J
= 25 °C
1
0.0
1
3
5
7
9
0.2
V
0.4
0.6
0.8
1.0
V
GS
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.6
1.4
1.2
1.0
0.8
0.6
200
160
120
I
D
= 250 µA
80
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
Limited by R
10
DS(on)*
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
>
* V
GS
minimum V at which R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
8
7
6
5
4
3
2
1
0
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
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5
Si4362BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
0.02
2
2.Per Unit Base = R
= 67 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73539.
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Document Number: 73539
S09-0226-Rev. B, 09-Feb-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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