SI4366DY [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4366DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4366DY
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D Optimized for “Low Side” Synchronous
Rectifier Operation
VDS (V)
rDS(on) (W)
ID (A)
D 100% RG Tested
APPLICATIONS
0.0048 @ V = 10 V
20
19
GS
30
0.0055 @ V = 4.5 V
GS
D DC/DC Converters
D Synchronous Rectifiers
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"12
T
= 25_C
= 70_C
20
15
13
10
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
2.9
3.5
2.2
1.3
1.6
1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
29
67
13
35
80
16
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71852
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2-1
Si4366DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
2.0
V
GS(th)
DS
GS D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0037
0.0048
0.0055
V
= 10 V, I = 20 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 19 A
0.0042
110
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 2.9 A, V = 0 V
0.70
1.1
65
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
48
17
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 20 A
nC
DS
GS
D
10
R
G
0.5
1.3
22
2.2
35
W
t
t
d(on)
t
r
15
25
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
190
45
290
65
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 3 V
GS
50
40
30
20
10
0
T
C
= 125_C
25_C
-55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 71852
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2-2
Si4366DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
10000
8000
6000
4000
2000
0
C
iss
0.008
0.006
V
= 4.5 V
GS
0.004
0.002
0.000
V
= 10 V
GS
C
rss
C
oss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 20 A
V
= 10 V
GS
DS
I
D
I = 20 A
D
0
14
28
42
56
70
-50
-25
0
J
25
50
75
100 125 150
T
- Junction Temperature (_C)
Q
- Total Gate Charge (nC)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
0.004
0.000
50
T
J
= 150_C
10
T
J
= 25_C
I
D
= 20 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 71852
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2-3
Si4366DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
60
50
I
D
= 250 mA
0.4
0.2
40
30
-0.0
-0.2
-0.4
-0.6
-0.8
20
10
0
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71852
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2-4
相关型号：
SI4368DY-T1-GE3
Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4370DY-T1
TRANSISTOR 5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明