SI4368DY [VISHAY]
N-Channel Reduced Qg, Fast Switching WFET; N沟道减少的Qg ，快速开关WFET
| 型号： | SI4368DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Reduced Qg, Fast Switching WFET |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4368DY
Vishay Siliconix
New Product
N-Channel Reduced Qg, Fast Switching WFETt
FEATURES
PRODUCT SUMMARY
D Extremely Low Qgd WFET Technology for
Switching Losses Improvement
D TrenchFETr Gen II Power MOSFET
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
0.0032 @ V = 10 V
25
22
GS
30
0.0036 @ V = 4.5 V
GS
APPLICATIONS
D Low-Side DC/DC Conversion
− Notebook, Server, VRM Module
D Fixed Telecom
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4368DY—E3
Si4368DY-T1—E3 (Lead Free with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"12
T
= 25_C
= 70_C
25
20
17
13
A
a
Continuous Drain Current (T = 150__C)
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanch Current
I
70
50
A
DM
a
I
S
2.9
1.3
L= 0.1 mH
i
AS
T
= 25_C
= 70_C
3.5
2.2
1.6
1
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
29
67
13
35
80
16
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
1
Si4368DY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
1.8
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "12 V
GS
I
nA
DS
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0026
0.0032
0.0036
V
= 10 V, I = 25 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 22 A
0.0029
150
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 25 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 2.9 A, V = 0 V
0.66
1.1
SD
GS
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
C
8340
850
355
53
iss
C
oss
V
V
= 15 V, V = 0 V, f = 1 MHz
pF
DS
GS
C
rss
Q
80
g
Q
17.5
6.5
1.2
25
= 15 V, V
4.5 V, I = 20 A
nC
gs
gd
DS
GS =
D
Q
R
f = 1 MHz
0.8
1.8
38
W
g
Turn-On Delay Time
Rise Time
t
d(on)
t
20
30
r
V
= 15 V, R = 15 W
L
GEN g
DD
^ 1 A, V
I
D
= 10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
172
41
260
62
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
42
60
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 3 V
GS
50
40
30
20
10
0
T
C
= 125_C
25_C
2 V
−55_C
0
1
2
3
4
5
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
V
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
DS
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
2
Si4368DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.005
10000
8000
6000
4000
2000
0
C
iss
0.004
V
= 4.5 V
GS
0.003
0.002
0.001
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
GS
DS
I
= 20 A
I = 25 A
D
0
15
30
45
60
75
−50 −25
0
25
50
75
100 125 150
T
J
− Junction Temperature (_C)
Q
g
− Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
0.004
0.002
0.000
60
10
1
T = 150_C
J
I
D
= 25 A
T = 25_C
J
0.1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
3
Si4368DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
50
I
D
= 250 mA
0.2
−0.0
−0.2
−0.4
−0.6
−0.8
40
30
20
10
0
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
− Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by r
DS(on)
10
10 ms
100 ms
1
1 s
10 s
0.1
T
= 25_C
C
dc
Single Pulse
0.01
0.1001
0.1
1
10
100
V
− Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
10
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
4
Si4368DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
5
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