SI4362DY-T1-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SI4362DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
PRODUCT SUMMARY
Rectifier Operation
D 100% Rg Tested
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.0045 @ V = 10 V
20
19
GS
30
0.0055 @ V = 4.5 V
GS
D DC/DC Converters
D Synchronous Rectifiers
SO-8
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
S
N-Channel MOSFET
a
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
30
"12
20
DS
GS
T
= 25_C
= 70_C
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
15
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
S
2.9
T
= 25_C
= 70_C
3.5
A
a
Maximum Power Dissipation
P
W
D
T
A
2.2
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
stg
a
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
R
29
13
35
16
thJA
thJF
C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS D
V
= 0 V, V = "12 V
GS
I
"100
nA
DS
GSS
V
= 30 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 55_C
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0035
0.0045
0.0055
V
= 10 V, I = 20 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 19 A
0.0042
90
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 2.9 A, V = 0 V
0.75
1.1
55
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
42
12.8
7.7
1.3
17
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 20 A
nC
DS
GS
D
R
G
0.5
2.2
30
W
t
t
d(on)
t
r
14
25
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN g
Turn-Off Delay Time
Fall Time
158
43
230
65
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 3 V
GS
50
40
30
20
10
0
T
C
= 125_C
2 V
25_C
−55_C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
DS
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
2
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
8000
6000
4000
2000
0
0.008
0.006
C
iss
V
= 4.5 V
GS
0.004
0.002
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
GS
DS
I
= 20 A
I = 20 A
D
0
10
20
30
40
50
−50 −25
0
25
50
75
100 125 150
T
J
− Junction Temperature (_C)
Q
g
− Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.025
0.020
0.015
0.010
0.005
0.000
50
T = 150_C
J
10
T = 25_C
J
I
D
= 20 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
3
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
50
I
D
= 250 mA
0.2
−0.0
−0.2
−0.4
−0.6
−0.8
40
30
20
10
0
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
− Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
10
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4368DY-T1-GE3
Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4370DY-T1
TRANSISTOR 5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明