首页 |元器件品牌

SI4364DY-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SI4364DY-E3
型号： SI4364DY-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件： 总5页 (文件大小：64K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Si4364DY  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Optimized for “Low Side” Synchronous  
Rectifier Operation  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 100% RG Tested  
APPLICATIONS  
0.0045 @ V = 10 V  
20  
19  
GS  
30  
0.0055 @ V = 4.5 V  
GS  
D DC/DC Converters  
D Synchronous Rectifiers  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"16  
T
= 25_C  
= 70_C  
20  
15  
13  
10  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.9  
3.5  
2.2  
1.3  
1.6  
1
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
29  
67  
13  
35  
80  
16  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 70680  
S-03662—Rev. C, 14-Apr-03  
www.vishay.com  
2-1  
Si4364DY  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
0.8  
1.8  
V
GS(th)  
DS  
GS D  
I
V
= 0 V, V = "16 V  
"100  
nA  
GSS  
DS  
GS  
V
= 24 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0035  
0.0045  
0.0055  
V
= 10 V, I = 20 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 19 A  
0.0043  
90  
GS  
DS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 20 A  
S
V
D
a
Diode Forward Voltage  
V
I
S
= 2.9 A, V = 0 V  
0.70  
1.1  
75  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
48  
16  
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 20 A  
nC  
DS  
GS  
D
11  
R
G
0.5  
1.1  
17  
1.9  
30  
W
t
t
d(on)  
t
r
16  
30  
V
= 15 V, R = 15 W  
L
= 4.5 V, R = 6 W  
GEN G  
DD  
I
D
^ 1 A, V  
Turn-Off Delay Time  
Fall Time  
165  
55  
250  
90  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.9 A, di/dt = 100 A/ms  
40  
80  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
= 10 thru 3 V  
GS  
50  
40  
30  
20  
10  
0
T
C
= 125_C  
25_C  
2 V  
-55_C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 70680  
S-03662—Rev. C, 14-Apr-03  
www.vishay.com  
2-2  
Si4364DY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.010  
9000  
7200  
5400  
3600  
1800  
0
C
iss  
0.008  
0.006  
V
= 4.5 V  
GS  
0.004  
0.002  
0.000  
V
= 10 V  
GS  
C
rss  
C
oss  
0
10  
20  
30  
40  
50  
0
6
12  
18  
24  
30  
I
D
- Drain Current (A)  
V
- Drain-to-Source Voltage (V)  
DS  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 20 A  
V
= 10 V  
GS  
DS  
I
D
I = 20 A  
D
0
14  
28  
42  
56  
70  
-50  
-25  
0
J
25  
50  
75  
100 125 150  
T
- Junction Temperature (_C)  
Q
- Total Gate Charge (nC)  
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
50  
T = 150_C  
J
10  
T = 25_C  
J
I
D
= 20 A  
1
0.00  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 70680  
S-03662—Rev. C, 14-Apr-03  
www.vishay.com  
2-3  
Si4364DY  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.4  
60  
50  
I
D
= 250 mA  
0.2  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
40  
30  
20  
10  
0
-2  
-1  
-50  
-25  
0
25  
50  
75  
100 125 150  
10  
10  
1
10  
100  
600  
T
J
- Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 67_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
10  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 70680  
S-03662—Rev. C, 14-Apr-03  
www.vishay.com  
2-4  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号：

SI4364DY-T1-GE3

 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
VISHAY

SI4366DY

 N-Channel 30-V (D-S) MOSFET
VISHAY

SI4366DY-E3

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

SI4368DY

 N-Channel Reduced Qg, Fast Switching WFET
VISHAY

SI4368DY-E3

 N-Channel Reduced Qg, Fast Switching WFET
VISHAY

SI4368DY-T1-E3

 N-Channel Reduced Qg, Fast Switching WFET
VISHAY

SI4368DY-T1-GE3

 Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY

SI4370DY

 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY

SI4370DY-T1

 TRANSISTOR 5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
VISHAY

SI4376DY

 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY

SI4376DY-T1

 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY

SI4378DY

 N-Channel 20-V (D-S) MOSFET
VISHAY
©2020 ICPDF网 联系我们和版权申明