SI4364DY-T1-GE3 [VISHAY]
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal;
| 型号： | SI4364DY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal 光电二极管 |
| 文件： | 总5页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4364DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
20
Available
TrenchFET® Power MOSFET
Optimized for “Low Side” Synchronous
Rectifier Operation
0.0045 at VGS = 10 V
0.0055 at VGS = 4.5 V
•
•
30
19
•
100 % Rg Tested
APPLICATIONS
•
DC/DC Converters
SO-8
•
Synchronous Rectifiers
D
S
S
S
G
1
8
7
6
5
D
D
2
3
4
D
D
G
Top View
S
N-Channel MOSFET
Ordering Information:
Si4364DY-T1-E3 (Lead (Pb)-free)
Si4364DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
30
16
V
VGS
TA = 25 °C
TA = 70 °C
20
15
13
10
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
60
2.9
3.5
2.2
1.3
1.6
1
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
W
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
29
Maximum
Unit
t ≤ 10 s
35
80
16
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
67
°C/W
RthJF
13
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 70680
S09-0221-Rev. E, 09-Feb-09
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1
Si4364DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
0.8
1.8
100
1
V
VDS = 0 V, VGS
=
16 V
Gate-Body Leakage
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
30
VGS = 10 V, ID = 20 A
0.0035
0.0043
90
0.0045
0.0055
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 4.5 V, ID = 19 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 20 A
IS = 2.9 A, VGS = 0 V
S
V
VSD
0.70
1.1
75
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
48
16
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
nC
11
0.5
1.1
17
1.9
30
Ω
td(on)
tr
td(off)
tf
16
30
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
165
55
250
90
ns
Source-Drain Reverse Recovery
Time
trr
IF = 2.9 A, dI/dt = 100 A/µs
40
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 3 V
GS
T
= 125 °C
C
25 °C
2 V
- 55 °C
2.5
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
3.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
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Document Number: 70680
S09-0221-Rev. E, 09-Feb-09
Si4364DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
9000
7200
5400
3600
1800
0
0.010
C
iss
0.008
0.006
V
= 4.5 V
GS
0.004
0.002
0.000
V
= 10 V
GS
C
oss
C
rss
0
6
12
18
24
30
0
10
20
30
40
50
V
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
DS
On-Resistance vs. Drain Current
Capacitance
6
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 20 A
GS
V
= 15 V
= 20 A
DS
I
D
5
4
3
2
1
0
I
D
0
14
28
42
56
7
0
- 50 - 25
0
25
50
75
100 125 150
Q - Total Gate Charge (nC)
g
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.025
0.020
0.015
0.010
0.005
0.000
50
T = 150 °C
J
10
T = 25 °C
J
I
D
= 20 A
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 70680
S09-0221-Rev. E, 09-Feb-09
www.vishay.com
3
Si4364DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
60
50
I
= 250 µA
D
0.2
0.0
40
30
- 0.2
- 0.4
- 0.6
- 0.8
20
10
0
10
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
1
10
100
600
T
- Temperature (°C)
Time (s)
J
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 67 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70680.
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4
Document Number: 70680
S09-0221-Rev. E, 09-Feb-09
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
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