SI4362DY [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4362DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
PRODUCT SUMMARY
Rectifier Operation
D 100% Rg Tested
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.0045 @ V = 10 V
20
19
GS
30
0.0055 @ V = 4.5 V
GS
D DC/DC Converters
D Synchronous Rectifiers
SO-8
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
S
N-Channel MOSFET
a
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
30
"12
20
DS
GS
T
= 25_C
= 70_C
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
15
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
S
2.9
T
= 25_C
= 70_C
3.5
A
a
Maximum Power Dissipation
P
W
D
T
A
2.2
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
stg
a
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
R
29
13
35
16
thJA
thJF
C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS D
V
= 0 V, V = "12 V
GS
I
"100
nA
DS
GSS
V
= 30 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 55_C
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0035
0.0045
0.0055
V
= 10 V, I = 20 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 19 A
0.0042
90
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 2.9 A, V = 0 V
0.75
1.1
55
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
42
12.8
7.7
1.3
17
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 20 A
nC
DS
GS
D
R
G
0.5
2.2
30
W
t
t
d(on)
t
r
14
25
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN g
Turn-Off Delay Time
Fall Time
158
43
230
65
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 3 V
GS
50
40
30
20
10
0
T
C
= 125_C
2 V
25_C
−55_C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
DS
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
2
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
8000
6000
4000
2000
0
0.008
0.006
C
iss
V
= 4.5 V
GS
0.004
0.002
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
GS
DS
I
= 20 A
I = 20 A
D
0
10
20
30
40
50
−50 −25
0
25
50
75
100 125 150
T
J
− Junction Temperature (_C)
Q
g
− Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.025
0.020
0.015
0.010
0.005
0.000
50
T = 150_C
J
10
T = 25_C
J
I
D
= 20 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
3
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
50
I
D
= 250 mA
0.2
−0.0
−0.2
−0.4
−0.6
−0.8
40
30
20
10
0
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
− Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
10
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
4
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