SI4362BDY-RC [VISHAY]
R-C Thermal Model Parameters; R- C热模型参数型号: | SI4362BDY-RC |
厂家: | VISHAY |
描述: | R-C Thermal Model Parameters |
文件: | 总3页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si4362BDY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Foot
206.8218 m
4.2280
Junction to
RT1
Ambient
2.3510
Case
N/A
N/A
N/A
N/A
RT2
22.3383
31.8527
23.4503
RT3
8.8272
RT4
5.6292
Thermal Capacitance (Joules/°C)
Foot
Junction to
CT1
Ambient
10.8671 m
48.7958 m
1.8249
Case
N/A
N/A
N/A
N/A
9.5541 m
CT2
133.6946 m
180.3975 m
12.3666 m
CT3
CT4
4.3203
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73832
Revision 03-Mar-06
www.vishay.com
1
Si4362BDY_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Foot
Junction to
RF1
Ambient
3.7489
Case
N/A
N/A
N/A
N/A
3.2793
5.0772
7.7099
2.8938
RF2
22.2239
32.9041
21.1242
RF3
RF4
Thermal Capacitance (Joules/°C)
Junction to
Ambient
12.2646 m
32.9132 m
1.1221
Case
N/A
N/A
N/A
N/A
Foot
CF1
8.1813 m
6.5963 m
88.4814 m
361.1455 m
CF2
CF3
CF4
1.2290
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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2
Document Number: 73832
Revision 03-Mar-06
Si4362BDY_RC
Vishay Siliconix
Document Number: 73832
Revision 03-Mar-06
www.vishay.com
3
相关型号:
SI4362BDY-T1-E3
TRANSISTOR 19.8 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
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