VND810TR-E [STMICROELECTRONICS]
5A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16, SO-16;
| 型号： | VND810TR-E |
| 厂家： | 
ST |
| 描述： | 5A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16, SO-16 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总20页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VND810-E
DOUBLE CHANNEL HIGH SIDE DRIVER
Figure 1. Package
Table 1. General Features
Type
R
I
V
CC
DS(on)
out
VND810-E
160 mΩ (*)
3.5A (*)
36 V
(*) Per each channel
■ CMOS COMPATIBLE INPUTS
■ OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ PROTECTION AGAINST LOSS OF GROUND
■ VERY LOW STAND-BY CURRENT
■ REVERSE BATTERY PROTECTION (**)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
SO-16
DESCRIPTION
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both in on and off state. Output
The VND810-E is a monolithidevice designed in
STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to groun
shorted to V is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
Active V
pin voltage clamp protects the device
CC
CC
against low energy spikes (see ISO7637 transient
compatibility table).
Table 2. Order Codes
Package
Tube
Tape and Reel
VND810-E
VND810TR-E
SO-16
Note: (**) See application schematic at page 9
Rev. 1
1/20
October 2004
VND810-E
Figure 2. Block Diagram
Vcc
Vcc
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
GND
CLAMP 1
OUTPUT1
OUTPUT2
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
OPENLOAD ON 1
DRIVER 2
LOGIC
OVERTEMP. 1
CURRENT LIMITER 2
OPENLOAD O
INPUT2
OPENLOAD OFF 1
STATUS2
OPENLOAD OFF 2
OVERTEMP. 2
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
V
DC Supply Voltage
41
- 0.3
CC
- V
Reverse DC Supply Voltage
DC Reverse Grond Pin Current
DC Output Crent
V
CC
GND
OUT
- I
- 200
mA
A
I
Internally Limited
- 6
- I
Reverse DC Output Current
DC Input Current
A
OUT
I
IN
+/- 10
mA
mA
I
DC Status Current
+/- 10
stat
Electrostatic Discharge (Human Body Model:
R=1.5KΩ; C=100pF)
4000
4000
5000
5000
V
V
V
V
- INPUT
V
ESD
MAX
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy
(L=1.5mH; R =0Ω; V =13.5V; T =150ºC;
jstart
E
26
mJ
L
bat
I =5A)
L
P
Power Dissipation T =25°C
8.3
W
°C
°C
°C
tot
C
T
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
Internally Limited
- 40 to 150
j
T
c
T
- 55 to 150
stg
2/20
VND810-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
1
V
CC
V
CC
16
V
N.C.
GND
CC
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
INPUT 1
STATUS 1
STATUS 2
INPUT 2
V
CC
V
CC
8
V
CC
9
Connection / Pin Status N.C. Output
Input
Floating
X
X
X
X
X
To Ground
Through 10KΩ resistor
Figure 4. Current and Voltage Conventions
IS
VF1 (*)
IIN1
VCC
VCC
INPUT 1
ISTAT1
IOUT1
VOUT1
VIN1
OUTPUT 1
STATUS 1
IIN2
VSTAT1
INPUT 2
IOUT2
VOUT2
TAT2
VI2
OUTPUT 2
STATUS 2
GND
VSTAT2
IGND
(*) V = V
- V during reverse battery condition
OUTn
Fn
CCn
Table 4. Thermal Data
Symbol
Parameter
Value
Unit
°C/W
°C/W
R
thj-lead
thj-amb
Thermal Resistance Junction-lead
Thermal Resistance Junction-ambient
15
(1)
(2)
R
77
57
2
Note: 1. When mounted on a standard single-sided FR-4 board with 0.5cm of Cu (at least 35µm thick) connected to all V pins. Horizontal
CC
mounting and no artificial air flow.
2
Note: 2. When mounted on a standard single-sided FR-4 board with 4cm of Cu (at least 35µm thick) connected to all V pins. Horizontal
CC
mounting and no artificial air flow.
3/20
VND810-E
ELECTRICAL CHARACTERISTICS
(8V<V <36V; -40°C < T <150°C, unless otherwise specified)
CC
j
(Per each channel)
Table 5. Power Output
Symbol
(**)
Parameter
Test Conditions
Min.
5.5
3
Typ.
13
4
Max.
36
Unit
V
V
Operating Supply Voltage
CC
V
(**) Undervoltage Shut-down
5.5
V
USD
V
(**)
Overvoltage Shut-down
On State Resistance
36
V
OV
I
=1A; T =25°C
160
320
mΩ
mΩ
OUT
j
R
ON
I
=1A; V >8V
CC
OUT
12
40
µA
Off State; V =13V; V =V
=0V
OUT
CC
IN
Off State; V =13V; V =V
T =25°C
j
=0V;
OUT
CC
IN
I (**)
S
Supply Current
12
25
7
µA
On State; V =13V; V =5V; I
=0A
OUT
CC
IN
mA
I
I
I
I
Off State Output Current
Off State Output Current
Off State Output Current
Off State Output Current
V =V =0V
OUT
50
0
µA
µA
µA
µA
L(off1)
L(off2)
L(off3)
L(off4)
IN
V =0V; V
=3.5V
-75
IN
OUT
V =V
=0V; V =13V; T =125C
OUT
5
IN
CC
j
V =V
=0V; V =13V; T 5°C
OUT
3
IN
CC
j
Note: (**) Per device.
Table 6. Protection (see note 1)
Symbol
Parameter
Test Conditions
Min.
150
135
7
Typ.
Max.
Unit
°C
T
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
175
200
TSD
T
°C
R
T
15
5
°C
hyst
Status Dy in Overload
Conditions
T >T
j
TSD
t
20
µs
SDL
3.5
7.5
7.5
A
A
I
Current limitation
lim
5.5V<V <36V
CC
Turn-off Output Clamp
Voltage
V
41
-
V
55
-
CC
CC
V
I
=1A; L=6mH
V -48
CC
V
demag
OUT
Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles
Table 7. V - Output Diode
CC
Symbol
Parameter
Test Conditions
=0.5A; T=150°C
Min
Typ
Max
Unit
V
F
Forward on Voltage
-I
OUT
0.6
V
j
4/20
VND810-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. Status Pin
Symbol
Parameter
Test Conditions
= 1.6 mA
STAT
Min
Typ
Max
Unit
V
V
Status Low Output Voltage I
Status Leakage Current
0.5
10
STAT
I
Normal Operation; V
= 5V
STAT
µA
LSTAT
Status Pin Input
Capacitance
C
Normal Operation; V
= 5V
STAT
100
8
pF
STAT
I
= 1mA
6
6.8
V
V
STAT
V
Status Clamp Voltage
I
SCL
= - 1mA
-0.7
STAT
Table 9. Switching (V =13V)
CC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
R =13Ω from V rising edge to
L
IN
t
Turn-on Delay Time
30
µs
d(on)
d(off)
V
OUT
=1.3V
R =13Ω from V falling edge to
L
IN
t
Turn-off Delay Time
µs
V
OUT
=11.7V
See
R =13Ω from V
=1.3V to
L
OUT
dV
dV
/dt
Turn-on Voltage Slope
relative
diagram
See
relative
diagram
V/µs
OUT (on)
V
OUT
=10.4V
R =13Ω from V
=11.7V to
OUT
L
/dt
OUT (off)
Turn-off Voltage Slope
V/µs
V
OUT
=1.3V
Table 10. Openload Detection
Symbol
Parameter
Openload ON State
Detection Threshold
Openload ON State
Detection Delay
Test Conditions
Min
Typ
Max
Unit
I
OL
V =5V
20
40
80
mA
N
t
I =0A
OUT
200
µs
DOL(on)
Openload OFF ate
Voltage tection
Threshol
V
OL
V =0V
IN
1.5
2.5
3.5
V
Openload Detection Delay
at Turn Off
t
1000
µs
DOL(off)
Table 11. Logic Input
Symbol
Parameter
Test Conditions
= 1.25V
Min
Typ
Max
Unit
V
V
Input Low Level
1.25
IL
I
Low Level Input Current
Input High Level
V
V
1
µA
V
IL
IN
V
IH
3.25
I
IH
High Level Input Current
Input Hysteresis Voltage
= 3.25V
10
8
µA
V
IN
V
I(hyst)
0.5
6
I
I
= 1mA
6.8
V
IN
V
ICL
Input Clamp Voltage
= -1mA
-0.7
V
IN
5/20
VND810-E
Figure 5.
OPEN LOAD STATUS TIMING (with external pull-up)
OVERTEMP STATUS TIMING
I
< I
OL
OUT
V > V
OUT OL
T > T
j
TSD
V
INn
V
INn
V
STAT n
V
STAT n
t
t
SDL
SDL
t
t
DOL(off)
DOL(on)
Table 12. Truth Table
CONDITIONS
INPUT
OUTPUT
SENSE
L
H
L
H
H
H
Normal Operation
Current Limitation
L
H
H
L
X
X
H
) H
) L
(T < T
(T > T
j
j
TSD
TSD
L
H
L
L
H
L
Overtemperature
Undervoltage
Overvoltage
L
H
L
L
X
X
L
H
L
L
H
H
L
H
H
H
L
H
Output Voltage >
L
H
L
H
H
L
Output Current < I
OL
6/20
VND810-E
Figure 6. Switching Time Waveforms
V
OUTn
90%
80%
dV /dt
OUT (off)
dV /dt
OUT (on)
10%
t
V
INn
t
d(on)
t
d(off)
t
Table 13. Electrical Transient Requirements On V
ISO T/R 7637/1
Pin
CC
TEST LEVELS
III
I
II
IV
Delays and
Impedance
Test Pulse
1
2
-25 V
+V
-25 V
-50 V
+50 V
-50 V
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
3a
3b
4
+25 V
-4 V
+50 V
-5 V
5
+26.5 V
+46.5 V
+66.5 V
+86.5 V
SO T/R 7637/1
Test Pulse
TEST LEVELS RESULTS
I
II
C
C
C
C
C
E
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
1
2
C
C
C
C
C
C
3a
3b
4
5
CLASS
CONTENTS
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
7/20
VND810-E
Figure 7. Waveforms
NORMAL OPERATION
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
UNDERVOLTAGE
V
V
USDhyst
CC
V
USD
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
undefined
OVERVOLTAGE
V
>V
CC OV
V
<V
CC OV
V
CC
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
OPEN LOAD with external pull-up
INPUT
n
V
>V
OL
OUT
OUTPUVOLTAGE
n
V
OL
STATUS
n
OPEN LOAD without external pull-up
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
OVERTEMPERATURE
T
T
TSD
R
T
j
INPUT
n
OUTPUT CURRENT
n
STATUS
n
8/20
VND810-E
Figure 8. Application Schematic
+5V +5V
+5V
V
CC
R
prot
STATUS1
D
ld
R
prot
µC
INPUT1
OUTPUT1
R
prot
STATUS2
R
prot
INPUT2
OUTPUT2
GND
R
GND
D
V
GND
GND
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in e ground line (R
can be used with any type of load.
only). This
GND
Solution 2: A diode (D
) in the ground line.
GND
The following is n indication on how to dimension the
A resistor (R
GND
=1kΩ) should be inserted in parallel to
GND
R
resistor.
GND
D
if the device will be driving an inductive load.
1) R
2) R
≤ 600mV / I
.
S(on)max
)
GND
GND
G
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift ( 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
≥ (−V ) / (-I
CC
were -I
is the DC reverse ground pin current and can
GND
bfound in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
(when V <0: during reverse
CC
GND
battery situations) is:
2
P = (-V ) /R
D
CC
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
S(on)max
sum of the maximum on-state currents of the different
devices.
LOAD DUMP PROTECTION
Please note that if the microprocessor ground is not
D
is necessary (Voltage Transient Suppressor) if the
common with the device ground then the R
will
ld
GND
produce a shift (I
* R
) in the input thresholds
GND
load dump peak voltage exceeds V
max DC rating.
S(on)max
CC
and the status output values. This shift will vary
The same applies if the device will be subject to
transients on the V line that are greater than the ones
depending on how many devices are ON in the case of
CC
several high side drivers sharing the same R
.
GND
shown in the ISO T/R 7637/1 table.
9/20
VND810-E
positive supply voltage (V ) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
µC I/Os PROTECTION:
PU
If a ground protection network is used and negative
transient are present on the V line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
in line to prevent the µC I/Os pins to latch-up.
CC
)
prot
in this case we have to avoid V
to be higher than
OUT
The value of these resistors is a compromise between
the leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
V
; this results in the following condition
Olmin
V
OUT
=(V /(R +R ))R <V
PU L PU L Olmin.
2) no misdetection when load is disconnected: in this
case the V has to be higher than V ; this
OUT
OLmax
-V
/I
≤ R
≤ (V
-V -V
) / I
results in the following condition R <(V
V
)/
CCpeak latchup
prot
OHµC IH GND
IHmax
PU
PU– OLmax
I
.
L(off2)
Calculation example:
Because I
may significantly increase if V
is
PU
s(OFF)
out
For V
= - 100V and I
≥ 20mA; V ≥ 4.5V
OHµC
CCpeak
latchup
pulled high (up to several mA), the pull-up resistor R
should be connected to a supply that is switched OFF
when the module is in standby.
5kΩ ≤ R
≤ 65kΩ.
prot
Recommended R
value is 10kΩ.
prot
The values of V
, V
and I
are available in
L(off2)
OLmin
OLmax
the Electrical Characteristics section.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (R ) connected between OUTPUT pin and a
PU
Figure 9. Open Load detection in off state
V batt.
VPU
VC
RPU
DRIVER
+
IL(off2)
INPUT
LOGIC
OUT
+
-
R
STATUS
VOL
RL
GROUND
10/20
VND810-E
Figure 10. Off State Output Current
Figure 13. High Level Input Current
IL(off1) (uA)
Iih (uA)
1.6
5
1.44
4.5
Off state
Vin=3.25V
1.28
1.12
0.96
0.8
Vcc=36V
Vin=Vout=0V
4
3.5
3
2.5
2
0.64
0.48
0.32
0.16
0
1.5
1
0.5
0
-50
-25
0
25
50
75
100 125 150
175
175
175
-50
-25
0
25
50
75
100
125
150
175
175
175
Tc (ºC)
Tc (°C)
Figure 11. Input Clamp Voltage
Figure 14. Status Lakage Current
Vicl (V)
Ilstat (uA)
8
0.05
7.8
Iin=1mA
7.6
0.04
7.4
7.2
7
Vstat=5V
0.03
6.8
6.6
6.4
6.2
6
0.02
0.01
0
-50
-25
0
2
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
Tc (°C)
Tc (°C)
Figure 12. Status Low Output Voltage
Figure 15. Status Clamp Voltage
Vstat (V)
Vscl (V)
0.8
8
7.8
0.7
Istat=1mA
Istat=1.6mA
7.6
0.6
7.4
7.2
7
0.5
0.4
0.3
0.2
0.1
0
6.8
6.6
6.4
6.2
6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tc (°C)
Tc (°C)
11/20
VND810-E
Figure 16. On State Resistance Vs T
Figure 19. On State Resistance Vs V
case
CC
Ron (mOhm)
Ron (mOhm)
300
400
275
350
Iout=0.5A
250
Iout=0.5A
300
Tc= 150°C
Vcc=8V; 13V & 36V
225
250
200
175
150
200
150
100
50
Tc= 25°C
125
100
Tc= - 40°C
75
0
50
-50
-25
0
25
50
75
100 125
150
175
5
10
15
20
25
30
35
40
Tc (°C)
Vcc (V)
Figure 17. Openload On State Detection
Figure 20. OpenloOff State Detection
Threshold
Threshold
Iol (mA)
Vol (V)
60
5
55
4.5
Vin=0V
Vcc=13V
50
4
Vin=5V
45
3.5
3
40
35
30
25
20
15
10
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Figure 8. Input High Level
Figure 21. Input Low Level
Vih (V)
Vil (V)
3.6
2.6
3.4
3.2
3
2.4
2.2
2
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
12/20
VND810-E
Figure 22. Input Hysteresis Voltage
Figure 25. Overvoltage Shutdown
Vhyst (V)
Vov (V)
1.5
50
1.4
1.3
1.2
1.1
1
48
46
44
42
40
38
36
34
32
30
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Figure 23. Turn-on Voltage Slope
Figure 26. Turn-ofoltage Slope
dVout/dt(on) (V/ms)
dVout/dt(off) (V/ms
1000
500
900
450
Vcc=13V
Rl=13Ohm
Vcc=13V
Rl=13Ohm
800
400
700
350
600
500
400
300
200
100
0
300
250
200
150
100
50
0
-50
-25
0
5
50
75
100 125 150 175
-50
-25
0
25
50
75
100 125
150
175
Tc (ºC)
Tc (ºC)
Figure 24. I
Vs T
case
LIM
Ilim (A)
10
9
8
7
6
5
4
3
2
1
0
Vcc=13V
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
13/20
VND810-E
Figure 27. Maximum turn off current versus load inductance
LMAX (A)
I
10
A
B
1
0.1
1
10
100
L(mH)
A = Single Pulse at T
=150ºC
Values are generated with R =0Ω
L
Jstart
B= Repetitive pulse at T
=00ºC
Jstart
In case of repetitive pulses, T
(at beginning of
jstart
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
C= Repetitive Pulse at T
=125ºC
Jst
Conditions:
V
=13.5V
CC
V , I
IN
L
Demagnetization
Demagnetization
Demagnetization
t
14/20
VND810-E
PowerSO-10™ Thermal Data
Figure 28. SO-16 PC Board
Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=1.6mm,
th
th
2
2
Cu thickness=35µm, Copper areas: 0.26cm , 4cm ).
Figure 29. R
Vs PCB copper area in open box free air condition
thj-amb
RTH j-am b
(°C/W)
85
80
75
70
65
60
55
50
45
40
0
1
2
3
4
5
PCB Cu heatsink area (cm^2)
15/20
VND810-E
Figure 30. SO-16 Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
10
2
0.26 cm
2
4 cm
1
0.1
0.01
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Figure 31. Thermal fittinmodel of a double
channel HSD in SO6
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Table 14. Thermal Parameter
2
Area/island (cm )
0.5
0.35
1.8
4
25
4
Tj_1
C1
R1
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R1 (°C/W)
R2 (°C/W)
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
Pd1
4.5
C2
Tj_2
10
R2
16
Pd2
48
0.0001
T_amb
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
7.00E-04
6.00E-03
0.2
0.7
2
16/20
VND810-E
PACKAGE MECHANICAL
Table 15. SO-16 Mechanical Data
Symbol
millimeters
Typ
Min
Max
A
a1
a2
b
b1
C
1.75
0.2
1.65
0.46
0..25
0.1
0.35
0.19
0.5
c1
D
E
45° (typ.)
9.8
5.8
10
6.2
e
e3
F
G
L
1.27
8.89
3.8
4.6
0.5
4.0
5.3
1.27
0.62
M
S
8° (max.)
Figure 32. SO-16 Package Dimensions
17/20
VND810-E
Figure 33. SO-16 Suggested Pad Layout And Tube Shipment (no suffix)
B
Base Q.ty
50
1000
532
3.2
6
C
A
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
0.6
All dimensions are in mm.
Figure 34. Tape And Reel Shipment (suffix “TR”)
REEL DIMESIONS
.All dimensions are in mm.
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
1000
1000
330
1.5
13
20.2
16.4
60
G (+ 2 / -0)
N (min)
T (max)
22.4
TAPE DIMENSIONS
According to Electrnic Industries Association
(EIA) Standar481 rev. A, Feb 1986
Tape wdth
W
P0 (± 0.1)
P
16
4
TaHole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
7.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
No components
500mm min
Components
No components
500mm min
cover
tape
Empty components pockets
saled with cover tape.
User direction of feed
18/20
VND810-E
REVISION HISTORY
Date
Revision
Description of Changes
Oct. 2004
1
- First Issue
19/20
VND810-E
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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20/20
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