VND830-E [STMICROELECTRONICS]
DOUBLE CHANNEL HIGH SIDE DRIVER; 双通道高侧驱动器
| 型号： | VND830-E |
| 厂家： | 
ST |
| 描述： | DOUBLE CHANNEL HIGH SIDE DRIVER |
| 文件： | 总20页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VND830-E
DOUBLE CHANNEL HIGH SIDE DRIVER
Figure 1. Package
Table 1. General Features
Type
R
I
V
CC
DS(on)
out
VND830-E
60mΩ (*)
6A (*)
36V
(*) Per each channel
■ CMOS COMPATIBLE INPUTS
■ OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ LOSS OF GROUND PROTECTION
■ VERY LOW STAND-BY CURRENT
■ REVERSE BATTERY PROTECTION (**)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
SO-16L
DESCRIPTION
The VND830-E is a monolithic device made by
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both is on and off state. Output
using
STMicroelectronics
VIPower
M0-3
Technology, intended for driving any kind of load
with one side connected to ground. Active V pin
CC
voltage clamp protects the devices against low
shorted to V is detected in the off state. Device
CC
energy
spikes
(see
ISO7637
transient
automatically turns off in case of ground pin
disconnection.
compatibility table).
Table 2. Order Codes
Package
Tube
Tape and Reel
VND830-E
VND830TR-E
SO-16L
Note: (*) See application schematic at page 9
Rev. 3
1/20
February 2005
VND830-E
Figure 2. Block Diagram
VCC
VCC
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
GND
OUTPUT1
OUTPUT2
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
OPENLOAD ON 1
DRIVER 2
LOGIC
OVERTEMP. 1
CURRENT LIMITER 2
OPENLOAD ON 2
INPUT2
OPENLOAD OFF 1
STATUS2
OPENLOAD OFF 2
OVERTEMP. 2
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
V
CC
DC Supply Voltage
41
- 0.3
- V
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
V
CC
GND
OUT
- I
- 200
mA
A
I
Internally Limited
- 6
- I
OUT
Reverse DC Output Current
DC Input Current
A
I
IN
+/- 10
mA
mA
I
DC Status Current
+/- 10
STAT
Electrostatic Discharge (Human Body Model:
R=1.5KΩ; C=100pF)
- INPUT
4000
4000
5000
5000
V
V
V
V
V
ESD
MAX
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy
E
102
mJ
(L=1.8mH; R =0Ω; V =13.5V; T =150ºC;
jstart
L
L
bat
I =9A)
P
Power Dissipation T
=25°C
8.3
W
°C
°C
°C
tot
lead
T
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
Internally Limited
- 40 to 150
j
T
c
T
- 55 to 150
stg
2/20
VND830-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
1
VCC
VCC
16
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
OUTPUT 2
VCC
N.C.
GND
INPUT 1
STATUS 1
STATUS 2
INPUT 2
VCC
8
9
Connection / Pin Status N.C. Output
Input
Floating
X
X
X
X
X
To Ground
Through 10KΩ resistor
Figure 4. Current and Voltage Conventions
I
S
V
F1
(*)
I
IN1
V
CC
V
CC
INPUT 1
I
OUT1
I
STAT1
V
IN1
OUTPUT 1
STATUS 1
INPUT 2
V
OUT1
I
V
IN2
STAT1
I
OUT2
I
V
IN2
STAT2
OUTPUT 2
V
OUT2
STATUS 2
GND
V
STAT2
I
GND
(*) V = V
- V
during reverse battery condition
Fn
CCn
OUTn
Table 4. Thermal Data
Symbol
Parameter
Value
Unit
°C/W
°C/W
R
R
Thermal resistance junction-lead
Thermal resistance junction-ambient
(MAX)
(MAX)
15
thj-lead
65 (*)
48 (**)
thj-amb
(*)
2
Note: When mounted on a standard single-sided FR-4 board with 0.5cm of Cu (at least 35µm thick) connected to all V pins. Horizontal
CC
mounting and no artificial air flow.
(**)
2
Note:
When mounted on a standard single-sided FR-4 board with 6 cm of Cu (at least 35µm thick) connected to all V pins. Horizontal
CC
mounting and no artificial air flow.
3/20
VND830-E
ELECTRICAL CHARACTERISTICS
(8V<V <36V; -40°C< T <150°C, unless otherwise specified)
CC
j
(Per each channel)
Table 5. Power Output
Symbol
(**)
Parameter
Test Conditions
Min.
5.5
3
Typ.
13
4
Max.
36
Unit
V
V
CC
Operating Supply Voltage
V
(**) Undervoltage Shut-down
5.5
V
USD
V
(**)
Overvoltage Shut-down
On State Resistance
36
V
OV
I
I
=2A; T =25 °C
60
mΩ
mΩ
OUT
j
R
ON
=2A; V > 8V
120
OUT
CC
12
40
µA
Off State; V =13V; V =V
=0V
OUT
CC
IN
Off State; V =13V; V =V
T =25°C
j
=0V;
OUT
CC
IN
I (**)
S
Supply Current
12
5
25
7
µA
mA
On State; V =13V; V =5V; I
=0A
OUT
CC
IN
I
Off State Output Current
Off State Output Current
Off State Output Current
Off State Output Current
V =V =0V
OUT
0
50
0
µA
µA
µA
µA
L(off1)
IN
I
V =0V; V
=3.5V
-75
L(off2)
IN
OUT
I
V =V
=0V; V =13V; T =125°C
OUT
5
L(off3)
IN
CC
j
I
V =V
=0V; V =13V; T =25°C
OUT
3
L(off4)
IN
CC
j
Note: (**) Per device.
Table 6. Protection (Per each channel) (See note 1)
Symbol
Parameter
Test Conditions
Min.
150
135
7
Typ.
Max.
Unit
°C
T
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
175
200
TSD
T
°C
R
T
15
9
°C
hyst
SDL
Status Delay in Overload
Conditions
T >T
j
TSD
T
20
µs
V
CC
=13V
6
15
15
A
A
I
Current limitation
lim
5.5V < V < 36V
CC
Turn-off Output Clamp
Voltage
V
I
=2A; L= 6mH
V
-41
V
-48
V -55
CC
V
demag
OUT
CC
CC
Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles
Table 7. V - Output Diode
CC
Symbol
Parameter
Test Conditions
=1.3A; T =150°C
Min
Typ
Max
Unit
V
F
Forward on Voltage
-I
OUT
0.6
V
j
4/20
VND830-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. Status Pin
Symbol
Parameter
Test Conditions
= 1.6 mA
STAT
Min
Typ
Max
Unit
V
V
I
Status Low Output Voltage
Status Leakage Current
I
0.5
10
STAT
Normal Operation; V
= 5V
STAT
µA
LSTAT
Status Pin Input
Capacitance
C
Normal Operation; V
= 5V
STAT
100
8
pF
STAT
I
I
= 1mA
6
6.8
V
V
STAT
V
Status Clamp Voltage
SCL
= - 1mA
-0.7
STAT
Table 9. Switching (V =13V)
CC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
R =6.5Ω from V rising edge to
OUT
L
IN
t
Turn-on Delay Time
30
µs
d(on)
V
=1.3V
R =6.5Ω from V falling edge to
OUT
L
IN
t
Turn-off Delay Time
30
µs
d(off)
V
=11.7V
See
R =6.5Ω from V
OUT
=1.3V to
L
OUT
dV/dt
Turn-on Voltage Slope
relative
diagram
See
relative
diagram
V/µs
(on)
V
=10.4V
R =6.5Ω from V
=11.7V to
L
OUT
dV/dt
Turn-off Voltage Slope
V/µs
(off)
V
OUT
=1.3V
Table 10. Openload Detection
Symbol
Parameter
Openload ON State
Detection Threshold
Openload ON State
Detection Delay
Test Conditions
Min
Typ
Max
Unit
I
V =5V
50
100
200
mA
OL
IN
t
t
I =0A
OUT
200
3.5
µs
V
DOL(on)
Openload OFF State
Voltage Detection
Threshold
V
OL
V =0V
IN
1.5
2.5
Openload Detection
Delay at Turn Off
1000
µs
DOL(off)
Table 11. Logic Input
Symbol
Parameter
Input Low Level
Test Conditions
Min
Typ
Max
Unit
V
V
I
1.25
IL
Low Level Input Current V = 1.25V
1
µA
V
IL
IN
V
Input High Level
3.25
IH
High Level Input Cur-
rent
I
V
= 3.25V
10
8
µA
IH
IN
Input Hysteresis Volt-
age
0.5
6
V
hyst
V
I
I
= 1mA
6.8
V
V
IN
V
Input Clamp Voltage
ICL
= -1mA
-0.7
IN
5/20
VND830-E
Table 12. Truth Table
CONDITIONS
INPUT
OUTPUT
SENSE
L
H
L
H
H
H
Normal Operation
Current Limitation
L
H
H
L
X
X
H
) H
) L
(T < T
(T > T
j
j
TSD
TSD
L
H
L
L
H
L
Overtemperature
Undervoltage
Overvoltage
L
H
L
L
X
X
L
H
L
L
H
H
L
H
H
H
L
H
Output Voltage > V
OL
L
H
L
H
H
L
Output Current < I
OL
Figure 5. Switching time Waveforms
V
OUTn
90%
80%
dV /dt
OUT (off)
dV
/dt
OUT (on)
10%
t
V
INn
t
d(on)
t
d(off)
t
6/20
VND830-E
Table 13. Electrical Transient Requirements On V
ISO T/R 7637/1
Pin
CC
TEST LEVELS
III
Test Pulse
I
II
IV
Delays and
Impedance
1
2
-25 V
+25 V
-25 V
-50 V
+50 V
-50 V
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
3a
3b
4
+25 V
-4 V
+50 V
-5 V
5
+26.5 V
+46.5 V
+66.5 V
+86.5 V
ISO T/R 7637/1
Test Pulse
TEST LEVELS RESULTS
I
II
C
C
C
C
C
E
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
1
2
C
C
C
C
C
C
3a
3b
4
5
CLASS
CONTENTS
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
7/20
VND830-E
Figure 6. Waveforms
NORMAL OPERATION
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
UNDERVOLTAGE
V
V
USDhyst
CC
V
USD
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
undefined
OVERVOLTAGE
V
<V
OV
CC
V
CC
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
OPEN LOAD with external pull-up
INPUT
n
V
OUT
>V
OL
OUTPUT VOLTAGE
n
V
OL
STATUS
n
OPEN LOAD without external pull-up
INPUT
n
OUTPUT VOLTAGE
n
STATUS
n
OVERTEMPERATURE
T
TSD
T
R
T
j
INPUT
n
OUTPUT CURRENT
n
STATUS
n
8/20
VND830-E
Figure 7. Application Schematic
+5V +5V
+5V
V
CC
R
prot
STATUS1
D
ld
R
prot
µC
INPUT1
OUTPUT1
R
prot
STATUS2
R
prot
INPUT2
OUTPUT2
GND
R
GND
D
V
GND
GND
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggest to utilize Solution 2 (see
below).
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
only). This
GND
Solution 2: A diode (D
) in the ground line.
GND
The following is an indication on how to dimension the
A resistor (R
GND
=1kΩ) should be inserted in parallel to
GND
R
resistor.
GND
D
if the device will be driving an inductive load.
1) R
2) R
≤ 600mV / I
.
S(on)max
)
GND
GND
GND
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
≥ (−V ) / (-I
CC
where -I
is the DC reverse ground pin current and can
GND
be found in the absolute maximum rating section of the of
the device’s datasheet.
Power Dissipation in R
(when V <0: during reverse
CC
GND
battery situations) is:
2
P = (-V ) /R
D
CC
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
calculated with formula (1) where I
becomes the
S(on)max
sum of the maximum on-state currents of the different
devices.
LOAD DUMP PROTECTION
Please note that if the microprocessor ground is not
D
is necessary (Voltage Transient Suppressor) if the
ld
common with the device ground then the R
will
GND
load dump peak voltage exceeds V
max DC rating.
CC
produce a shift (I
* R
) in the input thresholds
GND
S(on)max
The same applies if the device will be subject to
and the status output values. This shift will vary
transients on the V line that are greater than the ones
CC
depending on many devices are ON in the case of several
shown in the ISO T/R 7637/1 table.
high side drivers sharing the same R
.
GND
9/20
VND830-E
.µC I/Os PROTECTION:
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
If a ground protection network is used and negative
transient are present on the V line, the control pins will
CC
be pulled negative. ST suggests to insert a resistor (R
)
prot
1) no false open load indication when load is connected:
in line to prevent the µC I/Os pins to latch-up.
in this case we have to avoid V
to be higher than
OUT
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
V
; this results in the following condition
Olmin
V =(V /(R +R ))R <V
OUT PU L PU L Olmin.
2) no misdetection when load is disconnected: in this
case the V has to be higher than V ; this
-V
/I
≤ R
≤ (V
-V -V
) / I
CCpeak latchup
prot
OHµC IH GND IHmax
OUT
OLmax
Calculation example:
results in the following condition R <(V
V
)/
PU
PU– OLmax
For V
= - 100V and I
≥ 20mA; V ≥ 4.5V
OHµC
CCpeak
latchup
I
.
L(off2)
5kΩ ≤ R
≤ 65kΩ.
prot
Because I
may significantly increase if V
is
s(OFF)
out
Recommended R
value is 10kΩ.
prot
pulled high (up to several mA), the pull-up resistor R
PU
should be connected to a supply that is switched OFF
when the module is in standby.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
The values of V
, V
and I
are available in
L(off2)
OLmin
OLmax
resistor (R ) connected between OUTPUT pin and a
PU
the Electrical Characteristics section.
positive supply voltage (V ) like the +5V line used to
PU
Figure 8. Open Load detection in off state
V batt.
VPU
VCC
RPU
DRIVER
+
IL(off2)
INPUT
LOGIC
OUT
+
-
R
STATUS
VOL
RL
GROUND
10/20
VND830-E
Figure 9. Off State Output Current
Figure 12. High Level Input Current
IL(off1) (uA)
2.5
Iih (uA)
5
2.25
4.5
Off state
Vcc=36V
Vin=3.25V
2
4
Vin=Vout=0V
1.75
3.5
3
1.5
1.25
1
2.5
2
0.75
0.5
0.25
0
1.5
1
0.5
0
-50
-25
0
25
50
75
100 125 150
175
175
175
-50
-25
0
25
50
75
100
125
150
175
175
175
Tc (°C)
Tc (°C)
Figure 10. Input Clamp Voltage
Figure 13. Status Leakage Current
Vicl (V)
8
Ilstat (uA)
0.05
7.8
Iin=1mA
7.6
0.04
7.4
7.2
7
Vstat=5V
0.03
6.8
6.6
6.4
6.2
6
0.02
0.01
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
Tc (°C)
Tc (°C)
Figure 11. Status Low Output Voltage
Figure 14. Status Clamp Voltage
Vstat (V)
0.8
Vscl (V)
8
7.8
0.7
Istat=1mA
Istat=1.6mA
7.6
0.6
7.4
7.2
7
0.5
0.4
0.3
0.2
0.1
0
6.8
6.6
6.4
6.2
6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tc (°C)
Tc (°C)
11/20
VND830-E
Figure 15. Overvoltage Shutdown
Figure 18. I Vs T
LIM case
Vov (V)
50
Ilim (A)
20
48
46
44
42
40
38
36
34
32
30
18
16
14
12
10
8
Vcc=13V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
175
175
175
-50
-25
0
25
50
75
100
125
150
175
175
40
Tc (°C)
Tc (°C)
Figure 16. Turn-on Voltage Slope
Figure 19. Turn-off Voltage Slope
dVout/dt(on) (V/ms)
800
dVout/dt(off) (V/ms)
600
700
550
Vcc=13V
Vcc=13V
Rl=6.5Ohm
Rl=6.5Ohm
600
500
500
400
300
200
100
0
450
400
350
300
250
200
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tc (ºC)
Tc (ºC)
Figure 17. On State Resistance Vs T
Figure 20. On State Resistance Vs V
case
CC
Ron (mOhm)
160
Ron (mOhm)
120
Tc=150°C
110
140
Iout=2A
100
90
Vcc=8V; 13V & 36V
120
80
100
80
60
40
20
0
70
60
Tc=25°C
50
40
Tc= - 40°C
30
20
Iout=5A
10
0
-50
-25
0
25
50
75
100 125
150
5
10
15
20
25
30
35
Tc (°C)
Vcc (V)
12/20
VND830-E
Figure 21. Input High Level
Figure 24. Input Low Level
Vih (V)
3.6
Vil (V)
2.6
3.4
3.2
3
2.4
2.2
2
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Figure 22. Openload On State Detection
Threshold
Figure 25. Openload Off State Detection
Threshold
Vol (V)
5
Iol (mA)
150
4.5
140
Vin=0V
4
Vcc=13V
Vin=5V
130
3.5
3
120
2.5
2
110
100
90
1.5
1
80
0.5
0
70
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100 125 150 175
Tc (° C)
Tc (°C)
Figure 23. Input Hysteresis Voltage
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
13/20
VND830-E
Figure 26. SO-16L Maximum turn off current versus load inductance
LMAX (A)
I
100
10
1
A
B
C
0.1
1
10
100
L(mH)
A = Single Pulse at T
=150ºC
Values are generated with R =0Ω
L
Jstart
B= Repetitive pulse at T
=100ºC
Jstart
In case of repetitive pulses, T
(at beginning of
jstart
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
C= Repetitive Pulse at T
=125ºC
Jstart
Conditions:
V
=13.5V
CC
V , I
IN
L
Demagnetization
Demagnetization
Demagnetization
t
14/20
VND830-E
SO-16L Thermal Data
Figure 27. SO-16L PC Board
Layout condition of R and Z measurements (PCB FR4 area= 41mm x 48mm, PCB thickness=2mm,
th
th
2
2
Cu thickness=35µm, Copper areas: 0.5cm , 6cm ).
Figure 28. R
Vs PCB copper area in open box free air condition
thj-amb
RTH j-amb (°C/W)
70
65
60
55
50
45
40
0
1
2
3
4
5
6
7
PCB Cu heatsink area (cm^2)
15/20
VND830-E
Figure 29. SO-16L Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
10
Footprint
2
6 cm
1
0.1
0.01
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Figure 30. Thermal fitting model of a double
channel HSD in SO-16L
Pulse calculation formula
ZTHδ = RTH ⋅ δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Table 14. Thermal Parameter
2
Area/island (cm )
Footprint
6
22
5
Tj_1
C1
R1
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R1 (°C/W)
0.05
0.3
R2 (°C/W)
Pd1
R3 ( °C/W)
R4 (°C/W)
2.2
C2
Tj_2
12
R2
R5 (°C/W)
15
Pd2
R6 (°C/W)
37
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0.001
5.00E-03
0.02
0.3
T_amb
1
3
16/20
VND830-E
PACKAGE MECHANICAL
Table 15. SO-16L Mechanical Data
Symbol
millimeters
Typ
Min
Max
A
a1
a2
b
b1
C
2.65
0.2
2.45
0.49
0.32
0.1
0.35
0.23
0.5
c1
D
E
45° (typ.)
10.1
10.0
10.5
10.65
e
e3
F
1.27
8.89
7.4
0.5
7.6
L
1.27
0.75
M
S
8° (max.)
Figure 31. SO-16L Package Dimensions
17/20
VND830-E
Figure 32. SO-16L Tube Shipment (No Suffix)
Base Q.ty
50
1000
532
3.5
Bulk Q.ty
Tube length (± 0.5)
C
B
A
B
13.8
0.6
C (± 0.1)
All dimensions are in mm.
A
Figure 33. Tape And Reel Shipment (Suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
1000
1000
330
1.5
13
20.2
16.4
60
G (+ 2 / -0)
N (min)
T (max)
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
16
4
Tape Hole Spacing
Component Spacing
Hole Diameter
P0 (± 0.1)
P
12
1.5
1.5
7.5
6.5
2
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
End
r
Start
Top
No components
500mm min
Components
No components
500mm min
cover
tape
Empty components pockets
saled with cover tape.
User direction of feed
18/20
VND830-E
REVISION HISTORY
Date
Revision
Description of Changes
value correction: 60mΩ instead of 35mΩ.
- Iol curve changed.
Nov. 2004
Feb. 2005
2
3
- R
DS(on)
19/20
VND830-E
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