STW28NM60ND [STMICROELECTRONICS]

N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package;
STW28NM60ND
型号: STW28NM60ND
厂家: ST    ST
描述:

N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

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STB28NM60ND, STF28NM60ND,  
STP28NM60ND, STW28NM60ND  
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs  
in D²PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet  
-
production data  
Features  
TAB  
VDS @  
2
Order codes  
RDS(on) max  
ID  
3
TJ max.  
1
3
2
1
D2PAK  
STB28NM60ND  
STF28NM60ND  
STP28NM60ND  
STW28NM60ND  
TO-220FP  
TAB  
650 V  
0.150  
23 A  
3
3
2
2
1
1
Intrinsic fast-recovery body diode  
100% avalanche tested  
TO-220  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1. Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
'ꢅꢆꢇĆ7$%ꢈ  
Applications  
Switching applications  
*ꢅꢁꢈ  
Description  
These FDmesh™ II Power MOSFETs with  
6ꢅꢉꢈ  
intrinsic fast-recovery body diode are produced  
using the second generation of MDmesh™  
technology. Utilizing a new strip-layout vertical  
structure, these revolutionary devices feature  
extremely low on-resistance and superior  
switching performance. They are ideal for bridge  
topologies and ZVS phase-shift converters.  
$0ꢀꢁꢂꢃꢄYꢁ  
Table 1. Device summary  
Order codes  
Marking  
Packages  
Packaging  
STB28NM60ND  
STF28NM60ND  
STP28NM60ND  
STW28NM60ND  
D2PAK  
TO-220FP  
TO-220  
Tape and reel  
28NM60ND  
Tube  
TO-247  
May 2014  
DocID024520 Rev 3  
1/22  
This is information on a product in full production.  
www.st.com  
22  
Contents  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
2
4.1  
4.2  
4.3  
4.4  
D PAK, STB28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
TO-220FP, STF28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
TO-220, STP28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
TO-247, STW28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
5
6
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
2/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Electrical ratings  
1
Electrical ratings  
Table 2. Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
D2PAK, TO-220,  
TO-220FP  
TO-247  
VDS  
VGS  
ID  
Drain-source voltage  
600  
±25  
V
V
Gate-source voltage  
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
23  
14.5  
92  
23(1)  
14.5(1)  
92(1)  
35  
A
A
ID  
(2)  
IDM  
A
PTOT  
Total dissipation at TC = 25 °C  
Peak diode recovery voltage slope  
190  
W
dv/dt(3)  
40  
V/ns  
Insulation withstand voltage (RMS) from  
all three leads to external heat sink  
VISO  
2500  
V
(t=1 s; TC=25 °C)  
Tstg  
TJ  
Storage temperature  
–55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited by maximum junction temperature  
2. Pulse width limited by safe operating area  
3.  
I
23 A, di/dt 600 A/μs, V = 80% V  
SD DD (BR)DSS  
Table 3. Thermal data  
Parameter D²PAK TO-220FP TO-220 TO-247 Unit  
Symbol  
Rthj-case Thermal resistance junction-case max  
0.66  
3.6  
0.66  
°C/W  
°C/W  
°C/W  
Rthj-amb Thermal resistance junction-ambient max  
62.5  
50  
(1)  
Rthj-pcb  
Thermal resistance junction-pcb max  
30  
1. When mounted on 1inch² FR-4 board, 2 oz Cu  
Table 4. Avalanche characteristics  
Symbol  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-  
repetitive (pulse width limited by TJ max)  
IAR  
5
A
Single pulse avalanche energy  
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)  
EAS  
450  
mJ  
DocID024520 Rev 3  
3/22  
 
Electrical characteristics  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
2
Electrical characteristics  
(TCASE=25 °C unless otherwise specified).  
Table 5. On/off states  
Test conditions  
Value  
Symbol  
Parameter  
Unit  
Min.  
Typ. Max.  
Drain-source  
V(BR)DSS  
ID = 1 mA, VGS = 0  
600  
V
breakdown voltage  
VDD= 480 V, ID= 23 A,  
VGS= 10 V  
dv/dt(1) Drain source voltage slope  
45  
V/ns  
V
DS = 600 V  
1
μA  
μA  
Zero gate voltage  
IDSS  
drain current (VGS = 0)  
VDS = 600 V, TC= 125 °C  
100  
Gate-body leakage  
IGSS  
VGS = ± 20 V  
±100  
nA  
V
current (VDS = 0)  
VGS(th) Gate threshold voltage  
VDS = VGS, ID = 250 μA  
3
4
5
Static drain-source on  
RDS(on)  
V
GS = 10 V, ID = 11.5 A  
0.13  
0.15  
Ω
resistance  
1. Characteristic value at turn off on inductive load.  
Table 6. Dynamic  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max.  
Unit  
Ciss  
Input capacitance  
Output capacitance  
-
-
2090  
90  
-
-
pF  
pF  
VDS = 100 V, f = 1 MHz,  
VGS = 0  
Coss  
Reverse transfer  
capacitance  
Crss  
-
-
5.5  
-
-
pF  
pF  
Equivalent output  
capacitance  
(1)  
Coss eq.  
VGS = 0, VDS = 0 to 480 V  
VDD = 300 V, ID = 11.5 A  
312  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
-
-
-
-
-
-
-
23.5  
21.5  
92  
-
-
-
-
-
-
-
ns  
ns  
RG = 4.7 Ω VGS = 10 V  
(see Figure 18),  
(see Figure 20)  
Turn-off delay time  
Fall time  
ns  
27  
ns  
Qg  
Total gate charge  
Gate-source charge  
Gate-drain charge  
62.5  
11  
nC  
nC  
nC  
VDD = 480 V, ID = 23 A,  
VGS = 10 V,  
(see Figure 10)  
Qgs  
Qgd  
38  
f = 1 MHz,  
test signal level = 20 mV,  
Rg  
Gate input resistance  
-
4.7  
-
Ω
ID = 0  
1.  
C
. is defined as a constant equivalent capacitance giving the same charging time as C  
when V  
oss eq  
oss  
DS  
increases from 0 to 80% V  
DSS  
4/22  
DocID024520 Rev 3  
 
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Table 7. Source drain diode  
Electrical characteristics  
Min. Typ. Max. Unit  
Symbol  
Parameter  
Test conditions  
ISD  
Source-drain current  
-
-
-
-
-
-
-
-
23  
92  
A
A
(1)  
ISDM  
Source-drain current (pulsed)  
Forward on voltage  
(2)  
VSD  
ISD = 23 A, VGS = 0  
1.6  
V
trr  
Qrr  
IRRM  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
Reverse recovery time  
Reverse recovery charge  
170  
1160  
14  
ns  
nC  
A
ISD = 23 A, VDD = 60 V  
di/dt=100 A/μs  
(see Figure 17)  
ISD = 23 A,VDD = 60 V  
di/dt=100 A/μs,  
TJ = 150 °C  
237  
2090  
ns  
nC  
Qrr  
IRRM  
Reverse recovery current  
-
18  
A
(see Figure 17)  
1. Pulse width limited by safe operating area  
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.  
DocID024520 Rev 3  
5/22  
 
Electrical characteristics  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area for D2PAK and  
Figure 3. Thermal impedance for D2PAK and  
TO-220  
TO-220  
AM16038v1  
I
D
(A)  
10µs  
100µs  
10  
1ms  
10ms  
1
Tj=150°C  
Tc=25°C  
Single pulse  
0.1  
0.1  
10  
VDS(V)  
1
100  
Figure 4. Safe operating area for TO-220FP  
Figure 5. Thermal impedance for TO-220FP  
AM16039v1  
I
D
(A)  
10  
10µs  
100µs  
1ms  
1
10ms  
0.1  
Tj=150°C  
Tc=25°C  
Single pulse  
0.01  
10  
VDS(V)  
0.1  
1
100  
Figure 6. Safe operating area for TO-247  
Figure 7. Thermal impedance for TO-247  
AM16040v1  
I
D
(A)  
10µs  
10  
100µs  
1ms  
10ms  
1
Tj=150°C  
Tc=25°C  
Single pulse  
0.1  
0.1  
V
DS(V)  
1
10  
100  
6/22  
DocID024520 Rev 3  
 
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Electrical characteristics  
Figure 8. Output characteristics  
Figure 9. Transfer characteristics  
AM16041v1  
AM16042v1  
I
D
(A)  
I
D
(A)  
60  
V
GS=10V  
9V  
8V  
VDS=19V  
60  
50  
40  
30  
50  
40  
30  
20  
7V  
20  
10  
0
6V  
5V  
10  
0
2
VDS(V)  
8
0
10  
VGS(V)  
0
4
6
5
10  
20  
15  
Figure 10. Gate charge vs gate-source voltage  
Figure 11. Static drain-source on-resistance  
AM16043v1  
AM16044v1  
V
(V)  
GS  
R
DS(on)  
V
DS  
(V)  
(Ω)  
V
DD=480V  
=23A  
V
GS=10V  
0.136  
12  
I
D
500  
VDS  
0.134  
10  
8
400  
300  
200  
0.132  
0.130  
0.128  
6
4
2
0
0.126  
0.124  
0.122  
100  
0
10  
15  
20  
5
Q
g
(nC)  
ID(A)  
0
10  
40  
0
20 30  
50 60 70  
Figure 12. Capacitance variations  
Figure 13. Output capacitance stored energy  
AM16045v1  
AM16046v1  
C
(pF)  
E
(µJ)  
oss  
12  
10000  
10  
8
Ciss  
1000  
100  
10  
6
Coss  
Crss  
4
2
0
1
0.1  
100  
1
10  
V
DS(V)  
0
100  
300 400 500 600  
200  
VDS(V)  
DocID024520 Rev 3  
7/22  
Electrical characteristics  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Figure 14. Normalized gate threshold voltage vs  
temperature  
Figure 15. Normalized on-resistance vs  
temperature  
AM16047v1  
AM16048v1  
V
GS(th)  
(norm)  
R
DS(on)  
(norm)  
2.1  
I
D
=11.5A  
1.10  
ID=250µA  
V
GS=10V  
1.9  
1.00  
0.90  
1.7  
1.5  
1.3  
1.1  
0.9  
0.80  
0.70  
0.7  
0.5  
-50  
-25  
-50  
-25  
0
25 50 75  
T
J
(°C)  
0
25 50 75  
TJ(°C)  
100  
100  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Normalized VDS vs temperature  
AM16050v1  
AM16049v1  
V
(V)  
1.4  
SD  
VDS  
(norm)  
1.10  
ID=1mA  
1.08  
1.06  
1.04  
1.02  
1.2  
TJ=-50°C  
1
0.8  
TJ=150°C  
1.00  
0.98  
0.6  
TJ=25°C  
0.4  
0.2  
0
0.96  
0.94  
0.92  
0
-50  
4
8
12  
16  
20  
I
SD(A)  
-25  
0
25 50 75  
TJ(°C)  
100  
8/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Test circuits  
3
Test circuits  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
VDD  
12V  
47kΩ  
1kΩ  
100nF  
2200  
μF  
3.3  
μF  
RL  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VD  
RG  
VGS  
2200  
μF  
D.U.T.  
VG  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped inductive load test circuit  
L
A
A
A
B
D
S
FAST  
DIODE  
L=100μH  
VD  
G
2200  
μF  
D.U.T.  
B
3.3  
μF  
VDD  
3.3  
μF  
1000  
μF  
B
VDD  
25  
Ω
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
ton  
toff  
tdoff  
V(BR)DSS  
tr  
tf  
tdon  
VD  
90%  
10%  
90%  
IDM  
10%  
VGS  
VDS  
ID  
0
0
VDD  
VDD  
90%  
10%  
AM01472v1  
AM01473v1  
DocID024520 Rev 3  
9/22  
Package mechanical data  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
specifications, grade definitions and product status are available at: www.st.com.  
ECOPACK® is an ST trademark.  
10/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
2
Package mechanical data  
4.1  
D PAK, STB28NM60ND  
Figure 24. D²PAK (TO-263) drawing  
0079457_T  
DocID024520 Rev 3  
11/22  
Package mechanical data  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Table 8. D²PAK (TO-263) mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
b2  
c
c2  
D
D1  
E
10.40  
E1  
e
8.50  
2.54  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.4  
V2  
0°  
8°  
Figure 25. D²PAK footprint(a)  
16.90  
12.20  
5.08  
1.60  
3.50  
9.75  
Footprint  
a. All dimension are in millimeters  
12/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Package mechanical data  
4.2  
TO-220FP, STF28NM60ND  
Figure 26. TO-220FP drawing  
7012510_Rev_K_B  
DocID024520 Rev 3  
13/22  
Package mechanical data  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Table 9. TO-220FP mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
B
4.4  
2.5  
4.6  
2.7  
D
2.5  
2.75  
0.7  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
1
F1  
F2  
G
1.70  
1.70  
5.2  
G1  
H
2.7  
10  
10.4  
L2  
L3  
L4  
L5  
L6  
L7  
Dia  
16  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
16.4  
9.3  
3
3.2  
14/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Package mechanical data  
4.3  
TO-220, STP28NM60ND  
Figure 27. TO-220 type A drawing  
ꢀꢀꢁꢄꢊꢋꢋBW\SH$B5HYB7  
DocID024520 Rev 3  
15/22  
 
Package mechanical data  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Table 10. TO-220 type A mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
b1  
c
D
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
3.50  
3.93  
16.40  
28.90  
Q
P
3.75  
2.65  
3.85  
2.95  
16/22  
DocID024520 Rev 3  
 
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Package mechanical data  
4.4  
TO-247, STW28NM60ND  
Figure 28. TO-247 drawing  
0075325_G  
DocID024520 Rev 3  
17/22  
Package mechanical data  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Table 11. TO-247 mechanical data  
mm.  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
b
4.85  
2.20  
1.0  
5.15  
2.60  
1.40  
2.40  
3.40  
0.80  
20.15  
15.75  
5.60  
14.80  
4.30  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
5.30  
14.20  
3.70  
D
E
e
5.45  
18.50  
5.50  
L
L1  
L2  
P  
R  
S
3.55  
4.50  
5.30  
3.65  
5.50  
5.70  
18/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Packing mechanical data  
5
Packing mechanical data  
Figure 29. Tape  
10 pitches cumulative  
tolerance on tape +/- 0.2 mm  
P0  
D
Top cover  
tape  
P2  
T
E
F
W
K0  
B1  
B0  
For machine ref. only  
including draft and  
A0  
D1  
P1  
radii concentric around B0  
User direction of feed  
R
Bending radius  
User direction of feed  
AM08852v1  
DocID024520 Rev 3  
19/22  
Packing mechanical data  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Table 12. D²PAK (TO-263) tape and reel mechanical data  
Tape  
mm  
Reel  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
D
10.5  
15.7  
1.5  
10.7  
15.9  
1.6  
A
B
C
D
G
N
T
330  
1.5  
12.8  
20.2  
24.4  
100  
13.2  
26.4  
30.4  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base qty  
Bulk qty  
1000  
1000  
50  
T
0.25  
23.7  
0.35  
24.3  
W
Figure 30. Reel  
T
REEL DIMENSIONS  
40mm min.  
Access hole  
At sl ot location  
B
D
C
N
A
G measured at hub  
Full radius  
Tape slot  
in core for  
tape start 25 mm min.  
width  
AM08851v2  
20/22  
DocID024520 Rev 3  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
Revision history  
6
Revision history  
Table 13. Document revision history  
Date  
Revision  
Changes  
15-Apr-2013  
1
First release.  
– Document status changed from preliminary to production  
data  
– Modified: typical values in Table 6 and 7  
– Added: Section 2.1: Electrical characteristics (curves)  
– Updated: Table 10 and Figure 27  
– Minor text changes  
25-Nov-2013  
05-May-2014  
2
3
– Modified: EAS value in Table 4  
– Minor text changes  
DocID024520 Rev 3  
21/22  
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND  
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DocID024520 Rev 3  

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