STW29NK50ZD [STMICROELECTRONICS]
N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET; N沟道500 V - 0.11з - 29A TO- 247快速二极管SuperMESH⑩ MOSFET
| 型号： | STW29NK50ZD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET |
| 文件： | 总7页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW29NK50ZD
N-CHANNEL 500 V - 0.11Ω - 29A TO-247
Fast Diode SuperMESH™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
P
W
DSS
DS(on)
STW29NK50ZD 500 V < 0.15 Ω
29 A 350 W
■ TYPICAL R (on) = 0.11 Ω
DS
■ HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
3
2
1
TO-247
■ FAST INTERNAL RECOVERY TIME
DESCRIPTION
The Fast SuperMesh™ series associates all ad-
vantages of reduced on-resistance, zener gate
protection and very goog dv/dt capability with a
Fast body-drain recovery diode. Such series com-
plements the “FDmesh™” Advanced Technology.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HID BALLAST
■ ZVS PHASE-SHIFT FULL BRIDGE
Table 2: Order Codes
PART NUMBER
MARKING
PACKAGE
PACKAGING
STW29NK50ZD
W29NK50ZD
TO-247
TUBE
Rev. 2
December 2004
1/7
STW29NK50ZD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
500
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 KΩ)
500
V
DGR
GS
V
Gate- source Voltage
± 30
29
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
18.27
116
A
D
C
I
(*)
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
350
W
C
Derating Factor
2.77
6000
4.5
W/°C
V
V
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
Peak Diode Recovery voltage slope
ESD(G-S)
dv/dt (1)
V/ns
T
T
Storage Temperature
Operating Junction Temperature
stg
-55 to 150
°C
j
(*) Pulse width limited by safe operating area
(1) I ≤ 29 A, di/dt≤ 200 A/µs, VDD≤ V
, T ≤ T
(BR)DSS J JMAX
SD
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Max
0.36
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
°C/W
°C
T
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
29
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
500
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Condition
Igs= ± 1mA (Open Drain)
Min.
Typ.
Max
Unit
BV
Gate-Source Breakdown
Voltage
30
A
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/7
STW29NK50ZD
TABLE 7: ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source Breakdown
Voltage
I
= 1 mA, V = 0
500
S
(BR)DSS
D
GS
I
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125°C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
Gate-body Leakage
V
= ± 20 V
± 10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 150 µA
3
4.5
V
Gate Threshold Voltage
3.75
0.11
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10 V, I = 14.5 A
0.15
Ω
DS(on
D
Table 8: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 15 V, I = 14.5 A
28
S
fs
DS
DS
D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 25 V, f = 1 MHz, V = 0
6000
570
155
pF
pF
pF
iss
GS
oss
rss
t
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
V
R
= 400 V, I = 14.5 A,
= 4.7 Ω, V = 10 V
GS
TBD
TBD
TBD
TBD
ns
ns
ns
ns
d(on)
DD
D
t
r
G
t
(Resistive Load see Figure 4))
d(off)
Fall Time
t
f
Q
V
V
= 480 V, I = 14.5 A,
= 10 V
180
TBD
TBD
200
nC
nC
nC
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DD
GS
D
Q
gs
gd
Q
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
29
116
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 29 A, V
= 0
GS
Forward On Voltage
1.6
V
SD
SD
t
rr
= 29 A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
µC
A
SD
Q
V
= 30V, T = 25°C
rr
DD
j
I
(see test circuit Figure 5)
RRM
t
Q
I
V
= 29 A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
µC
A
rr
SD
= 30V, T = 150°C
rr
DD
j
I
(see test circuit Figure 5)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
3/7
STW29NK50ZD
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 6: Unclamped Inductive Wafeform
Figure 4: Switching Times Test Circuit For Re-
sistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
4/7
STW29NK50ZD
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
TYP
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
5/7
STW29NK50ZD
Table 10: Revision History
Date
Revision
Description of Changes
05-Feb-2004
06-Dec-2004
1
2
First Release.
Some electrical value changed
6/7
STW29NK50ZD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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www.st.com
7/7
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