STW32N65M5 [STMICROELECTRONICS]
N-channel 650 V, 0.095 Ω, 24 A, MDmesh⢠V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247; N沟道650 V， 0.095 I© ， 24 A， MDmeshâ ?? ¢在D²PAK ， I²PAK V功率MOSFET ， TO- 220FP ， TO- 220 ， TO- 247
| 型号： | STW32N65M5 |
| 厂家： | 
ST |
| 描述： | N-channel 650 V, 0.095 Ω, 24 A, MDmesh⢠V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247 |
| 文件： | 总22页 (文件大小：1278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB32N65M5, STF32N65M5, STI32N65M5
STP32N65M5, STW32N65M5
N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
Features
VDSS
TJmax
@
Order codes
RDS(on) max
ID
3
3
1
2
3
1
2
STB32N65M5
STF32N65M5
STI32N65M5
STP32N65M5
STW32N65M5
710 V
710 V
710 V
710 V
710 V
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
24 A
24 A(1)
24 A
1
D²PAK
I²PAK
TO-220FP
24 A
24 A
1. Limited only by maximum temperature allowed
3
3
2
2
1
1
■ Worldwide best R
* area
DS(on)
TO-220
TO-247
■ Higher V
rating
DSS
■ High dv/dt capability
Figure 1.
Internal schematic diagram
■ Excellent switching performance
■ Easy to drive
$ꢅꢆꢇ
■ 100% avalanche tested
Applications
■ Switching applications
'ꢅꢁꢇ
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
Device summary
Order codes
Marking
Package
D²PAK
Packaging
STB32N65M5
STF32N65M5
STI32N65M5
STP32N65M5
STW32N65M5
32N65M5
32N65M5
32N65M5
32N65M5
32N65M5
Tape and reel
Tube
TO-220FP
I²PAK
Tube
TO-220
TO-247
Tube
Tube
October 2011
Doc ID 15316 Rev 4
1/22
www.st.com
22
Contents
STB/F/I/P/W32N65M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
TO-220, D²PAK
Unit
TO-220FP
TO-247, I²PAK
VGS
ID
Gate- source voltage
25
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
24
15
24(1)
15 (1)
96 (1)
35
A
A
ID
(2)
IDM
96
A
PTOT
IAR
Total dissipation at TC = 25 °C
Max current during repetitive or single pulse
150
W
8
A
avalanche (pulse width limited by TJMAX
)
Single pulse avalanche energy
EAS
650
15
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
VISO
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
Tstg
Tj
Storage temperature
- 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 24 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
D²PAK TO-220FP I²PAK TO-220 TO-247
Unit
Thermal resistance junction-
case max
Rthj-case
Rthj-amb
Rthj-pcb
Tl
0.83
3.6
0.83
°C/W
°C/W
°C/W
°C
Thermal resistance junction-
ambient max
62.5
50
Thermal resistance junction-pcb
max
30
Maximum lead temperature for
soldering purpose
300
Doc ID 15316 Rev 4
3/22
Electrical characteristics
STB/F/I/P/W32N65M5
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
650
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
25 V
100
5
nA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
3
4
VGS = 10 V, ID = 12 A
0.095 0.119
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
3320
75
pF
VDS = 100 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
-
pF
pF
Reverse transfer
capacitance
5
Equivalent
capacitance time
related
(1)
Co(tr)
VGS = 0, VDS = 0 to 520 V
-
210
pF
Equivalent
capacitance energy
related
(2)
Co(er)
VGS = 0, VDS = 0 to 520 V
f = 1 MHz open drain
-
-
70
2
-
-
pF
Intrinsic gate
resistance
RG
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 12 A,
VGS = 10 V
72
17
29
nC
nC
nC
-
-
(see Figure 20)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(off)
Turn-off delay time
Rise time
53
12
29
16
ns
ns
ns
ns
VDD = 400 V, ID = 15 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
tr
tc
tf
-
-
Cross time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
24
96
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 24 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
375
6
ns
µC
A
ISD = 24 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 60 V (see Figure 21)
IRRM
33
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 24 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21)
440
8
ns
µC
A
Qrr
IRRM
36
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15316 Rev 4
5/22
Electrical characteristics
STB/F/I/P/W32N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK, I²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK, I²PAK
AM05448v1
I
D
(A)
10
10µs
100µs
1ms
10ms
1
Tj=150°C
Tc=25°C
Sinlge
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM05449v1
I
D
(A)
10
1
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
AM05450v1
I
D
(A)
10µs
10
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Sinlge
pulse
0.1
10
VDS(V)
0.1
1
100
6/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM05451v1
AM05452v1
I
D
(A)
I
D
(A)
V
GS=10V
V
DS=20V
50
50
40
30
20
40
30
20
6V
5V
10
0
10
0
5
2
20
25
V
DS(V)
8
10
0
10
15
30
0
4
6
V
GS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM05457v1
560
AM05454v1
V
(V)
GS
R
DS(on)
(Ω)
V
DD=520V
=12A
V
GS
12
480
400
320
240
160
VDS
0.111
ID
10
8
0.091
0.071
ID=12A
V
GS=10V
6
0.051
4
2
0
0.031
80
0
(nC)
0.011
10
15
20
5
25
40
80
Qg
ID(A)
0
20
60
0
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM05455v1
AM05456v1
C
Eoss
(pF)
(µJ)
14
10000
1000
12
10
8
Ciss
100
10
1
6
Coss
Crss
4
2
0
0.1
100
200
400 500
600
1
10
V
DS(V)
0
100
300
VDS(V)
Doc ID 15316 Rev 4
7/22
Electrical characteristics
STB/F/I/P/W32N65M5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature
AM05459v1
AM05460v1
V
GS(th)
R
DS(on)
(norm)
(norm)
1.10
2.1
1.9
1.7
1.5
1.3
1.1
1.00
0.90
0.80
0.9
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J(°C)
0
25 50 75
TJ(°C)
100
100
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B
vs temperature
VDSS
AM05461v1
AM05453v1
BVDSS
(norm)
1.07
V
(V)
SD
TJ=-50°C
1.2
1.05
1.03
1.01
1.0
0.8
0.6
TJ=25°C
0.99
0.97
TJ=150°C
0.4
0.2
0.95
0.93
0
0
-50
-25
10
20
30
40
50 ISD(A)
0
25 50 75
TJ(°C)
100
150
Figure 18. Switching losses vs gate resistance
(1)
AM05458v1
E
(μJ)
ID=15A
VCL=400V
VGS=10V
Eon
400
300
Eoff
200
100
0
20
30
40
10
RG(Ω)
0
1. Eon including reverse recovery of a SiC diode
8/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
Concept waveform for Inductive Load Turn-off
V(BR)DSS
Id
VD
90%Vds
90%Id
Tdelay-off
IDM
Vgs
90%Vgs
10%Vds
on
ID
Vgs(I(t))
VDD
VDD
10%Id
Vds
Trise
Tfall
Tcross -over
AM01472v1
AM05540v2
Doc ID 15316 Rev 4
9/22
Package mechanical data
STB/F/I/P/W32N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Package mechanical data
Table 8.
Dim.
D²PAK (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
Doc ID 15316 Rev 4
11/22
Package mechanical data
Figure 25. D²PAK (TO-263) drawing
STB/F/I/P/W32N65M5
0079457_S
(a)
Figure 26. D²PAK footprint
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
12/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
Min.
mm
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 27. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 15316 Rev 4
13/22
Package mechanical data
STB/F/I/P/W32N65M5
Table 10. I²PAK (TO-262) mechanical data
mm.
typ
DIM.
min.
max.
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
Figure 28. I²PAK (TO-262) drawing
0004982_Rev_H
14/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Package mechanical data
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 15316 Rev 4
15/22
Package mechanical data
Figure 29. TO-220 type A drawing
STB/F/I/P/W32N65M5
0015988_typeA_Rev_S
16/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Package mechanical data
Table 12. TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
e
5.45
18.50
5.50
L
14.20
3.70
14.80
4.30
L1
L2
∅P
∅R
S
3.55
4.50
3.65
5.50
Doc ID 15316 Rev 4
17/22
Package mechanical data
Figure 30. TO-247 drawing
STB/F/I/P/W32N65M5
0075325_F
18/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Packaging mechanical data
5
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Doc ID 15316 Rev 4
19/22
Packaging mechanical data
Figure 31. Tape
STB/F/I/P/W32N65M5
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 32. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
AM08851v2
Full radius
Tape slot
in core for
tape start 25 mm min.
width
20/22
Doc ID 15316 Rev 4
STB/F/I/P/W32N65M5
Revision history
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
16-Jan-2009
01-Sep-2009
30-Sep-2009
1
2
3
First release
Document status promoted from preliminary data to datasheet.
Corrected VGS value on Table 2: Absolute maximum ratings
Co(er) and Co(tr) values changed in Table 5: Dynamic
Table 6: Switching times parameters updates
Figure 24: Switching time waveform has been corrected
Minor text changes
Section 4: Package mechanical data has been modified. Added:
– Table 8: D²PAK (TO-263) mechanical data, Figure 25: D²PAK (TO-
263) drawing and Figure 26: D²PAK footprint;
– Table 9: TO-220FP mechanical data,and Figure 27: TO-220FP
drawing;
06-Oct-2011
4
– Table 10: I²PAK (TO-262) mechanical data,and Figure 28: I²PAK
(TO-262) drawing;
– Table 11: TO-220 type A mechanical data,and Figure 29: TO-220
type A drawing;
– Table 12: TO-247 mechanical data,and Figure 30: TO-247
drawing;
Section 5: Packaging mechanical data has been modified. Added:
– Table 13: D²PAK (TO-263) tape and reel mechanical data,
Figure 31: Tape and Figure 32: Reel;
Doc ID 15316 Rev 4
21/22
STB/F/I/P/W32N65M5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
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