STW30NM60D [STMICROELECTRONICS]
N-CHANNEL 600V - 0.125 - 30A TO-247 Fast Diode MDmesh MOSFET; N沟道600V - 0.125 - 30A TO- 247快速二极管的MDmesh MOSFET
| 型号： | STW30NM60D |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 0.125 - 30A TO-247 Fast Diode MDmesh MOSFET |
| 文件： | 总9页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW30NM60D
N-CHANNEL 600V - 0.125Ω - 30A TO-247
Fast Diode MDmesh™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
DSS
R
I
D
DS(on)
STW30NM60D
600 V
< 0.145 Ω
30 A
■ TYPICAL R (on) = 0.125 Ω
DS
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE RATED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
■ FAST INTERNAL RECOVERY DIODE
TO-247
DESCRIPTION
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STW30NM60D
W30NM60D
TO-247
TUBE
Rev. 3
June 2004
1/9
STW30NM60D
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
600
600
± 30
30
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
Gate- source Voltage
V
GS
I
D
Drain Current (continuous) at T = 25°C
A
C
I
Drain Current (continuous) at T = 100°C
18.9
120
312
2.5
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
20
T
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤30A, di/dt ≤400A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
Table 4: Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.4
62.5
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
T
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
15
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
740
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source Breakdown
Voltage
I
D
= 1 mA, V = 0
600
V
(BR)DSS
GS
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125°C
10
100
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 20 V
± 10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 250 µA
3
5
V
Gate Threshold Voltage
4
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10 V, I = 15 A
0.125
0.145
Ω
DS(on
D
2/9
STW30NM60D
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
= 15 V , I = 15 A
16
S
DS
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
V
= 25 V, f = 1 MHz,
= 0
2520
800
75
pF
pF
pF
iss
DS
C
oss
GS
C
rss
C
(3) Equivalent Output
V
V
= 0 V, V = 0 to 480 V
390
pF
OSS eq
.
GS
DS
Capacitance
t
t
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
= 300 V, I = 15 A,
32
33
75
35
ns
ns
ns
ns
d(on)
DD
D
t
r
R = 4.7 Ω, V = 10 V
G GS
(see Figure 15)
d(off)
t
f
Q
V
V
= 480 V, I = 30 A,
= 10 V
82
24
42
115
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
g
DD
D
Q
gs
gd
GS
Q
(see Figure 18)
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
30
120
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 30 A, V
= 0
GS
Forward On Voltage
1.5
V
SD
SD
t
rr
= 30 A, di/dt = 100 A/µs
= 50V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
165
1.1
14
ns
nC
A
SD
Q
V
DD
(see Figure 16)
rr
I
RRM
t
Q
I
= 30 A, di/dt = 100 A/µs
= 50V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
312
3.3
21
ns
nC
A
rr
SD
V
DD
(see Figure 16)
rr
j
I
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80% V
.
DSS
oss eq.
oss
DS
3/9
STW30NM60D
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
4/9
STW30NM60D
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
5/9
STW30NM60D
Figure 14: Unclamped Inductive Load Test Cir-
cuit
Figure 17: Unclamped Inductive Wafeform
Figure 15: Switching Times Test Circuit For
Resistive Load
Figure 18: Gate Charge Test Circuit
Figure 16: Test Circuit For Inductive Load
Switching and Diode Recovery Times
6/9
STW30NM60D
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
TYP
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
7/9
STW30NM60D
Table 9: Revision History
Date
Revision
Description of Changes
The document change from “ADVANCED” to “COMPLETE”.
New Stylesheet.
24-June-2004
3
Rds(on) Max@10V changed. See Table 6.
8/9
STW30NM60D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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9/9
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