STW3100 [STMICROELECTRONICS]
TRANSCEIVER MODULE; 收发器模块
| 型号： | STW3100 |
| 厂家： | 
ST |
| 描述： | TRANSCEIVER MODULE |
| 文件： | 总7页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW3100
TRANSCEIVER MODULE
REV. 1.0 - PRODUCT PREVIEW
1
FEATURES
■ Triple-band (EGSM900 / DCS1800 / PCS1900).
■ Supports data transfer applications in multi-
slots GPRS class-12
■ EDGE Receive capability
■ Integrates:
– BiCMOS6G RF transceiver
– 3 Receive Band Pass filters
LFBGA104 (7x7x1.4mm)
ORDERING NUMBER: STW3100
– 3 Receive Matching Network between filters
output & LNA input
– PLL loop filter
– Decoupling / DC blocking capacitors
■ Insures compatibility with different Power
–
2 kV Human Body Model
Modules
■ Control interfaces:
– STW3102 Power Module
– Power Module coming from the competition
■ RF interfaces:
– Towards Baseband: 3-wire serial interface
with a Clock (Clk), enable (En) and a data line
(Data).
– Single-ended 50 ohms acceses
– 3 in Rx
– Towards Front-End functions 3 control pins
– 2 in Tx
2
DESCRIPTION
■ Noise Figure in
In a 1.4 x 7 x 7mm low-profile Ball Grid Array pack-
age, the new modules integrate all of the key func-
tions, requiring only a 26MHz crystal and a power
amplifier module (PA+antenna switch functions) to
build a complete triple-band solution from antenna
to base band interface. Two versions are offered:
type STw3100 addresses the European
EGSM900, DCS1800, and PCS1900 bands while
the STw3101 targets the US GSM850, DCS1800,
and PCS1900 bands. The transceiver modules
are compatible with the STMicroelectronics
STw3102 power-amplifier module and most of the
standard power amplifiers available on the market.
– Low band : 5.5 dB typ
– Hign bands : 6 dB typ
■ Transmit output level:
– EGSM band : 1 or 5 dBm typ
– DCS & PCS bands : 1 or 5 dBm typ
■ Standard Rx / Tx differential I/Q analogue
interface
■ Supply voltage range: 2.7V min / 3.3V max
■ Embedded voltage regulators to supply on chip
RF functions
■ Package:
– Full lead-free
– 104 -BGA 7 x 7 pack
■ Temperature range:
– Case operating temperature range:
-20°/ +70°C (fulfil specification)
■ ESD handling:
February 2004
1/7
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
STW3100
3
ELECTRICAL CHARACTERISTICS
3.1 DC SECTION
Limiting value
Symbol
Parameter
Test Condition
Min.
Typ.
25
Max.
Unit
Absolute Maximum Ratings
VCC
Tstg
Maximum voltage supply
Storage Temperature
3.6
125
500
V
-55
°C
Pdiss
Maximum Power dissipation
mW
Operating Functionality range
Top
Operating Temperature
-40
2.7
25
85
°C
V
VCC
Supply voltage on Vcc_SYN and
Vcc_RX/TX pins
3.3
Operating Specified range
Top
Operating Temperature
-20
2.7
25
70
°C
V
VCC
Supply voltage on Vcc_SYN and
Vcc_RX/TX pins
3.3
DC characteristics
VCC = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Pin Vcc_syn
Icc
Icc
Icc
Supply current in power off mode
Supply current in REF mode
Supply in Syn mode
10
3
µA
mA
mA
35
Pin Vcc_RX/TX
Icc
Icc
Icc
Supply current in power off mode
10
35
88
µA
mA
mA
Supply current in RX mode
Supply current in TX mode GSM
bands
Icc
Supply current in TX mode DCS
or PCS bands
88
mA
Pin Vccreg_RFVCO
Vccreg Internal regulated supply voltage
Pin Vccreg_TXVCO
2
2
V
V
V
Vccreg Internal regulated supply voltage
Pin Vccreg_Digital
Vccreg Internal regulated supply voltage
1.8
2/7
STW3100
3.2 Receive Section
Vcc = 2.7V;
Symbol
Parameter
Input Frequency
Test Condition
EGSM900
Min.
925
Typ.
Max.
Unit
fRX2
fRX3
fRX4
Zin
960
1880
1990
MHz
GSM1800
1805
1930
GSM1900
Input impedance
Single-Ended
50
1.8
1
Ω
VSWR_in Input VSWR into 50 ohm
2.3
2
Ripple
Gain Flatness over the Frf
band
dB
dB
Gmax
Total max gain
in 2Vpp Mode
in 4Vpp Mode
74
80
79
85
∆G
Gain range
66
3
dB
AGC gain step
AGC linearity
Noise figure DSB
-
-
-1
+1
dB
dB
NF
ICP-1dB
IIP3
Low Band
5.5
6
High Band
1dB Input Compression Point
@ Low gain, 0kHz offset
Low Band
-23
-26
-14
-14
+44
-20
-23
-10
-12
dBm
dBm
High Band
Third Order Input Intercept
Point @ High Front-end gain
Low Band
High Band
nd
IIP2
C/N
High Front-end gain
dBm
dB
2
Order Input Intercept Point
Out-of-band Blocking (a, b, c, d) Pwanted= -100 dBm,
9
in Low-Band & (a , d) in High-
Band
P
interf= -1 dBm
(1 dB Insertion Losses for
antenna switch)
C/N
C/N
Out-of-band Blocking (c, b) in
High-Band
P
P
wanted= -100 dBm,
interf= -13 dBm
9
9
dB
dB
In-Band Blocking @
|F-Fo|> 3 MHz
Pwanted= -100 dBm,
P
P
interf= -24 dBm (LB)
interf= -27 dBm (HB)
C/N
C/N
In-Band Blocking @
1.6 MHz < |F-Fo| < 3 MHz
Pwanted= -100 dBm,
interf= -34 dBm
9
9
dB
dB
P
In-Band Blocking @
600 kHz < |F-Fo| < 1.6 MHz
Pwanted= -100 dBm,
interf= -44 dBm
P
BW_GMSK 3 dB Channel bandwidth
BW_EDGE
after calibration
90
110
110
140
kHz
dB
Att GMSK Channel response attenuation
Mode
@ 200 kHz
@ 400 kHz
@ 600 kHz
15
50
58
18
51
62
Att EDGE Channel response attenuation
dB
Mode
@ 200 kHz
@ 400 kHz
@ 600 kHz
4
45
52
7
48
55
Tdelay
Spurs
Group delay variation
Between 0 & 67.7 kHz
1.8
2.5
us
Spurious emission @ RF input
@ 9 kHz −1 GHz
@ 1 GHz − 12 75 GHz
dBm
-57
-47
3/7
STW3100
3.2 Receive Section (continued)
Vcc = 2.7V;
Symbol
∆GIQ
Parameter
Test Condition
Min.
-1
Typ.
Max.
+1
Unit
dB
I & Q Gain mismatch
∆Φ IQ
VCm
I & Q quadrature mismatch
Output Common mode voltage
-5
+5
deg
V
1.2
1.35
20
1.5
VSwing
Maximum single ended Output 4Vpp mode
Voltage
0.75
0.375
Vpk
2Vpp mode
Voffset
Toffset
Differential Output
OffsetVoltage
after calibration
-150
+150
200
mV
us
Offset voltage calibration
settling time (during the locking
time phase)
3.3 Transmit Section
Vcc = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Pins ITX(+), ITX(-), QTX(+) and QTX(-)
Fmod
Modulation frequency range
3dB low pass
cut-off frequency
1
-
-
MHz
VDC mod
Vmod
Input Common mode voltage
Modulation level
0.8
0.8
1
1
1.4
1.2
V
Single ended;
Vpp
peak to peak value
VDC offset
RIN
Input DC offset permissible
Dynamic input resistance
Dynamic input capacitance
Differential
10
-
mV
kΩ
pF
Single ended
Single ended
differential
10
-
-
-
CIN
20
56
RF Tx performances
fTX2
fTX3
fTX4
Zout
Output frequency
EGSM900
GSM1800
GSM1900
Single-Ended
880
1710
1850
915
1785
1910
MHz
Output impedance
50
1.5
+1
Ω
VSWR_out Output VSWR into 50 ohm
2
POUTGMSK Output power into 50 ohm load
Set to Pout _0
Set to Pout _1
Low Band
dBm
+5
ACPR400
N20MHz
ACPR @ 400 kHz offset
(BW = 30 kHz)
-65
-63
-164
-156
1.2
-62
-61
dBc/
BW
High Band
Low Band
Output Phase Noise @ 20 MHz
offset
-159
-152
2.5
dBc/
Hz
High Band
RMS
RMS phase error
deg
dBc
nd
H2LB
-20
2
3
Harmonic level
Harmonic level
rd
H3LB
-20
dBc
IMout
Crej
Unwanted sideband suppression
Carrier rejection
-45
-40
-35
-32
dBc
dBc
4/7
STW3100
3.4 Frequency generation Section
Vcc = 2.7V;
Symbol
Parameter
Test Condition
φpeak < 20°
Min.
Typ.
Max.
Unit
RF synthesizer
Tlock_time
Settling Time
150
200
us
EGSM900 Frequency Range
DCS1800 Frequency Range
DCS1900 Frequency Range
Channel spacing
880.2
1710.2
1850.2
959.8
1879.8
1989.8
MHz
MHz
MHz
kHz
ppm
Fchannnel
Fstep
200
Synthesizer frequency step
(Fract-N PLL)
0.0022
DCXO
Fref
Reference Frequency (quartz
input)
26
1
MHz
Frange crystal Capacitor bank frequency range
Fstep crystal Capacitor bank step
-30
-
+30
-
ppm
ppm
5/7
STW3100
mm
inch
OUTLINE AND
MECHANICAL DATA
DIM.
MIN.
TYP. MAX. MIN.
TYP. MAX.
A
A1
A2
b
1.21
0.15
0.048
0.006
1.02
0.040
0.25
6.85
0.30
7.00
5.50
7.00
5.50
0.50
0.75
0.35 0.010 0.012 0.014
D
7.15 0.270 0.275 0.281
D1
E
0.216
6.85
7.15 0.270 0.275 0.281
E1
e
0.216
0.020
0.029
Body: 7 x 7 x 1.4mm
F
ddd
eee
fff
0.08
0.15
0.05
0.003
0.006
0.002
LFBGA104
Low Fine Ball Grid Array
7578709 A
6/7
STW3100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
STMicroelectronics GROUP OF COMPANIES
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7/7
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