STW30NM60N [STMICROELECTRONICS]
N-channel 600 V, 0.1 Ω, 25 A, MDmesh? II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK; N沟道600 V , 0.1 Ω , 25 A ,的MDmesh II ™功率MOSFET TO- 220 , TO- 220FP , TO- 247 , D2PAK , I2PAK型号: | STW30NM60N |
厂家: | ST |
描述: | N-channel 600 V, 0.1 Ω, 25 A, MDmesh? II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK |
文件: | 总18页 (文件大小:769K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STB30NM60N,STI30NM60N,STF30NM60N
STP30NM60N, STW30NM60N
N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET
TO-220, TO-220FP, TO-247, D2PAK, I2PAK
Features
RDS(on)
max
VDSS @
TJmax
Type
ID
PW
3
3
1
2
1
STB30NM60N 650 V
STI30NM60N 650 V
<0.13Ω
<0.13Ω
<0.13Ω 25A(1) 40 W
25A
25A
190 W
190 W
D²PAK
I²PAK
3
2
1
STF30NM60N 650 V
STP30NM60N 650 V
STW30NM60N 650 V
TO-247
<0.13Ω
<0.13Ω
25A
25A
190 W
190 W
3
3
1. Limited only by maximum temperature allowed
2
2
1
1
■ 100% avalanche tested
TO-220FP
TO-220
■ Low input capacitance and gate charge
■ Low gate input resistance
Figure 1.
Internal schematic diagram
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB30NM60N
STI30NM60N
STF30NM60N
STP30NM60N
STW30NM60N
30NM60N
30NM60N
30NM60N
30NM60N
30NM60N
D²PAK
I²PAK
Tape and reel
Tube
TO-220FP
TO-220
TO-247
Tube
Tube
Tube
July 2008
Rev 2
1/18
www.st.com
18
Contents
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
I²PA
K
TO-220
TO-247 D²PAK TO-220FP
VDS
VGS
Drain-source voltage (VGS=0)
Gate-source voltage
600
30
V
V
Drain current (continuous) at
TC = 25 °C
25 (1)
ID
25
A
A
Drain current (continuous) at
TC = 100 °C
15.8(1)
ID
15.8
(2)
100 (1)
40
Drain current (pulsed)
100
190
A
W
IDM
PTOT Total dissipation at TC = 25 °C
dv/dt (3)
Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
VISO
--
2500
V
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating juncion temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 25A, di/dt ≤ 400A/µs, VDD =80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
TO-220 I²PAK TO-247 D²PAK TO-220FP Unit
Thermal resistance junction-case
max
Rthj-case
Rthj-pcb
Rthj-amb
Tl
0.66
3.1
--
°C/W
°C/W
°C/W
°C
Thermal resistance junction-pcb
max
--
--
--
30
--
Thermal resistance junction-amb
max
62.5
50
62.5
Maximum lead temperature for
soldering purposes
300
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
IAR
12
A
Single pulse avalanche energy
EAS
900
mJ
(starting Tj = 25°C, ID = IAR, VDD = 50V)
3/18
Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
600
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125°C
100
Gate-body leakage
IGSS
VGS
=
20 V
100
4
nA
V
current (VDS = 0)
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
2
3
VGS = 10 V, ID = 12.5 A
0.1
0.13
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward
transconductance
(1)
gfs
VDS = 15 V, ID = 12.5 A
25
S
Input capacitance
Ciss
Coss
Crss
2700
210
22
pF
pF
pF
Output capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
Reverse transfer
capacitance
Coss eq. Equivalent Output
capacitance
VGS = 0, VDS = 0 to 480 V
f=1MHz Gate DC Bias=0
66
3
pF
Rg
Gate input resistance Test signal level=20 mV
open drain
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD =480 V, ID = 25 A,
VGS = 10 V
91
14
50
nC
nC
nC
(see Figure 19)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
4/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
20
24
ns
ns
ns
ns
VDD = 300 V, ID = 12.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Turn-off-delay time
Fall time
125
70
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
Source-drain current
25
A
A
(1)
ISDM
Source-drain current (pulsed)
100
(2)
VSD
Forward on voltage
ISD = 25 A, VGS = 0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
540
10
ns
µC
A
ISD = 25 A, di/dt = 100 A/µs
Qrr
VDD= 100 V (see Figure 23)
IRRM
36
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, di/dt = 100 A/µs
VDD= 100 V Tj = 150°C
(see Figure 23)
630
12
ns
µC
A
Qrr
IRRM
36
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/18
Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 4. Safe operating area for TO-220FP
Figure 6. Safe operating area for TO-247
6/18
Figure 5. Thermal impedance for TO-220FP
Figure 7. Thermal impedance for TO-247
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM00052v1
AM00051v1
ID(A)
ID(A)
VGS=10V
30
5
4
3
2
1
0
25
5V
20
15
10
5
4V
0
0
5
10
15
20
25
30 VSD(V)
VGS(V)
0
2
4
6
8
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
AM00048v1
AM00046v1
Gfs(S)
30.5
R
DS(on)
(Ω)
0.135
0.115
0.095
0.075
0.055
0.035
0.015
TJ=-50°C
25°C
25.5
20.5
15.5
10.5
5.5
150°C
V
GS=10V
I
D
=12.5A
0.5
0
5
10
15
20
25
(A)
0
5
10
15
20
25
ID(A)
ID
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
AM00044v1
AM00045v1
V
GS(V)
C(pF)
10000
V
DD=480V
12
10
8
ID=25A
Ciss
1000
100
10
6
Coss
Crss
4
2
0
1
0
20
40
60
80
100
Qg(nC)
VGS(V)
0.1
1
10
100
7/18
Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
AM00043v1
AM00047v1
VGS(th)
(norm)
R
(norm)
DS(on)
1.1
1.05
1
2.1
ID=250µA
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.95
0.9
0.85
0.8
0.75
0.7
-50 -25
0
25
50
75 100 125
TJ(°C)
T
J
(°C)
-50
-25
0
25
50
75
100
125
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B
vs temperature
VDSS
AM00049v1
AM00050v1
BVDSS
(norm)
V
SD(V)
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
25°C
TJ=-50°C
1
150°C
0.8
0.6
0.4
0.2
0
0
10
20
-50
-25
0
25
50
75
100
125
TJ(°C)
ISD(A)
8/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Test circuits
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/18
Package mechanical data STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
TO-220FP mechanical data
mm.
Typ
inch
Typ.
Dim.
Min.
4.40
2.5
Max.
4.60
2.7
Min.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.95
2.40
10
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16
0.630
28.6
9.80
2.9
30.6
10.60
3.6
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
15.90
9
16.40
9.30
3.2
3
L3
L6
L7
Dia
1
2 3
L5
L2
L4
7012510-I
12/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data
TO-247 Mechanical data
mm.
Dim.
Min.
Typ
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
13/18
Package mechanical data STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
I²PAK (TO-262) mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
14/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data
D²PAK (TO-263) mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
15/18
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
23-Oct-2007
09-Jul-2008
1
2
First release.
Document status promoted: from preliminary data to datasheet.
17/18
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
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18/18
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STW34NM60ND
N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
STMICROELECTR
STW35N65M5
N-channel 650 V, 0.085 Ω, 27 A, MDmesh⢠V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMICROELECTR
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