STW18NM80 [STMICROELECTRONICS]
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET; N沟道800 V ， 0.25 I© ， 17 A， MDmes功率MOSFET
| 型号： | STW18NM80 |
| 厂家： | 
ST |
| 描述： | N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET |
| 文件： | 总21页 (文件大小：1054K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB18NM80, STF18NM80,
STP18NM80, STW18NM80
N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
RDS(on)
max
Order codes
VDSS
ID
3
3
2
1
STB18NM80
STF18NM80
STP18NM80
STW18NM80
800 V
800 V
800 V
800 V
< 0.295 Ω
< 0.295 Ω 17 A (1)
17 A
1
D²PAK
TO-220FP
< 0.295 Ω
< 0.295 Ω
17 A
17 A
1. Limited only by maximum temperature allowed
3
3
2
2
1
1
■ 100% avalanche tested
TO-220
■ Low input capacitance and gate charge
■ Low gate input resistance
TO-247
Application
Figure 1.
Internal schematic diagram
■ Switching applications
$ꢅꢆꢇ
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
'ꢅꢁꢇ
3ꢅꢈꢇ
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
D²PAK
Packaging
STB18NM80
STF18NM80
STP18NM80
STW18NM80
Tape and reel
TO-220FP
TO-220
18NM80
Tube
TO-247
May 2012
Doc ID 15421 Rev 5
1/21
This is information on a product in full production.
www.st.com
21
Contents
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
VDS
VGS
Drain-source voltage
800
30
V
V
Gate-source voltage
Drain current (continuous) at
TC = 25 °C
ID
17
17 (1)
A
A
Drain current (continuous) at
TC = 100 °C
ID
10.71
10.71(1)
(2)
IDM
Drain current (pulsed)
68
68 (1)
40
A
PTOT Total dissipation at TC = 25 °C
190
W
Insulation withstand voltage (RMS)
VISO from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
2500
V
Tstg
Tj
Storage temperature
-65 to 150
°C
°C
Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Rthj-pcb Thermal resistance junction-pcb
0.66
3.13
62.5
°C/W
°C/W
°C/W
62.5
50
30
Maximum lead temperature for
soldering purpose
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAS
4
A
Single pulse avalanche energy
EAS
600
mJ
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Doc ID 15421 Rev 5
3/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
2
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
800
V
VDS = 800 V,
10
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 800 V,Tc = 125 °C
100
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
30 V
100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8.5 A
3
4
5
V
Static drain-source
RDS(on)
0.25 0.295
Ω
on-resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS = 15 V, ID= 8.5 A
-
14
-
S
Input capacitance
Output capacitance
Ciss
Coss
Crss
2070
210
29
pF
pF
pF
VDS = 50 V, f = 1 MHz, VGS = 0
-
-
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
Coss eq.
VGS = 0, VDS = 0 to 640 V
-
-
316
4
-
-
pF
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
RG
Gate input resistance
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD = 640 V, ID = 17 A
70
13
40
nC
nC
nC
VGS = 10 V
-
-
(see Figure 17)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. . is defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq
oss
increases from 0 to 80% V
DSS
4/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
18
28
96
50
ns
ns
ns
ns
VDD = 400 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and
Figure 21)
-
-
Turn-off delay time
Fall time
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
Source-drain current
17
68
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 17 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
618
9.6
ns
µC
A
I
SD = 17 A, di/dt = 100
A/µs, VDD = 100 V,
Qrr
-
-
(see Figure 18)
IRRM
31.2
ISD = 17 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
822
13
ns
µC
A
di/dt = 100 A/µs,
Qrr
V
DD = 100 V, Tj=150°C
IRRM
31.8
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15421 Rev 5
5/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
Single
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-247
Figure 5.
Thermal impedance for TO-247
I
D
(A)
10µs
10
100µs
1ms
10ms
1
Tj=150°C
Tc=25°C
Single
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220FP
Figure 7.
Thermal impedance for TO-220FP
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
10
VDS(V)
0.1
1
100
6/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
I
D
(A)
I
D
(A)
V
GS=10V
40
35
30
25
20
15
10
V
DS=20V
40
35
30
25
7V
20
15
10
6V
5V
5
0
5
0
0
5
2
20
VDS(V)
8
10
VGS(V)
10
15
0
4
6
Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on-resistance
BVDSS
(norm)
R
DS(on)
(Ω)
ID=1mA
V
GS=10V
1.06
1.03
1.00
0.28
0.26
0.24
0.98
0.22
0.2
0.95
0.92
10
15
5
-50
-25
0
25 50 75
T
J
(°C)
0
ID(A)
100
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
V
(V)
GS
C
(pF)
700
600
500
400
V
GS
V
DD=640V
12
100000
ID=17A
VDS
10
8
10000
Ciss
1000
100
6
300
Coss
4
2
0
200
100
0
Crss
10
1
40
80
0.1
100
VDS(V)
0
20
60
Q
g(nC)
1
10
1000
Doc ID 15421 Rev 5
7/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs
vs temperature temperature
V
GS(th)
R
DS(on)
(norm)
(norm)
ID=250µA
2.1
1.10
ID=8.5A
VGS=10V
1.9
1.7
1.00
0.90
1.5
1.3
1.1
0.9
0.80
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
TJ(°C)
0
25 50 75
TJ(°C)
100
100
8/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 15421 Rev 5
9/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9.
Dim.
D²PAK (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 22. D²PAK (TO-263) drawing
Package mechanical data
0079457_T
Figure 23. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
Doc ID 15421 Rev 5
11/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Table 10. TO-220FP mechanical data
Dim.
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 24. TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 15421 Rev 5
13/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Table 11. TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 25. TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 15421 Rev 5
15/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Table 12. TO-247 mechanical data
Dim.
mm.
Typ.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅P
∅R
S
3.55
4.50
5.30
3.65
5.50
5.70
16/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 26. TO-247 drawing
Package mechanical data
0075325_G
Doc ID 15421 Rev 5
17/21
Packaging mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
5
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 27. Tape
Packaging mechanical data
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 28. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Doc ID 15421 Rev 5
19/21
Revision history
STB18NM80, STF18NM80, STP18NM80, STW18NM80
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
25-Feb-2009
07-Apr-2009
20-Apr-2009
09-Sep-2009
1
2
3
4
First release.
Section 4: Package mechanical data has been modified.
RDS(on) max value has been corrected.
Document status promoted from preliminary data to datasheet.
Figure 12: Gate charge vs gate-source voltage has been
updated.
25-May-2012
5
Minor text changes.
20/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 15421 Rev 5
21/21
相关型号：
STW19NM50N
N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
STMICROELECTR
STW19NM65N
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
STMICROELECTR
STW200NF03
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET
STMICROELECTR
STW20N95K5
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5⢠Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMICROELECTR
STW20NK70Z
N-CHANNEL 700V - 0.25W - 20A TO-247 Zener-Protected SuperMESH TM Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明