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STS8DNF3LL [STMICROELECTRONICS]

DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET; 双N沟道30V - 0.017欧姆 - 8A SO- 8低栅电荷STripFET⑩ II功率MOSFET
STS8DNF3LL
型号： STS8DNF3LL
厂家： ST    ST
描述：

DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
双N沟道30V - 0.017欧姆 - 8A SO- 8低栅电荷STripFET⑩ II功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 栅
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STS8DNF3LL  
DUAL N-CHANNEL 30V - 0.017 Ω - 8A SO-8  
LOW GATE CHARGE STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STS8DNF3LL  
30 V  
<0.020 Ω  
8 A  
■
■
■
■
TYPICAL R (on) = 0.017Ω  
DS  
OPTIMAL R (on) x Qg TRADE-OFF @ 4.5V  
DS  
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
DESCRIPTION  
This application specific Power MOSFET is the second  
generation of STMicroelectronis unique "Single Feature  
Size™" strip-based process. The resulting transistor  
shows the best trade-off between on-resistance and gate  
charge. When used as high and low side in buck  
regulators, it gives the best performance in terms of both  
conduction and switching losses. This is extremely  
important for motherboards where fast switching and  
high efficiency are of paramount importance.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY CPU CORE DC/DC  
CONVERTERS FOR MOBILE PC  
S
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
30  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
± 16  
8
V
Drain Current (continuous) at T = 25°C  
C
Single Operation  
I
D
A
Drain Current (continuous) at T = 100°C  
5
C
Single Operation  
I
(•)  
DM  
Drain Current (pulsed)  
32  
A
Total Dissipation at T = 25°C Dual operating  
2
1.6  
W
W
C
P
tot  
Total Dissipation at T = 25°C Single operating  
C
(•) Pulse width limited by safe operating area.  
October 2002  
1/8  
.
STS8DNF3LL  
THERMAL DATA  
Rthj-amb  
(*)Thermal Resistance Junction-ambient  
Single Operating  
Dual Operating  
78  
62.5  
150  
°C/W  
°C/W  
°C  
T
Thermal Operating Junction-ambient  
Storage Temperature  
j
T
stg  
-55 to 150  
°C  
(*)  
2
When mounted on FR-4 board with 0.5 in pad of Cu.  
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
D
GS  
V
30  
V
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 16 V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
= V  
I
I
= 250 µA  
Gate Threshold Voltage  
1
V
GS(th)  
DS  
GS  
D
V
V
= 10 V  
= 4.5 V  
= 4 A  
Static Drain-source On  
Resistance  
0.017  
0.020  
0.020  
0.024  
Ω
Ω
GS  
D
I
R
DS(on)  
= 4 A  
GS  
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
=15 V = 4 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
12.5  
S
DS  
DS  
= 25V, f = 1 MHz, V = 0  
C
iss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
800  
250  
60  
pF  
pF  
pF  
GS  
C
oss  
C
rss  
2/8  
STS8DNF3LL  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 15 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
= 4 A  
D
Turn-on Delay Time  
Rise Time  
18  
32  
ns  
ns  
t
DD  
d(on)  
= 4.7 Ω  
V
GS  
= 4.5 V  
t
r
G
(Resistive Load, Figure 1)  
Q
V
= 15 V I = 8 A V = 5 V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
12.5  
3.2  
4.5  
17  
nC  
nC  
nC  
g
DD  
D
GS  
Q
gs  
Q
(see test circuit, Figure 2)  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15 V  
I
= 4 A  
D
Turn-off Delay Time  
Fall Time  
21  
11  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
GS  
= 4.5 V  
t
G
f
(Resistive Load, Figure 1)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
8
32  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 8 A  
V
= 0  
GS  
V
Forward On Voltage  
1.2  
V
SD  
SD  
SD  
t
= 8 A  
di/dt = 100A/µs  
T = 150°C  
j
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
23  
17  
1.5  
ns  
nC  
A
rr  
Q
V
= 15 V  
rr  
DD  
I
(see test circuit, Figure 3)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedance  
3/8  
STS8DNF3LL  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/8  
STS8DNF3LL  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature.  
.
.
5/8  
STS8DNF3LL  
Fig. 1: Switching Times Test Circuits For Resistive  
Fig. 2: Gate Charge test Circuit  
Load  
Fig. 3: Test Circuit For Diode Recovery Behaviour  
6/8  
STS8DNF3LL  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
7/8  
STS8DNF3LL  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
8/8  

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