STS8DNF3LL_07 [STMICROELECTRONICS]
Dual N-channel 30V - 0.017OHM - 8A SO-8 Low gate charge STripFET TM II Power MOSFET; 双N沟道30V - 0.017OHM - 8A SO- 8低栅极电荷的STripFET TM II功率MOSFET
| 型号： | STS8DNF3LL_07 |
| 厂家： | 
ST |
| 描述： | Dual N-channel 30V - 0.017OHM - 8A SO-8 Low gate charge STripFET TM II Power MOSFET |
| 文件： | 总12页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS8DNF3LL
Dual N-channel 30V - 0.017Ω - 8A SO-8
Low gate charge STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STS8DNF3LL
30V
<0.020Ω
8A
■ Optimal R (on) x Qg trade-off @ 4.5V
DS
■ Conduction losses reduced
■ Switching losses reduced
S0-8
Description
This application specific Power MOSFET is the
second generation of STMicroelectronics unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STS8DNF3LL
S8DNF3LL
SO-8
Tape & reel
January 2007
Rev 10
1/12
www.st.com
12
Contents
STS8DNF3LL
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS8DNF3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (vgs = 0)
Gate- source voltage
30
16
V
V
Drain current (continuos) at TC = 25°C
single operating
ID
8
A
Drain current (continuos) at TC = 100°C
single operating
ID
5
A
A
(1)
IDM
Drain current (pulsed)
32
Total dissipation at TC = 25°C dual operating
Total dissipation at TC = 25°C single operating
2
W
W
PTOT
1.6
1. Pulse width limited by safe operating area
Table 2.
Thermal data
(1)Thermal resistance junction-ambient single
78
°C/W
operating
Rthj-a
62.5
°C/W
Thermal resistance junction-ambient dual operating
Thermal operating junction-ambient
TJ
150
°C
°C
Tstg Storage temperature
-55 to 150
1. Mounted on FR-4 board with 0.5 in2 pad of Cu.
3/12
Electrical characteristics
STS8DNF3LL
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
VDS = Max rating
30
V
Breakdown voltage
1
µA
µA
Zero gate voltage
IDSS
VDS=Max rating,
TC=125°C
Drain current (VGS = 0)
10
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
16V
100
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4A
1
0.017
0.020
Ω
Ω
Static drain-source on
resistance
0.020
0.024
RDS(on)
VGS = 4.5V, ID = 4A
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
(1)
gfs
Forward transconductance
Input capacitance
VDS = 15V, ID= 4 A
12.5
800
250
S
Ciss
pF
pF
VDS = 25V, f = 1 MHz,
Coss
Output capacitance
VGS = 0
Reverse transfer
capacitance
Crss
60
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
12.5
3.2
17
nC
nC
nC
VDD = 15V, ID = 8A,
VGS = 5V
(see Figure 14)
4.5
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 5.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max. Unit
VDD=15 V, ID=4A,
RG=4.7Ω, VGS= 4.5V
(see Figure 13)
td(on)
tr
Turn-on delay time
Rise time
18
32
ns
ns
VDD=15 V, ID=4A,
RG=4.7Ω, VGS= 4.5V
(see Figure 13)
21
11
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
4/12
STS8DNF3LL
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Source drain diode
Parameter
Symbol
Test conditions
ISD
Source-drain current
8
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
32
1.2
(2)
VSD
ISD = 8A, VGS = 0
ISD = 8A, VDD = 15V
di/dt = 100A/µs,
Tj = 150°C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
23
17
ns
nC
A
Qrr
IRRM
1.5
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STS8DNF3LL
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characteristics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/12
STS8DNF3LL
Electrical characteristics
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized breakdown voltage vs.
temperature
7/12
Test circuit
STS8DNF3LL
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/12
STS8DNF3LL
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/12
Package mechanical data
STS8DNF3LL
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
10/12
STS8DNF3LL
Revision history
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
11-Sep-2006
15-Nov-2006
30-Jan-2007
8
9
Complete document
The document has been reformatted
10
Typo mistake on Table 1.
11/12
STS8DNF3LL
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