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STS8DNH3LL [STMICROELECTRONICS]

DUAL N-CHANNEL 30V - 0.018 OHM - 8A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET; 双N沟道30V - 0.018欧姆 - 8A SO- 8低栅电荷的STripFET III功率MOSFET
STS8DNH3LL
型号： STS8DNH3LL
厂家： ST    ST
描述：

DUAL N-CHANNEL 30V - 0.018 OHM - 8A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET
双N沟道30V - 0.018欧姆 - 8A SO- 8低栅电荷的STripFET III功率MOSFET

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STS8DNH3LL  
DUAL N-CHANNEL 30V - 0.018 Ω - 8A SO-8  
LOW GATE CHARGE STripFET™ III POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STS8DNH3LL  
30 V  
<0.022 Ω  
8 A  
■
■
■
■
TYPICAL RDS(on) = 0.018Ω  
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V  
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
DESCRIPTION  
This application specific MOSFET is the Third generation  
of STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor shows the  
best trade-off between on-resistance and gate charge.  
When used as high and low side in buck regulators, it  
gives the best performance in terms of both conduction  
and switching losses. This is extremely important for  
motherboards where fast switching and high efficiency  
are of paramount importance.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY CPU CORE DC/DC  
CONVERTERS FOR MOBILE PCS  
Ordering Information  
SALES TYPE  
STS8DNH3LL  
MARKING  
S8DNH3LL  
PACKAGE  
SO-8  
PACKAGING  
TAPE & REEL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
30  
30  
± 16  
8
GS  
V
DGR  
Drain-gate Voltage (R = 20 kΩ)  
V
GS  
V
Gate- source Voltage  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
5
A
D
C
I
(•)  
Drain Current (pulsed)  
32  
2
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
(•) Pulse width limited by safe operating area.  
Rev.0.2  
June 2004  
1/9  
STS8DNH3LL  
TAB.1 THERMAL DATA  
(*)  
Rthj-amb  
Max  
62.5  
150  
-55 to 150  
°C/W  
°C  
°C  
Thermal Resistance Junction-ambient  
T
Maximum Operating Junction Temperature  
Storage Temperature  
j
T
stg  
(*)  
2
When mounted on 1 inch FR-4 board, 2 oz of Cu, t ≤ 10s  
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)  
TAB.2 OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
Drain-source  
D
GS  
V
30  
V
(BR)DSS  
Breakdown Voltage  
Zero Gate Voltage  
V
V
= Max Rating  
DS  
1
10  
µA  
µA  
I
DSS  
GSS  
Drain Current (V = 0)  
= Max Rating T = 125°C  
GS  
DS  
C
Gate-body Leakage  
V
= ± 16 V  
±100  
nA  
GS  
I
Current (V = 0)  
DS  
TAB.3 ON (*)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
DS  
= V  
I
D
= 250 µA  
Gate Threshold Voltage  
1
V
GS(th)  
GS  
V
V
= 10 V  
= 4.5 V  
I
I
= 4 A  
= 4 A  
Static Drain-source On  
Resistance  
0.018  
0.020  
0.022  
0.025  
Ω
Ω
GS  
D
R
DS(on)  
GS  
D
TAB.4 DYNAMIC  
Symbol  
Parameter  
Test Conditions  
=15 V = 4 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
Forward Transconductance  
8.5  
S
DS  
fs  
C
= 25V, f = 1 MHz, V = 0  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
857  
147  
20  
pF  
pF  
pF  
iss  
DS  
C
oss  
C
rss  
2/9  
STS8DNH3LL  
ELECTRICAL CHARACTERISTICS (continued)  
TAB.5 SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 15 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
= 4 A  
t
Turn-on Delay Time  
Rise Time  
12  
14.5  
ns  
ns  
DD  
d(on)  
= 4.7 Ω  
V
= 10 V  
GS  
t
G
r
(Resistive Load, Figure 1)  
Q
V
= 15 V I = 8 A V = 4.5 V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
7.0  
2.5  
2.3  
10  
nC  
nC  
nC  
g
DD  
D
GS  
Q
gs  
Q
(see test circuit, Figure 2)  
gd  
TAB.6 SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15 V  
I
D
= 4 A  
Turn-off Delay Time  
Fall Time  
23  
8
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 10 V  
GS  
t
f
G
(Resistive Load, Figure 1)  
TAB.7 SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
8
32  
A
A
SD  
( )  
I
•
SDM  
(*)  
I
I
= 4 A  
V
= 0  
GS  
V
Forward On Voltage  
1.5  
V
SD  
SD  
t
rr  
= 8 A  
di/dt = 100A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
15  
5.7  
0.76  
ns  
nC  
A
SD  
Q
V
= 15 V  
T = 150°C  
j
rr  
DD  
I
(see test circuit, Figure 3)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedance  
3/9  
STS8DNH3LL  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/9  
STS8DNH3LL  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage Temperature.  
.
.
5/9  
STS8DNH3LL  
Fig. 1: Switching Times Test Circuits For Resistive  
Fig. 2: Gate Charge test Circuit  
Load  
Fig. 3: Test Circuit For Diode Recovery Behaviour  
6/9  
STS8DNH3LL  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
7/9  
STS8DNH3LL  
Revision History  
Date  
Revision  
Description of Changes  
Tuesday 15 June 2004  
0.2  
FIRST ISSUE  
8/9  
STS8DNH3LL  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
All other names are the property of their respective owners.  
© 2004 STMicroelectronics - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
www.st.com  
9/9  

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