STS8NFS30L [STMICROELECTRONICS]
N - CHANNEL 30V - 0.018ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER; N - CHANNEL 30V - 0.018ohm - 8A S0-8的STripFET MOSFET PLUS肖特基整流器
| 型号： | STS8NFS30L |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 30V - 0.018ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
| 文件： | 总8页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS8NFS30L
N - CHANNEL 30V - 0.018Ω - 8A S0-8
STripFET MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
VDSS
RDS(on )
ID
MOSFET
30 V
IF(AV)
3 A
<0.022 Ω
VRRM
8 A
VF(MAX)
0.51 V
SCHOTTKY
30 V
SO-8
DESCRIPTION:
This product associates the latest low voltage
StripFET in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-
DC converters for printers, portable equipment,
and cellular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
30
Unit
Drain-source Voltage (VGS = 0)
V
V
V
A
A
A
W
VDGR
VGS
ID
Drain- gate Voltage (RGS = 20 k
Gate-source Voltage
)
30
Ω
± 20
8
o
Drain Current (continuous) at Tc = 25 C
o
ID
Drain Current (continuous) at Tc = 100 C
5
IDM( )
Drain Current (pulsed)
32
•
o
Ptot
Total Dissipation at Tc = 25 C
2.5
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
VRRM
Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
20
A
IF(AV)
Average Forward Current
TL=125 oC
3
A
δ =0.5
IFSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75
A
A
IRSM
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
tp=100 µs
1
dv/dt
10000
V/ s
µ
(•) Pulse width limited by safe operating area
1/8
December 1999
STS8NFS30L
THERMAL DATA
Rthj-amb (*) Thermal Resistance Junction-ambient MOSFET
Rthj-amb (*) Thermal Resistance Junction-ambientSCHOTTKY
50
100
-65 to 150
150
oC/W
oC/W
oC
Tstg
Tj
Storage Temperature Range
Junction Temperature
Maximum
oC
(*)
mounted on FR-4 board (steady state)
(Tcase = 25 oC unless otherwisespecified)
MOSFET ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
30
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS
=
20 V
100
±
nA
±
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
1.6
2.5
V
RDS(on)
Static Drain-source On VGS = 10V ID = 4 A
0.018 0.022
0.021 0.026
Ω
Ω
Resistance
VGS = 4.5V ID = 4 A
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
8
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =4 A
Min.
Typ.
Max.
Unit
gfs ( )
10
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1050
250
85
pF
pF
pF
2/8
STS8NFS30L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Min.
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
RG = 4.7
ID = 4 A
VGS = 4.5 V
22
60
ns
ns
Ω
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24 V ID = 8 A VGS = 4.5 V
17.5
4
7
23
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 4 A
42
10
ns
ns
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 24 V
RG = 4.7 Ω
ID = 8 A
VGS = 4.5 V
11
12
25
ns
ns
ns
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
•
VSD ( ) Forward On Voltage
ISD = 8 A VGS = 0
2
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 8 A
VDD = 20 V
(see test circuit, figure 5)
di/dt = 100 A/ s
50
40
ns
µ
Tj = 150 oC
Qrr
nC
IRRM
Reverse Recovery
Current
1.6
Α
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
•
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
0.03
0.38
Max.
Unit
o
IR( )
Reversed Leakage
Current
TJ= 25 C
VR=30V
VR=30V
0.2
100
mA
mA
o
TJ= 125 C
o
VF( )
Forward Voltage drop
TJ= 25 C
IF=3A
IF=3A
0.51
0.46
V
V
o
TJ= 125 C
3/8
STS8NFS30L
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STS8NFS30L
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
Normalized Gate ThresholdVoltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
STS8NFS30L
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
STS8NFS30L
SO-8 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
7/8
STS8NFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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