STS9013 [AUK]
NPN Silicon Transistor; NPN硅晶体管型号: | STS9013 |
厂家: | AUK CORP |
描述: | NPN Silicon Transistor |
文件: | 总3页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STS9013
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity.
• Complementary pair with STS9012
Ordering Information
Type NO.
Marking
Package Code
TO-92
STS9013
STS9013
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9016-000
1
STS9013
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
40
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
30
V
5
V
500
mA
mA
mW
°C
Emitter current
IE
-500
625
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
ICBO
Test Condition
Min. Typ. Max. Unit
µA
µA
-
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=35, IE=0
-
-
-
-
0.1
0.1
246
0.25
1
IEBO
VEB=5V, IC=0
*
VCE=1V, IC=50mA
IC=100mA, IB=10mA
IC=100mA, VCE=1V
VCE=6V, IC=20mA
VCB=6V, IE=0, f=1MHz
96
-
-
hFE
Collector-Emitter saturation voltage
Base-Emitter voltage
VCE(sat)
VBE
0.1
0.8
-
V
-
V
Transition frequency
fT
140
-
-
MHz
pF
Collector output capacitance
Cob
7.0
-
* : hFE Rank
/
F : 96~135, G : 118~166, H : 144~202, I : 176~246.
KST-9016-000
2
STS9013
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 1 Pc - Ta
Fig. 3 IC - VCE
Fig. 4 VCE(SAT) - IC
Fig. 5 hFE - IC
KST-9016-000
3
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