STS9012 [KODENSHI]
SMALL SIGNAL TRANSISTOR;
| 型号： | STS9012 |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | SMALL SIGNAL TRANSISTOR |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS9012
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity.
• Complementary pair with STS9013
Ordering Information
Type NO.
Marking
Package Code
TO-92
STS9012
STS9012
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9015-000
1
STS9012
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-40
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
-30
V
-5
V
-500
500
mA
mA
mW
°C
Emitter current
IE
Collector dissipation
Junction temperature
Storage temperature
PC
625
Tj
150
°C
Tstg
-55~150
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
ICBO
Test Condition
Min. Typ. Max. Unit
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=-35V, IE=0
-
-
-0.1
-0.1
246
-0.25
-1.0
-
µA
µA
-
IEBO
VEB=-5V, IC=0
-
-
-
*
hFE
VCE=-1V, IC=-50mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-20mA
VCB=-6V, f=1MHz
96
-
Collector-Emitter saturation voltage
Base-Emitter voltage
VCE(sat)
VBE
-0.1
-0.8
-
V
-
V
Transistor frequency
fT
150
-
MHz
pF
Collector output capacitance
Cob
7
-
*
: hFE rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246.
KST-9015-000
2
STS9012
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 1 PC - Ta
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE
-
IC
Fig. 6 hFE
-
IC
KST-9015-000
3
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