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STS8DPF80 [STMICROELECTRONICS]

2000mA, 80V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8;
STS8DPF80
型号： STS8DPF80
厂家： ST    ST
描述：

2000mA, 80V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8

开关 光电二极管 晶体管
文件： 总9页 (文件大小：228K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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STS2DPF80  
DUAL P-CHANNEL 80V - 0.21 Ω - 2.3A SO-8  
STripFET™ POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STS2DPF80  
80 V  
<0.25 Ω  
2.3 A  
■
TYPICAL RDS(on) = 0.21 Ω  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
■
DESCRIPTION  
This application specific Power MOSFET is the  
second generation of STMicroelectronis unique  
"Single Feature Size™" strip-based process. The  
resulting transistor shows extremely high packing  
density for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
therefore a remarkable manufacturing reproduc-  
ibility.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
DC/DC CONVERTERS  
■
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
■
POWER MANAGEMENT IN CELLULAR  
PHONES AND DISPLAY NEW GENERATION  
Ordering Information  
SALES TYPE  
STS8DPF80  
MARKING  
S8DPF80  
PACKAGE  
SO-8  
PACKAGING  
TAPE & REEL  
ABSOLUTE MAXIMUM RATINGS  
Symb
Parameter  
Value  
80  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
DGR  
Drain-gate Voltage (R = 20 kΩ)  
80  
V
GS  
V
Gate- source Voltage  
± 20  
V
GS  
Drain Current (continuous) at T = 25°C Single Operation  
2.0  
1.3  
A
A
C
I
D
Drain Current (continuous) at T = 100°C Single Operation  
C
I
(•)  
Drain Current (pulsed)  
8
2.5  
A
DM  
P
Total Dissipation at T = 25°C  
W
°C  
°C  
tot  
C
T
Storage Temperature  
-55 to 150  
150  
stg  
T
Max. Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
Rev.0.1  
1/9  
June 2004  
STS2DPF80  
TAB.1 THERMAL DATA  
(*)  
Rthj-  
Thermal Resistance Junction-PCB  
62.5  
°C/W  
PCB  
(*)  
2
When Mounted on 1 inch FR-4 board, 2 oz of Cu and t [ 10 sec.  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
TAB.2 OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
D
= 250 µA, V = 0  
Drain-source  
80  
V
V
GS  
(BR)DSS  
Breakdown Voltage  
Zero Gate Voltage  
V
= Max Rating  
DS  
1
10  
µA  
µA  
I
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 20 V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
TAB.3 ON (*)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
4
Unit  
V
V
V
V
= V  
I
D
= 250 µA  
Gate Threshold Voltage  
2
GS(th)  
DS  
GS  
= 10 V  
I
= 1 A  
Static Drain-source On  
Resistance  
0.21  
0.25  
Ω
R
GS  
D
DS(on)  
TAB.4 DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 10V = 1 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
Forward Transconductance  
4
S
DS  
fs  
C
= 25V, f = 1 MHz, V = 0  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
739  
89.5  
31  
pF  
pF  
pF  
iss  
DS  
C
oss  
C
rss  
2/9  
STS2DPF80  
ELECTRICAL CHARACTERISTICS (continued)  
TAB.5 SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
R
= 40 V  
= 4.7 Ω  
I
= 1 A  
t
Turn-on Delay Time  
Rise Time  
13.5  
18  
ns  
ns  
DD  
D
d(on)  
V
= 10 V  
GS  
t
G
r
(Resistive Load, Figure 1)  
Q
V
= 64V I = 2A V =10V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
20  
2.5  
4.9  
nC  
nC  
nC  
g
DD  
D
GS  
Q
gs  
Q
(See test circuit, Figure 2)  
gd  
TAB.6 SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Max.  
Unit  
V
R
= 40 V  
I
= 1 A  
D
Turn-off Delay Time  
Fall Time  
32  
13  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 10 V  
t
f
G
GS  
(Resistive Load, Figure 1)  
TAB.7 SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
2.3  
9.2  
A
A
SD  
( )  
I
•
SDM  
(*)  
I
I
= 1 A  
V
= 0  
GS  
V
Forward On Voltage  
1.2  
V
SD  
SD  
t
rr  
= 2 A  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
47  
87  
3.7  
ns  
nC  
A
SD  
Q
V
= 40 V  
rr  
DD  
j
I
(See test circuit, Figure 3)  
RRM  
(*)  
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
(•)  
Pulse width limited by safe operating area.  
Thermal Impedance  
Safe Operating Area  
3/9  
STS2DPF80  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/9  
STS2DPF80  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage Temperature.  
.
.
5/9  
STS2DPF80  
Fig. 1: Switching Times Test Circuits For Resistive  
Fig. 2: Gate Charge test Circuit  
Load  
Fig. 3: Test Circuit For Diode Recovery Behaviour  
6/9  
STS2DPF80  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
7/9  
STS2DPF80  
Revision History  
Date  
Revision  
Description of Changes  
Wednesday 16 June 2004  
0.1  
FIRST ISSUE  
8/9  
STS2DPF80  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
All other names are the property of their respective owners.  
© 2004 STMicroelectronics - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
www.st.com  
9/9  

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