STS8DN3LLH5 [STMICROELECTRONICS]
Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET; 双N沟道30 V ， 0.0155 ?? ， 10 A ， SO - 8 STripFETa ？ ¢ V功率MOSFET
| 型号： | STS8DN3LLH5 |
| 厂家： | 
ST |
| 描述： | Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET⢠V Power MOSFET |
| 文件： | 总12页 (文件大小：775K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS8DN3LLH5
Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8
STripFET™ V Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
< 0.019 Ω 10 A (1)
STS8DN3LLH5
30 V
1. The value is rated according Rthj-pcb
■ R
* Q industry benchmark
DS(on)
g
SO-8
■ Extremely low on-resistance R
DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
Figure 1.
Internal schematic diagram
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
Order code
STS8DN3LLH5
Device summary
Marking
Package
SO-8
Packaging
8DN3LL
Tape and reel
January 2010
Doc ID 16967 Rev 1
1/12
www.st.com
12
Contents
STS8DN3LLH5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 16967 Rev 1
STS8DN3LLH5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
30
22
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate-source voltage
V
V
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
10
9
A
(1)
ID
A
(2)
IDM
40
A
(2)
PTOT
Total dissipation at TC = 25 °C
Derating factor
2.7
0.02
W
W/°C
TJ
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. The value is rated according Rthj-pcb
2. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal resistance
Parameter
Thermal resistance junction-ambient
Value
Unit
(1)
Rthj-pcb
47
°C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
Doc ID 16967 Rev 1
3/12
Electrical characteristics
STS8DN3LLH5
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
30
V
VDS = max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS =max rating @125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 22 V
±100
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
1
VGS= 10 V, ID= 5 A
VGS= 4.5 V, ID= 5 A
0.0155 0.019
0.020 0.022
Ω
Ω
Static drain-source on
resistance
RDS(on)
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Ciss
Coss
Crss
724
132
21
pF
pF
pF
Output capacitance
VDS = 25 V, f=1 MHz,
VGS=0
-
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 10 A
VGS= 4.5 V
5.4
2
nC
nC
nC
-
-
Figure 14
2.1
f=1 MHz gate dc bias=0
test signal level = 20 mV
open drain
RG
Intrinsic gate resistance
3.3
Ω
4/12
Doc ID 16967 Rev 1
STS8DN3LLH5
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Switching times
Parameter
Symbol
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
4
ns
ns
ns
ns
VDD=15 V, ID= 5 A,
RG=4.7 Ω, VGS =10 V
Figure 13
4.2
21.1
3.5
-
-
Turn-off delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
Source-drain current
-
-
-
10
40
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
(2)
VSD
ISD = 10 A, VGS=0
1.1
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A,
20.8
10.5
1
ns
nC
A
Qrr
di/dt = 100 A/µs,
VDD= 25 V, Tj=150 °C
-
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 16967 Rev 1
5/12
Electrical characteristics
STS8DN3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM04963v1
I
D
(A)
Tj=150°C
Tc=25°C
100
Single
pulse
10
1
10ms
100ms
1s
0.1
0.01
10
V
DS(V)
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM04954v1
AM04955v1
I
D
(A)
I
D
(A)
V
GS=10V
VDS=4V
100
100
80
60
40
80
60
40
5V
4V
20
0
20
0
3V
DS(V)
1
2
4
V
8
10 VGS(V)
0
2
3
0
4
6
Figure 6.
Normalized B
vs temperature Figure 7.
Static drain-source on resistance
VDSS
AM04956v1
AM04957v1_a
BVDSS
(norm)
R
DS(on)
(Ohm)
ID=1mA
ID=5A
1.10
25
V
GS=10V
20
15
1.05
1.00
0.95
0.90
10
5
4
6
2
8
10
-50
T
J(°C)
ID(A)
0
50
150
0
100
6/12
Doc ID 16967 Rev 1
STS8DN3LLH5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM04958v1
AM04959v1
V
GS
C
(V)
(pF)
T
J
=25°C
V
DD=15V
12
10
8
1000
800
600
400
f=1MHz
I
D=11A
Ciss
6
4
2
0
200
0
Coss
Crss
4
8
0
20
10
Qg(nC)
VDS(V)
0
2
6
10
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM04960v1
AM04961v1
V
GS(th)
R
DS(on)
(norm)
(norm)
ID=250µA
I
V
D
=5.5A
1.2
1.8
GS=10V
1.1
1.0
0.9
0.8
0.7
1.6
1.4
1.2
1.0
0.6
0.8
0.5
0.4
0.6
-50
-50
TJ(°C)
150 T
J(°C)
0
50
0
50
100
100
150
Figure 12. Source-drain diode forward
characteristics
AM04961v1
VSD
(V)
TJ=-50°C
0.9
0.8
0.7
0.6
TJ=25°C
TJ=175°C
0.5
0.4
0
2
4
6
8
10 ISD(A)
Doc ID 16967 Rev 1
7/12
Test circuits
STS8DN3LLH5
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/12
Doc ID 16967 Rev 1
STS8DN3LLH5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 16967 Rev 1
9/12
Package mechanical data
STS8DN3LLH5
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
10/12
Doc ID 16967 Rev 1
STS8DN3LLH5
Revision history
5
Revision history
Table 8.
Date
12-Jan-2010
Document revision history
Revision
Changes
1
First release
Doc ID 16967 Rev 1
11/12
STS8DN3LLH5
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Doc ID 16967 Rev 1
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