STGW50NB60H [STMICROELECTRONICS]
N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT; N沟道50A - 600V TO- 247的PowerMESH IGBT
| 型号： | STGW50NB60H |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT |
| 文件： | 总5页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGW50NB60H
®
N-CHANNEL 50A - 600V TO-247
PowerMESH IGBT
PRELIMINARY DATA
TYPE
STGW50NB60H
VCES
VCE(sat)
< 2.8 V
IC
50 A
600 V
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
■
■
■
■
■
LOW ON-VOLTAGE DROP (VCESAT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
)
3
2
1
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
TO-247
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH FREQUENCY MOTOR CONTROLS
WELDING EQUIPMENTS
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VECR
VGE
IC
Parameter
Value
600
20
Unit
V
Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
V
± 20
100
50
V
o
Collector Current (continuous) at Tc = 25 C
A
o
IC
Collector Current (continuous) at Tc = 100 C
A
I
CM(•)
Collector Current (pulsed)
400
250
A
o
Ptot
Total Dissipation at Tc = 25 C
W
Derating Factor
2
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/5
June 1999
STGW50NB60H
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
Typ
0.5
30
0.1
oC/W
oC/W
oC/W
Rthc-h
Thermal Resistance Case-heatsink
(Tj = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
IC = 250 µA VGE = 0
Min.
Typ.
Max.
Unit
V
VBR(CES) Collector-Emitter
Breakdown Voltage
600
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
VCE = Max Rating
Tj = 25 oC
Tj = 125 oC
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V
VCE = 0
± 100
nA
ON ( )
Symbol
VGE(th)
Parameter
Test Conditions
Min.
3
Typ.
Max.
5
Unit
V
Gate Threshold
Voltage
VCE = VGE IC = 250 µA
VCE(SAT) Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 50 A
VGE = 15 V IC = 50 A Tj = 125 C
2.3
1.9
2.8
V
V
o
DYNAMIC
Symbol
gfs
Parameter
Forward
Test Conditions
IC = 50 A
Min.
Typ.
22
Max.
Unit
S
VCE =25 V
Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE = 25 V f = 1 MHz VGE = 0
4500
450
90
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V IC = 50 A VGE = 15 V
260
28
115
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V
VGE = 15 V
RG=10 Ω
Tj = 150 C
200
A
o
SWITCHING ON
Symbol
Parameter
Test Conditions
VCC = 480 V
GE= 15 V
(di/dt)on Turn-on Current Slope VCC = 480 V
G = 10 Ω
Min.
Typ.
Max.
Unit
td(on)
tr
Delay Time
Rise Time
IC = 50 A
RG = 10Ω
30
90
ns
ns
V
IC = 50 A
VGE = 15 V
350
A/µs
R
o
Eon
Turn-on
Tj = 125 C
600
µJ
Switching Losses
2/5
STGW50NB60H
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
tc
Parameter
Test Conditions
CC = 480 V
GE = 10 Ω
Min.
Typ.
Max.
Unit
Cross-Over Time
Off Voltage Rise Time
Delay Time
V
R
IC = 50 A
VGE = 15 V
166
48
326
90
ns
ns
ns
tr(voff
)
td(off
tf
)
Fall Time
ns
Eoff(**)
Ets
Turn-off Switching Loss
Total Switching Loss
2.1
2.7
mJ
mJ
tc
tr(voff
td(off
tf
Eoff(**)
Ets
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V
RGE = 10 Ω
Tj = 125 C
I
C = 50 A
270
75
340
200
2.9
3.5
ns
ns
ns
ns
mJ
mJ
)
)
VGE = 15 V
o
(•) Pulse width limited by max. junction temperature
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
3/5
STGW50NB60H
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.118
P025P
4/5
STGW50NB60H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
5/5
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