STGW50NB60M
更新时间：2024-09-18 01:59:50
描述：N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT
概述
规格参数
数据手册STGW50NB60M 概述
N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT N沟道50A - 600V - TO- 247 PowerMESH⑩ IGBT IGBT
STGW50NB60M 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 零件包装代码： | TO-247 | 包装说明： | TO-247, 3 PIN |
| 针数： | 3 | Reach Compliance Code： | compliant |
| 风险等级： | 5.84 | Is Samacsys： | N |
| 最大集电极电流 (IC)： | 100 A | 集电极-发射极最大电压： | 600 V |
| 配置： | SINGLE | 门极发射器阈值电压最大值： | 5 V |
| 门极-发射极最大电压： | 20 V | JEDEC-95代码： | TO-247 |
| JESD-30 代码： | R-PSFM-T3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 峰值回流温度（摄氏度）： | 245 | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 250 W | 认证状态： | Not Qualified |
| 子类别： | Insulated Gate BIP Transistors | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | MOTOR CONTROL |
| 晶体管元件材料： | SILICON | 标称断开时间 (toff)： | 1005 ns |
| 标称接通时间 (ton)： | 75 ns | Base Number Matches： | 1 |
STGW50NB60M 数据手册
通过下载STGW50NB60M数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载STGW50NB60M
N-CHANNEL 50A - 600V - TO-247
PowerMESH™ IGBT
TYPE
V
CES
V
I
C
CE(sat)(25°C)
STGW50NB60M
600 V
< 1.9 V
50 A
■
■
■
■
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
LOW GATE CHARGE
)
CESAT
HIGH CURRENT CAPABILITY
3
2
1
TO-247
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
™
MESH IGBTs, with outstanding performances.
INTERNAL SCHEMATIC DIAGRAM
The suffix "M" identifies a family optimized to
achieve very low saturation on voltage for frequency
applications <10 KHz.
APPLICATIONS
■
MOTOR CONTROL
■
WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
Unit
V
Collector-Emitter Voltage (V = 0)
V
V
CES
GS
V
ECR
Reverse Battery Protection
Gate-Emitter Voltage
20
V
±20
V
GE
I
Collector Current (continuous) at T = 25°C
100
A
C
C
I
Collector Current (continuous) at T = 100°C
50
A
C
C
I
( )
Collector Current (pulsed)
400
A
CM
P
Total Dissipation at T = 25°C
250
W
W/°C
°C
°C
TOT
C
Derating Factor
2
T
Storage Temperature
–65 to 150
150
stg
T
Max. Operating Junction Temperature
j
(● ) Pulse width limited by safe operating area
May 2003
1/9
STGW50NB60M
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
0.5
30
°C/W
°C/W
°C/W
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
0.1
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown
Voltage
I
= 250 µA, V = 0
600
V
BR(CES)
C
GE
I
Collector cut-off
(V = 0)
GE
V
V
= Max Rating, T = 25 °C
10
100
µA
µA
CES
CE
C
= Max Rating, T = 125 °C
CE
C
I
Gate-Emitter Leakage
V
= ± 20 V , V = 0
± 100
nA
GES
GE
CE
Current (V = 0)
CE
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
= V , I = 250 µA
Gate Threshold Voltage
3
4
5
V
GE(th)
CE
GE
C
V
Collector-Emitter Saturation
Voltage
V
V
V
V
= 15V, I = 30 A @25°C
V
V
V
V
CE(sat)
GE
GE
GE
GE
C
1.3
1.2
1.5
= 15V, I = 30 A @100°C
C
= 15V, I = 50 A @25°C
1.9
C
1.35
= 15V, I = 50 A @100°C
C
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
V
= 15 V I = 18 A
Forward Transconductance
22
S
fs
CE
, C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
4500
400
70
pF
pF
pF
ies
C
oes
V
= 25 V, f = 1 MHz, V = 0
CE
GE
C
res
Q
V
V
= 480 V, I = 50 A,
= 15 V
nC
nC
nC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
231
28
97
g
CE
GE
C
Q
ge
Q
gc
I
Latching Current
V
R
= 480 V , Tj = 125°C
= 10 Ω
300
A
CL
clamp
G
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 480 V, I = 50 A
Turn-on Delay Time
Rise Time
45
30
ns
ns
d(on)
CC
C
t
r
= 10Ω , V = 15 V
G
GE
Turn-on Current Slope
Turn-on Switching Losses
V
= 480 V, I = 50 A
1600
800
(di/dt)
Eon
A/µs
µJ
CC
C
on
R =10 Ω , V = 15 V
G
GE
Tj = 125°C
2/9
STGW50NB60M
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol
Parameter
Cross-over Time
Test Conditions
Min.
Typ.
450
130
410
300
4
Max.
Unit
ns
t
c
V
= 480 V, I = 50 A
cc
C
t (V
)
off
R
= 10 Ω , V = 15 V
Off Voltage Rise Time
Delay Time
ns
r
GE
GE
t (
d off
)
ns
t
f
Fall Time
ns
E
off
(**)
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
mJ
mJ
ns
E
ts
4.1
t
V
cc
= 480 V, I = 50 A
730
265
565
440
6.6
c
C
t (V
)
off
R
= 10 Ω , V = 15 V
ns
r
GE
GE
t (
d off
)
Tj = 125 °C
ns
t
f
Fall Time
ns
E
off
(**)
Turn-off Switching Loss
Total Switching Loss
mJ
mJ
E
ts
7.1
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
3/9
STGW50NB60M
Thermal Impedance
Switching Off Safe Operating Area
Transfer Characteristics
Output Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
4/9
STGW50NB60M
Collector-Emitter On Voltage vs Temperature
Gate-Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Break-down Voltage vs Temp.
Total Switching losses vs Gate Resistance
Total Switching losses vs Temperature
5/9
STGW50NB60M
Total Switching losses vs Ic
Collector-Emitter on Voltage vs Current
6/9
STGW50NB60M
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/9
STGW50NB60M
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
0.40
1
TYP
MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
MAX.
0.20
0.10
0.03
0.05
A
D
0.08
E
0.015
0.04
F
F1
F2
F3
F4
G
3
2
0.11
0.07
2
3
2.40
3.40
0.07
0.11
0.09
0.13
10.90
0.43
H
15.45
19.85
3.70
15.75
20.15
4.30
0.60
0.78
0.14
0.62
0.79
0.17
L
L1
L2
L3
L4
L5
M
18.50
0.72
14.20
2
14.80
3
0.56
0.07
0.14
0.58
0.11
34.60
5.50
1.36
0.21
5º
5º
V
60º
60º
V2
Dia
3.55
3.65
0.143
8/9
STGW50NB60M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
9/9
STGW50NB60M 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| STGW60H65DFB | STMICROELECTRONICS | 650 V、60 A高速沟槽栅场截止HB系列IGBT | 获取价格 |
|
| STGW60H65DFB-4 | STMICROELECTRONICS | 650 V、60 A高速沟槽栅场截止HB系列IGBT | 获取价格 |
|
| STGW60H65FB | STMICROELECTRONICS | 650 V、60 A高速沟槽栅场截止HB系列IGBT | 获取价格 |
|
| STGW60V60DF | STMICROELECTRONICS | 600 V、60 A超高速沟槽栅场截止V系列IGBT | 获取价格 |
|
| STGW60V60F | STMICROELECTRONICS | 600 V、60 A超高速沟槽栅场截止V系列IGBT | 获取价格 |
|
| STGW75H65DFB2-4 | STMICROELECTRONICS | Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package | 获取价格 |
|
| STGW75M65DF2 | STMICROELECTRONICS | 沟槽栅场截止IGBT，M系列，650 V、75 A，低损耗 | 获取价格 |
|
| STGW80H65DFB | STMICROELECTRONICS | 650 V、80 A高速沟槽栅场截止HB系列IGBT | 获取价格 |
|
| STGW80H65DFB-4 | STMICROELECTRONICS | 650 V、80 A高速沟槽栅场截止HB系列IGBT | 获取价格 |
|
| STGW80V60DF | STMICROELECTRONICS | 600 V、80 A超高速沟槽栅场截止V系列IGBT | 获取价格 |
|
STGW50NB60M 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 5
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 8
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
