STGY50NB60HD [STMICROELECTRONICS]
N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT; N沟道50A - 600V MAX247的PowerMESH IGBT
| 型号： | STGY50NB60HD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT |
| 文件： | 总6页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGY50NB60HD
N-CHANNEL 50A - 600V MAX247
PowerMESH IGBT
PRELIMINARY DATA
TYPE
VCES
VCE(sat)
< 2.8 V
IC
STGY50NB60HD
600 V
50 A
■
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
■
■
■
■
■
■
LOW ON-VOLTAGEDROP (VCESAT)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
3
2
1
MAX247
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH FREQUENCY MOTOR CONTROLS
WELDING EQUIPMENTS
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VGE
IC
Parameter
Value
600
Unit
Collector-Emitter Voltage (VGS = 0)
Gate-Emitter Voltage
V
V
± 20
100
o
Collector Current (continuous) at Tc = 25 C
A
o
IC
Collector Current (continuous) at Tc = 100 C
50
A
I
CM(• )
Collector Current (pulsed)
400
A
o
Ptot
Total Dissipation at Tc = 25 C
250
W
Derating Factor
2
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/6
June 1999
STGY50NB60HD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
Typ
0.5
30
0.1
oC/W
oC/W
oC/W
Rthc-h
Thermal Resistance Case-heatsink
(Tj = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
IC = 250 µA VGE = 0
Min.
Typ.
Max.
Unit
V
VBR(CES) Collector-Emitter
Breakdown Voltage
600
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
VCE = Max Rating
Tj = 25 oC
Tj = 125 oC
100
1000
µA
A
µ
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V
VCE = 0
± 100
nA
ON (
)
Symbol
VGE(th)
Parameter
Test Conditions
Min.
3
Typ.
Max.
5
Unit
V
Gate Threshold
Voltage
VCE = VGE IC = 250 µA
VCE(SAT) Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 50 A
VGE = 15 V IC = 50 A Tj = 125 C
2.3
1.9
2.8
V
V
o
DYNAMIC
Symbol
gfs
Parameter
Forward
Test Conditions
IC = 50 A
Min.
Typ.
22
Max.
Unit
S
VCE =25 V
Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V f = 1 MHz VGE = 0
4500
450
90
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V IC = 50 A VGE = 15 V
260
28
15
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V
Tj = 150 oC
RG=10 Ω
200
A
SWITCHING ON
Symbol
Parameter
Delay Time
Rise Time
(di/dt)on Turn-on Current Slope
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VCC = 480 V
VGE= 15 V
IC = 50 A
RG = 10Ω
20
70
ns
ns
V
CC = 480 V
IC = 50 A
350
A/ s
µ
RG = 10 Ω
VGE = 15 V
Eon(❍)
Turn-on
Tj = 125 oC
950
J
µ
Switching Losses
2/6
STGY50NB60HD
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING OFF
Symbol
tc
Parameter
Test Conditions
CC = 480 V
GE = 10
Min.
Typ.
Max.
Unit
Cross-Over Time
Off Voltage Rise Time
Delay Time
V
R
IC = 50 A
VGE = 15 V
166
48
326
90
ns
ns
ns
tr(voff
)
Ω
td(off
tf
)
Fall Time
ns
Eoff(**)
Ets(❍)
Turn-off Switching Loss
Total Switching Loss
2.1
3
mJ
mJ
tc
tr(voff
td(off
tf
Eoff(**)
Ets(❍)
Cross-Over Time
Off Voltage Rise Time RGE = 10
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
CC = 480 V
IC = 50 A
VGE = 15 V
270
75
340
200
2.9
ns
ns
ns
ns
mJ
mJ
)
)
Ω
Tj = 125 oC
3.85
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Forward Current
Test Conditions
Min.
Typ. Max. Unit
If
Ifm
50
A
A
Forward Current pulsed
400
Vf
Forward On-Voltage
If = 50 A
If = 50 A
V
V
o
Tj = 125 C
2
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 50 A
dI/dt = 100 A/µS
VR= 200 V
Tj = 125 C
200
nS
nC
A
o
( ) Pulse width limited by max. junction temperature
•
(❍) Include recovery losses on the STTA2006 freewheeling diode
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(**)Losses Include Also The Tail (Jedec Standardization)
3/6
STGY50NB60HD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
4/6
STGY50NB60HD
Max247 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
TYP.
MAX.
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
MIN.
TYP.
MAX.
A
A1
b
b1
b2
c
D
e
E
L
L1
P025Q
5/6
STGY50NB60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
6/6
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