STGY50NC60WD [STMICROELECTRONICS]
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT; N沟道600V - 50A - MAX247非常快的PowerMESH IGBT
| 型号： | STGY50NC60WD |
| 厂家： | 
ST |
| 描述： | N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT |
| 文件： | 总11页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGY50NC60WD
N-channel 600V - 50A - Max247
Very fast PowerMESH™ IGBT
PRELIMINARY DATA
General features
VCE(sat)
(max)@25°C @100°C
IC
VCES
Type
STGY50NC60WD 600V
< 2.5V 50A
■ High frequency operation
3
2
1
■ Low C
/ C
ratio (no cross-conduction
IES
RES
susceptbility)
Max247
■ Very soft ultra fast recovery antiparallel diode
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
Internal schematic diagram
performances. The suffix “W” identifies a family
optimized for very high frequency application.
Applications
■ High frequency inverters
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers, UPS
Order codes
Part number
Marking
Package
Packaging
STGY50NC60WD
GY50NC60WD
Max247
Tube
October 2006
Rev 1
1/11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
11
Contents
STGY50NC60WD
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STGY50NC60WD
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
600
80
Unit
V
VCES
Collector-emitter voltage (VGS = 0)
(1)
Collector current (continuous) at TC = 25°C
Collector current (continuous) at TC = 100°C
A
IC
(1)
50
A
IC
(2)
Collector current (pulsed)
190
30
A
A
ICM
IF
VGE
PTOT
Tstg
Tj
Diode RMS forward current at TC = 25°C
Gate-emitter voltage
20
V
Total dissipation at TC = 25°C
260
W
Storage temperature
– 55 to 150
°C
Operating junction temperature
1. Calculated according to the iterative formula:
T
– T
JMAX
C
I
(T ) = ------------------------------------------------------------------------------------------------------
C
C
R
× V
(T , I )
C C
THJ – C
CESAT(MAX)
2. Pulse width limited by max junction temperature
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max IGBT
0.48
1.5
50
°C/W
°C/W
°C/W
Rthj-case Thermal resistance junction-case max diode
Rthj-amb Thermal resistance junction-ambient max
(1)
Maximum lead temperature for soldeing purpose
300
°C
TL
1. 1.6mm from case, for 10sec
3/11
Electrical characteristics
STGY50NC60WD
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
Static
Parameter
Test conditions
IC= 1mA, VGE= 0
VGE= 15V, IC= 40A
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
VBR(CES)
600
V
1.9
1.7
2.5
V
V
Collector-emitter saturation
voltage
VCE(sat)
VGE(th)
ICES
VGE= 15V, IC=40A,Tc=125°C
VCE= VGE, IC= 250µA
Gate threshold voltage
3.75
5.75
V
VGE= Max rating,TC= 25°C
VGE= Max rating,TC= 125°C
Collector cut-off current
(VGE = 0)
250
1
µA
mA
Gate-emitter leakage
current (VCE = 0)
IGES
gfs
VGE= 20V , VCE= 0
100
nA
S
VCE = 15V I = 20A
Forward transconductance
20
, C
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
4700
410
90
pF
pF
pF
VCE = 25V, f = 1MHz,
VGE = 0
Output capacitance
Reverse transfer
capacitance
Qg
Qge
Qgc
V
CE = 390V, IC = 40A,
Total gate charge
155
32.4
82.2
nC
nC
nC
Gate-emitter charge
Gate-collector charge
VGE = 15V,
Figure 2
4/11
STGY50NC60WD
Electrical characteristics
Min. Typ. Max. Unit
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
VCC = 390V, IC = 40A
RG= 10Ω, VGE= 15V,
Figure 3
Turn-on delay time
Current rise time
52
17
ns
ns
Turn-on current slope
2400
A/µs
(di/dt)on
VCC = 390V, IC = 40A
td(on)
tr
Turn-on delay time
Current rise time
50
19
ns
ns
RG= 10Ω, VGE= 15V,
Tj = 125°C
Turn-on current slope
2000
A/µs
(di/dt)on
Figure 3
tr(Voff)
td(Voff)
tf
VCC = 390V, IC = 40A
RG= 10Ω, VGE= 15V,
Figure 3
Off voltage rise time
Turn-off delay time
Current fall time
31
240
35
ns
ns
ns
VCC = 390V, IC = 40A
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
60
280
63
ns
ns
ns
RG= 10Ω, VGE= 15V,
Tj = 125°C
Figure 3
Table 6.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
Eon
VCC = 390V, IC = 40A
RG= 10Ω, VGE= 15V,
Figure 1
Turn-on switching losses
Turn-off switching losses
Total switching losses
365
560
470
790
µJ
µJ
µJ
(2)
Eoff
925 1260
Ets
VCC = 390V, IC = 40A
(1)
Eon
Turn-on switching losses
Turn-off switching losses
Total switching losses
635
910
µJ
µJ
µJ
RG= 10Ω, VGE= 15V,
(2)
Eoff
Tj = 125°C
1545
Ets
Figure 1
1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 4 If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/11
Electrical characteristics
STGY50NC60WD
Table 7.
Symbol
Collector-emitter diode
Parameter
Test conditions
If = 20A
Min. Typ. Max. Unit
1.5
1
2.2
V
V
Vf
Forward on-voltage
If = 20A, Tj = 125°C
trr
If = 20A ,VR = 40V,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
44
66
3
ns
nC
A
Qrr
Irrm
Tj = 25°C, di/dt = 100 A/µs
Figure 4
trr
If = 12A ,VR = 40V,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
88
237
5.4
ns
nC
A
Qrr
Irrm
Tj =125°C, di/dt = 100A/µs
Figure 4
6/11
STGY50NC60WD
Test circuit
3
Test circuit
Figure 1. Test circuit for inductive load
switching
Figure 2.
Gate charge test circuit
Figure 3. Switching waveform
Figure 4. Diode recovery time waveform
7/11
Package mechanical data
STGY50NC60WD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STGY50NC60WD
Package mechanical data
Max247 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
TYP.
MAX.
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
MIN.
TYP.
MAX.
A
A1
b
b1
b2
c
D
e
E
L
L1
P025Q
9/11
Revision history
STGY50NC60WD
5
Revision history
Table 8.
Date
09-Oct-2006
Revision history
Revision
Changes
1
Initial release.
10/11
STGY50NC60WD
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11/11
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